Robert Gauthier

INTEGRATED TRANSISTOR AND SILICON CONTROLLED RECTIFIER WITH NANOSHEET GATES

ELECTROSTATIC DISCHARGE DEVICE WITH BACKSIDE LATCH-UP IMMUNITY

BIPOLAR JUNCTION TRANSISTOR WITH DIRECT BACKSIDE CONTACT

ELECTROSTATIC DISCHARGE DEVICE DIODE-TRIGGERED SILICON CONTROLLED RECTIFIER UTILIZING BACKSIDE WIRING

ELECTROSTATIC DISCHARGE DEVICE THYRISTORS WITH NANOSHEET GATES

ANTIFUSE THYRISTOR BIT CELL

CONTROLLABLE TRIGGERED ELECTROSTATIC DISCHARGE DEVICE WITH NANOSHEET GATES

SEMICONDUCTOR DEVICE WITH BACKSIDE ISOLATION RING FOR LATCH-UP IMMUNITY

VERTICAL ELECTROSTATIC DISCHARGE DEVICE WITH NANOSHEET GATES

LATERAL ELECTROSTATIC DISCHARGE DEVICE WITH NANOSHEET GATES

Electrostatic Discharge Protection Using Ovonic Threshold Switching

VERTICAL DIODE UTILIZING BACKSIDE POWER DELIVERY NETWORK

LATCH-UP PREVENTION AND INCREASED DECOUPLING CAPACITOR DENSITY

SEMICONDUCTOR DEVICES WITH EXTENDED BALLAST

BACKSIDE TRENCH ISOLATION FOR HIGH VOLTAGE DEVICE INTEGRATION

BACKSIDE DEEP TRENCH CAPACITOR

BACKSIDE SUBSTRATE DIELECTRIC BREAK

VERTICAL SILICON CONTROLLED RECTIFIERS

BJT WITH BACKSIDE BASE CONTACT

INTEGRATED PASSIVE DEVICE REGION WITH INCREASED SUBSTRATE THICKNESS

PASSIVE DEVICE INTEGRATED INTO BACKSIDE POWER DELIVERY NETWORK

BACKSIDE BALLAST RESISTOR

BACKSIDE CONTACTS TO CONTROL THE VOLTAGE OF THE SUBSTRATE

DIODE FORMATION WITH BACKSIDE POWER DELIVERY NETWORK

SUBSTRATE-LESS PASSIVE DEVICE SOLUTION FOR BACKSIDE POWER DISTRIBUTION NETWORK

INTEGRATION OF BIPOLAR DEVICE AND BACKSIDE POWER DELIVERY NETWORK

INTEGRATION OF A VERTICAL DIODE AND A TRANSISTOR