Inventor profile of:

Xiaomeng CHEN

City:

Hsinchu

Country:

Taiwan

Published Applications:

42

Last publication date:

2026-05-14

Top Assignees for applications by Xiaomeng CHEN

The entities that hold a legal rights for patent applications filed by inventor CHEN Xiaomeng:

Recent patent applications by CHEN Xiaomeng

Xiaomeng CHEN from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-14
US20260136893A1
Electricity

DEFECT REPAIRING APPARATUSES AND METHODS OF REPAIRING DEFECTS

#2 | 2026-04-30
US20260120989A1
Electricity

APPARATUS AND METHOD FOR IMPROVED ELECTRON BEAM INSPECTION WITH A CHARGE TREATMENT ELECTRON SOURCE

#3 | 2026-04-09
US20260098825A1
Physics

INSPECTION APPARATUS AND INSPECTION METHOD

#4 | 2026-03-05
US20260063576A1
Physics

APPARATUS AND METHOD FOR IMPROVED ELECTRON BEAM INSPECTION WITH PROGRAMMABLE ANGLE AND ENERGY DETECTION

#5 | 2026-02-12
US20260045438A1
Electricity

APPARATUS AND METHOD FOR IMPROVED ELECTRON MULTI-BEAM INSPECTION

#6 | 2024-10-31
US20240363451A1
Electricity

SIMULTANEOUS MULTI-BANDWIDTH OPTICAL INSPECTION OF SEMICONDUCTOR DEVICES

#7 | 2024-08-08
US20240266232A1
Electricity

SEMICONDUCTOR STRUCTURE INSPECTION USING A HIGH ATOMIC NUMBER MATERIAL

#8 | 2024-05-30
US20240178263A1
Electricity

DUAL FACING BSI IMAGE SENSORS WITH WAFER LEVEL STACKING

#9 | 2023-12-21
US20230411223A1
Electricity

Simultaneous multi-bandwidth optical inspection of semiconductor devices

#10 | 2022-09-22
US20220301944A1
Electricity

Semiconductor structure inspection using a high atomic number material

#11 | 2021-09-30
US20210305292A1
Electricity

Dual facing BSI image sensors with wafer level stacking

#12 | 2020-02-13
US20200052014A1
Electricity

Dual facing BSI image sensors with wafer level stacking

#13 | 2018-08-09
US20180226337A1
Electricity

Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same

#14 | 2017-11-02
US20170317118A1
Electricity

Dual facing BSI image sensors with wafer level stacking

#15 | 2016-04-21
US20160111520A1
Electricity

Method of manufacturing a semiconductor device including a barrier structure

#16 | 2015-12-10
US20150357296A1
Electricity

Hybrid bonding mechanisms for semiconductor wafers

#17 | 2015-10-08
US20150287806A1
Electricity

Method of manufacturing a semiconductor device

#18 | 2015-10-08
US20150287737A1
Electricity

Silicon dot formation by self-assembly method and selective silicon growth for flash memory

#19 | 2015-07-02
US20150187777A1
Electricity

Semiconductor arrangement with capacitor and method of fabricating the same

#20 | 2015-05-28
US20150145101A1
Electricity

Semiconductor arrangement with capacitor

#21 | 2015-05-28
US20150145100A1
Electricity

Semiconductor arrangment with capacitor

#22 | 2015-04-30
US20150115409A1
Electricity

Semiconductor arrangement having capacitor separated from active region

#23 | 2015-04-09
US20150097218A1
Electricity

Semiconductor device with non-linear surface

#24 | 2015-04-09
US20150097216A1
Electricity

Semiconductor device with non-linear surface

#25 | 2015-04-02
US20150091124A1
Electricity

Dual facing BSI image sensors with wafer level stacking

#26 | 2015-03-12
US20150069541A1
Electricity

Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

#27 | 2015-03-05
US20150060873A1
Electricity

Crystalline layer for passivation of III-N surface

#28 | 2015-03-05
US20150060861A1
Electricity

Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric

#29 | 2015-02-26
US20150054059A1
Electricity

Silicon dot formation by direct self-assembly method for flash memory

#30 | 2015-02-26
US20150054055A1
Electricity

Silicon dot formation by self-assembly method and selective silicon growth for flash memory

#31 | 2015-02-26
US20150053992A1
Electricity

Semiconductor device

#32 | 2015-02-26
US20150053991A1
Electricity

Transistor having an ohmic contact by gradient layer and method of making the same

#33 | 2015-02-26
US20150053990A1
Electricity

Transistor having an ohmic contact by screen layer and method of making the same

#34 | 2015-02-12
US20150041825A1
Electricity

Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing

#35 | 2015-02-12
US20150041761A1
Electricity

Backside illuminated photo-sensitive device with gradated buffer layer

#36 | 2015-01-22
US20150021666A1
Electricity

TRANSISTOR HAVING PARTIALLY OR WHOLLY REPLACED SUBSTRATE AND METHOD OF MAKING THE SAME

#37 | 2015-01-22
US20150021661A1
Electricity

Transistor having high breakdown voltage and method of making the same

#38 | 2015-01-22
US20150021660A1
Electricity

Transistor having a back-barrier layer and method of making the same

#39 | 2014-12-02
US13944494
Electricity

Transistor having doped substrate and method of making the same

#40 | 2014-08-26
US13934296
Electricity

Plasmonic nanostructures for organic image sensors

#41 | 2014-05-01
US20140117546A1
Electricity

Hybrid bonding mechanisms for semiconductor wafers

#42 | 2014-04-03
US20140091438A1
Electricity

Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same

InventorID:

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