Matthias Kessler

INTEGRATED CIRCUIT INCLUDING A SEMICONDUCTOR-ON-INSULATOR REGION AND A BULK REGION

Transistor devices with high-k insulation layers

Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof

Silicidation of semiconductor devices

Technique for manufacturing semiconductor devices comprising transistors with different threshold voltages

Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof

INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS AND METHODS FOR FABRICATING THE SAME

Methods of forming transistor devices with high-k insulation layers and the resulting devices

Methods of Forming Source/Drain Regions on Transistor Devices

Fabrication of a semiconductor device with extended epitaxial semiconductor regions

Transistor with boot shaped source/drain regions

FLEXIBLE ELECTRONICS WIRING

Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer

Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices

Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation

Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacers

Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrode