Inventor profile of:

Ralf van Bentum

City:

Moritzburg

Country:

Germany

Published Applications:

15

Last publication date:

2023-06-29

Top Assignees for applications by Ralf van Bentum

The entities that hold a legal rights for patent applications filed by inventor Bentum Ralf van:

Recent patent applications by Bentum Ralf van

Ralf van Bentum from Moritzburg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-06-29
US20230209795A1
Electricity

SRAM BIT CELLS

#2 | 2016-08-25
US20160247811A1
Electricity

SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY CELL AND A HIGH VOLTAGE TRANSISTOR, AND METHOD FOR THE FORMATION THEREOF

#3 | 2016-06-09
US20160163821A1
Electricity

Semiconductor structure including a ferroelectric transistor and method for the formation thereof

#4 | 2016-03-03
US20160064228A1
Electricity

Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor

#5 | 2016-02-04
US20160035856A1
Electricity

Semiconductor structure including a ferroelectric transistor and method for the formation thereof

#6 | 2015-03-19
US20150078068A1
Physics

Integrated circuits with SRAM cells having additional read stacks

#7 | 2015-03-05
US20150060983A1
Electricity

Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof

#8 | 2014-03-20
US20140078817A1
Physics

Integrated circuits with SRAM cells having additional read stacks and methods for their fabrication

#9 | 2012-12-27
US20120329220A1
Electricity

Method of improving memory cell device by ion implantation

#10 | 2009-10-01
US20090242996A1
Electricity

SOI TRANSISTOR WITH FLOATING BODY FOR INFORMATION STORAGE HAVING ASYMMETRIC DRAIN/SOURCE REGIONS

#11 | 2009-07-02
US20090166738A1
Electricity

RAM CELL INCLUDING A TRANSISTOR WITH FLOATING BODY FOR INFORMATION STORAGE HAVING ASYMMETRIC DRAIN/SOURCE EXTENSIONS

#12 | 2008-01-03
US20080001191A1
Electricity

Drain/source extension structure of a field effect transistor with reduced boron diffusion

#13 | 2008-01-03
US20080001178A1
Electricity

Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrode

#14 | 2007-11-01
US20070254437A1
Electricity

Method for reducing silicide defects by removing contaminants prior to drain/source activation

#15 | 2007-07-05
US20070155122A1
Electricity

Trench isolation structure having different stress

InventorID:

693345 ⎘