Gyeonggi-do
South Korea
23
2015-04-02
The entities that hold a legal rights for patent applications filed by inventor Lee Chang-Won:
Chang-Won Lee from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Vertical memory devices and methods of manufacturing the same
#2 | 2014-04-10PRIVATE ELECTRIC GENERATOR
#3 | 2014-03-13Vertical memory devices and methods of manufacturing the same
#4 | 2009-12-31Methods of forming integrated circuit devices having stacked gate electrodes
#5 | 2009-12-03Methods of forming recessed gate electrodes having covered layer interfaces
#6 | 2009-10-15Semiconductor device including an ohmic layer
#7 | 2009-07-09Semiconductor devices including gate structures and leakage barrier oxides
#8 | 2006-12-28Methods of Forming Integrated Circuit Devices Including Memory Cell Gates and High Voltage Transistor Gates Using Plasma Re-Oxidation
#9 | 2006-08-24Methods of forming semiconductor devices having metal gate electrodes and related devices
#10 | 2006-08-17Method of forming a semiconductor device including an ohmic layer
#11 | 2006-07-27Methods of forming a semiconductor device having a metal gate electrode and associated devices
#12 | 2006-06-01Methods of manufacturing a semiconductor device
#13 | 2006-05-25Method of forming a gate of a semiconductor device
#14 | 2006-04-20Methods of forming gate structures for semiconductor devices
#15 | 2006-04-13Gate structures with silicide sidewall barriers and methods of manufacturing the same
#16 | 2006-03-30Methods of fabricating semiconductor devices
#17 | 2006-03-16Semiconductor devices including high-k dielectric materials
#18 | 2006-03-09Methods of manufacturing semiconductor device gate structures by performing a surface treatment on a gate oxide layer
#19 | 2006-01-19Semiconductor device and method of manufacturing the same
#20 | 2005-12-22Methods of forming gate patterns using isotropic etching of gate insulating layers
#21 | 2005-12-08Recessed gate electrodes having covered layer interfaces and methods of forming the same
#22 | 2005-12-01Methods of manufacturing semiconductor devices with gate structures having an oxide layer on the sidewalls thereof and related processing apparatus
#23 | 2005-01-27Methods of forming a semiconductor device having a metal gate electrode and associated devices
683031 ⎘