Inventor profile of:

Michael Lebby

City:

Apache Junction, Arizona

Country:

United States

Published Applications:

53

Last publication date:

2021-01-07

Top Assignees for applications by Michael Lebby

The entities that hold a legal rights for patent applications filed by inventor Lebby Michael:

Recent patent applications by Lebby Michael

Michael Lebby from Apache Junction, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-01-07
US20210005720A1
Electricity

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

#2 | 2020-05-21
US20200161417A1
Electricity

III-N to rare earth transition in a semiconductor structure

#3 | 2016-05-12
US20160133708A1
Electricity

Strain compensated REO buffer for III-N on silicon

#4 | 2015-01-15
US20150014676A1
Electricity

III-N material grown on REN epitaxial buffer on Si substrate

#5 | 2014-12-04
US20140357014A1
Electricity

HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS

#6 | 2014-08-28
US20140239307A1
Electricity

REO gate dielectric for III-N device on Si substrate

#7 | 2014-08-21
US20140231818A1
Electricity

AlN cap grown on GaN/REO/silicon substrate structure

#8 | 2014-08-21
US20140231817A1
Electricity

III-N material grown on AIO/AIN buffer on Si substrate

#9 | 2014-08-14
US20140225123A1
Electricity

REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON

#10 | 2014-06-19
US20140167057A1
Electricity

REO/ALO/A1N template for III-N material growth on silicon

#11 | 2014-06-10
US13851219
-

Re-silicide gate electrode for III-N device on Si substrate

#12 | 2014-03-25
US13742612
-

A1N inter-layers in III-N material grown on DBR/silicon substrate

#13 | 2014-03-20
US20140077339A1
Electricity

DELTA DOPING AT Si-Ge INTERFACE

#14 | 2014-03-20
US20140077338A1
Electricity

Si-Ge-Sn ON REO TEMPLATE

#15 | 2014-03-20
US20140077240A1
Electricity

IV MATERIAL PHOTONIC DEVICE ON DBR

#16 | 2014-03-20
US20140076390A1
Electricity

III-V semiconductor interface with graded GeSn on silicon

#17 | 2014-02-27
US20140053894A1
Electricity

GRADED GeSn ON SILICON

#18 | 2014-01-09
US20140008644A1
Electricity

Oxygen engineered single-crystal REO template

#19 | 2014-01-07
US13717182
-

Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices

#20 | 2013-12-19
US20130334536A1
Electricity

SINGLE-CRYSTAL REO BUFFER ON AMORPHOUS SiOx

#21 | 2013-09-26
US20130248853A1
Electricity

Nucleation of III-N on REO templates

#22 | 2013-08-22
US20130214282A1
Electricity

III-N ON SILICON USING NANO STRUCTURED INTERFACE LAYER

#23 | 2013-08-06
US13631906
-

Modification of REO by subsequent III-N EPI process

#24 | 2013-06-20
US20130153918A1
Electricity

REO-Si TEMPLATE WITH INTEGRATED REO LAYERS FOR LIGHT EMISSION

#25 | 2013-04-25
US20130099357A1
Electricity

STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON

#26 | 2013-03-21
US20130071960A1
Electricity

Integrated rare earth devices

#27 | 2013-03-14
US20130062610A1
Electricity

LATTICE MATCHED CRYSTALLINE REFLECTOR

#28 | 2013-03-14
US20130062609A1
Electricity

III-N FET ON SILICON USING FIELD SUPPRESSING REO

#29 | 2013-02-07
US20130032858A1
Electricity

Rare earth oxy-nitride buffered III-N on silicon

#30 | 2012-11-08
US20120280276A1
Electricity

Single Crystal Ge On Si

#31 | 2012-07-19
US20120183767A1
Electricity

HEXAGONAL REO TEMPLATE BUFFER FOR III-N LAYERS ON SILICON

#32 | 2012-06-14
US20120147906A1
Electricity

Laser cooling of modified SOI wafer

#33 | 2012-06-14
US20120145243A1
Electricity

SOLAR CELLS WITH MAGNETICALLY ENHANCED UP-CONVERSION

#34 | 2012-05-03
US20120104567A1
Electricity

IIIOxNy ON REO/Si

#35 | 2012-05-03
US20120104443A1
Electricity

IIIONon single crystal SOI substrate and III n growth platform

#36 | 2012-01-26
US20120019902A1
Electricity

Integrated pump laser and rare earth waveguide amplifier

#37 | 2011-12-01
US20110290313A1
Electricity

Solar cells with engineered spectral conversion

#38 | 2011-09-15
US20110220173A1
Electricity

ACTIVE SOLAR CONCENTRATOR WITH MULTI-JUNCTION DEVICES

#39 | 2011-08-25
US20110203666A1
Electricity

High efficiency solar cell using IIIB material transition layers

#40 | 2011-08-04
US20110188533A1
Electricity

Integrated rare earth devices

#41 | 2011-05-12
US20110108908A1
Electricity

MULTILAYERED BOX IN FDSOI MOSFETS

#42 | 2010-05-06
US20100112736A1
Electricity

Full color display

#43 | 2010-04-08
US20100084680A1
Electricity

Spontaneous/stimulated light emitting μ-cavity device

#44 | 2010-01-05
US11472087
-

Spontaneous/stimulated light emitting μ-cavity device

#45 | 2009-11-26
US20090291535A1
Electricity

Stacked transistors and process

#46 | 2009-10-20
US11257517
-

Full color display including LEDs with rare earth active areas and different radiative transistions

#47 | 2008-06-17
US11257597
-

Selective colored light emitting diode

#48 | 2008-06-12
US20080135924A1
Electricity

Multilayered BOX in FDSOI MOSFETS

#49 | 2008-04-24
US20080093670A1
Electricity

Signal and/or ground planes with double buried insulator layers and fabrication process

#50 | 2008-04-08
US11398910
-

IC on non-semiconductor substrate

#51 | 2007-01-25
US20070018203A1
Electricity

Strain inducing multi-layer cap

#52 | 2007-01-25
US20070018166A1
Electricity

Stacked transistors and process

#53 | 2006-11-02
US20060246691A1
Electricity

Signal and/or ground planes with double buried insulator layers and fabrication process

InventorID:

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