Apache Junction, Arizona
United States
53
2021-01-07
The entities that hold a legal rights for patent applications filed by inventor Lebby Michael:
Michael Lebby from Apache Junction, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor
#2 | 2020-05-21III-N to rare earth transition in a semiconductor structure
#3 | 2016-05-12Strain compensated REO buffer for III-N on silicon
#4 | 2015-01-15III-N material grown on REN epitaxial buffer on Si substrate
#5 | 2014-12-04HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS
#6 | 2014-08-28REO gate dielectric for III-N device on Si substrate
#7 | 2014-08-21AlN cap grown on GaN/REO/silicon substrate structure
#8 | 2014-08-21III-N material grown on AIO/AIN buffer on Si substrate
#9 | 2014-08-14REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
#10 | 2014-06-19REO/ALO/A1N template for III-N material growth on silicon
#11 | 2014-06-10Re-silicide gate electrode for III-N device on Si substrate
#12 | 2014-03-25A1N inter-layers in III-N material grown on DBR/silicon substrate
#13 | 2014-03-20DELTA DOPING AT Si-Ge INTERFACE
#14 | 2014-03-20Si-Ge-Sn ON REO TEMPLATE
#15 | 2014-03-20IV MATERIAL PHOTONIC DEVICE ON DBR
#16 | 2014-03-20III-V semiconductor interface with graded GeSn on silicon
#17 | 2014-02-27GRADED GeSn ON SILICON
#18 | 2014-01-09Oxygen engineered single-crystal REO template
#19 | 2014-01-07Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices
#20 | 2013-12-19SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx
#21 | 2013-09-26Nucleation of III-N on REO templates
#22 | 2013-08-22III-N ON SILICON USING NANO STRUCTURED INTERFACE LAYER
#23 | 2013-08-06Modification of REO by subsequent III-N EPI process
#24 | 2013-06-20REO-Si TEMPLATE WITH INTEGRATED REO LAYERS FOR LIGHT EMISSION
#25 | 2013-04-25STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
#26 | 2013-03-21Integrated rare earth devices
#27 | 2013-03-14LATTICE MATCHED CRYSTALLINE REFLECTOR
#28 | 2013-03-14III-N FET ON SILICON USING FIELD SUPPRESSING REO
#29 | 2013-02-07Rare earth oxy-nitride buffered III-N on silicon
#30 | 2012-11-08Single Crystal Ge On Si
#31 | 2012-07-19HEXAGONAL REO TEMPLATE BUFFER FOR III-N LAYERS ON SILICON
#32 | 2012-06-14Laser cooling of modified SOI wafer
#33 | 2012-06-14SOLAR CELLS WITH MAGNETICALLY ENHANCED UP-CONVERSION
#34 | 2012-05-03IIIOxNy ON REO/Si
#35 | 2012-05-03IIIONon single crystal SOI substrate and III n growth platform
#36 | 2012-01-26Integrated pump laser and rare earth waveguide amplifier
#37 | 2011-12-01Solar cells with engineered spectral conversion
#38 | 2011-09-15ACTIVE SOLAR CONCENTRATOR WITH MULTI-JUNCTION DEVICES
#39 | 2011-08-25High efficiency solar cell using IIIB material transition layers
#40 | 2011-08-04Integrated rare earth devices
#41 | 2011-05-12MULTILAYERED BOX IN FDSOI MOSFETS
#42 | 2010-05-06Full color display
#43 | 2010-04-08Spontaneous/stimulated light emitting μ-cavity device
#44 | 2010-01-05Spontaneous/stimulated light emitting μ-cavity device
#45 | 2009-11-26Stacked transistors and process
#46 | 2009-10-20Full color display including LEDs with rare earth active areas and different radiative transistions
#47 | 2008-06-17Selective colored light emitting diode
#48 | 2008-06-12Multilayered BOX in FDSOI MOSFETS
#49 | 2008-04-24Signal and/or ground planes with double buried insulator layers and fabrication process
#50 | 2008-04-08IC on non-semiconductor substrate
#51 | 2007-01-25Strain inducing multi-layer cap
#52 | 2007-01-25Stacked transistors and process
#53 | 2006-11-02Signal and/or ground planes with double buried insulator layers and fabrication process
74769 ⎘