Westminster, California
United States
24
2014-05-15
The entities that hold a legal rights for patent applications filed by inventor Bui Peter Steven:
Peter Steven Bui from Westminster, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Edge illuminated photodiodes
#2 | 2014-04-03Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
#3 | 2012-05-03Low crosstalk, front-side illuminated, back-side contact photodiode array
#4 | 2012-04-12Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
#5 | 2011-11-17High density photodiodes
#6 | 2011-07-14THIN WAFER DETECTORS WITH IMPROVED RADIATION DAMAGE AND CROSSTALK CHARACTERISTICS
#7 | 2010-11-18Edge illuminated photodiodes
#8 | 2010-07-29High density photodiodes
#9 | 2010-06-24Front side illuminated, back-side contact double-sided PN-junction photodiode arrays
#10 | 2010-04-08Front Illuminated Back Side Contact Thin Wafer Detectors
#11 | 2010-02-11Deep diffused thin photodiodes
#12 | 2009-06-04Photodiode with controlled current leakage
#13 | 2008-06-05Thin wafer detectors with improved radiation damage and crosstalk characteristics
#14 | 2008-05-01Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
#15 | 2008-03-20High density photodiodes
#16 | 2007-12-27Edge illuminated photodiodes
#17 | 2007-12-06Low crosstalk, front-side illuminated, back-side contact photodiode array
#18 | 2007-11-08Photodiode with controlled current leakage
#19 | 2007-10-09Edge illuminated photodiodes
#20 | 2007-07-10Thin wafer detectors with improved radiation damage and crosstalk characteristics
#21 | 2007-04-26Deep diffused thin photodiodes
#22 | 2006-11-16Front illuminated back side contact thin wafer detectors
#23 | 2006-10-05Photodiode with controlled current leakage
#24 | 2006-06-06Front illuminated back side contact thin wafer detectors
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