Michael P. Ganz

City:

Fishkill, New York

Country:

United States

Published Applications:

Last publication date:

2015-02-26

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Michael P. Ganz from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

Blanket EPI super steep retrograde well formation without Si recess

METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR

InventorID:

683087 ⎘