Thomas Harrington

CIRCUITRY FOR ALLOWING MULTIPLE SENSORS ON A SEMICONDUCTOR DIE TO SHARE A COMMON SENSOR PAD

POWER SEMICONDUCTOR DEVICES WITH BOND PADS HAVING STRUCTURAL SUPPORT LAYERS

NON-CONTINUOUS PAD STRUCTURE FOR POWER SEMICONDUCTOR DEVICES AND POWER SEMICONDUCTOR DEVICES INCLUDING NON-CONTINUOUS PAD STRUCTURES

GATE-CONTROLLED SEMICONDUCTOR DEVICES HAVING TEMPERATURE COMPENSATED GATE RESISTANCES

TRENCH BASED SEMICONDUCTOR DEVICES WITH INCREASED PLANARITY

POWER DEVICES WITH BARRIER METAL EXTENSION AND SEALING

POWER DEVICES WITH MULTIPLE METAL LAYER THICKNESSES

SIC VJFET WITH EDGE TERMINATION FOR DUAL TILTED GATE IMPLANTS