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Inventor profile of:

Xinhui Wang

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

48

Last publication date:

2020-02-13

Top Assignees for applications by Xinhui Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Xinhui:

INTERNATIONAL BUSINESS MACHINES CORPORATION 43 ARMONK, NY United States
GLOBALFOUNDRIES Inc. 5 Grand Cayman, Cayman Islands
EcoPhysics AG 1 Duernten, Switzerland
International Businesss Machines Corporation 1 Armonk, NY United States
International Business Machine Corporation 1 Armonk, NY United States

Recent patent applications by Wang Xinhui

Xinhui Wang from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-02-13

US20200051984A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#2 | 2019-09-12

US20190279987A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#3 | 2019-07-04

US20190206871A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#4 | 2018-11-22

US20180337185A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#5 | 2018-10-04

US20180286866A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#6 | 2018-10-04

US20180286761A1

Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning

#7 | 2018-10-04

US20180286760A1

Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning

#8 | 2018-08-09

US20180225405A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#9 | 2017-12-21

US20170365606A1

Structure and method to prevent EPI short between trenches in FinFET eDRAM

#10 | 2017-07-27

US20170213835A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#11 | 2017-04-27

US20170117281A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#12 | 2017-01-26

US20170025418A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#13 | 2017-01-05

US20170005098A1

Structure and method to prevent EPI short between trenches in FinFET eDRAM

#14 | 2016-06-23

US20160181253A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#15 | 2016-06-23

US20160181249A1

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF MANUFACTURE

#16 | 2016-06-09

US20160163711A1

Wet bottling process for small diameter deep trench capacitors

#17 | 2016-04-07

US20160099249A1

Method of forming integrated fin and strap structure for an access transistor of a trench capacitor

#18 | 2015-08-20

US20150236118A1

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

#19 | 2015-05-14

US20150135156A1

Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture

#20 | 2015-03-05

US20150064897A1

Process variability tolerant hard mask for replacement metal gate finFET devices

#21 | 2015-02-12

US20150041911A1

3D transistor channel mobility enhancement

#22 | 2015-02-12

US20150041858A1

3D transistor channel mobility enhancement

#23 | 2015-02-05

US20150037947A1

Wrap-around fin for contacting a capacitor strap of a DRAM

#24 | 2015-02-05

US20150037941A1

FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

#25 | 2015-01-22

US20150021610A1

Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture

#26 | 2014-10-16

US20140308781A1

Dual epitaxial integration for FinFETS

#27 | 2014-10-09

US20140299882A1

Integrated fin and strap structure for an access transistor of a trench capacitor

#28 | 2014-09-18

US20140264522A1

Semiconductor structures with deep trench capacitor and methods of manufacture

#29 | 2014-06-05

US20140151772A1

Uniform finFET gate height

#30 | 2014-03-13

US20140070316A1

Method of replacement source/drain for 3D CMOS transistors

#31 | 2013-12-05

US20130320423A1

Wrap-around fin for contacting a capacitor strap of a DRAM

#32 | 2013-12-05

US20130320422A1

FINFET CONTACTING A CONDUCTIVE STRAP STRUCTURE OF A DRAM

#33 | 2013-05-16

US20130122665A1

Thin box metal backgate extremely thin SOI device

#34 | 2013-02-07

US20130032883A1

Fabrication of field-effect transistors with atomic layer doping

#35 | 2013-02-07

US20130032865A1

FinFET field-effect transistors with atomic layer doping

#36 | 2012-11-08

US20120280322A1

Self-aligned contacts for field effect transistor devices

#37 | 2011-10-13

US20110248321A1

Self-aligned contacts for field effect transistor devices

#38 | 2011-09-29

US20110233688A1

Semiconductor devices with vertical extensions for lateral scaling

#39 | 2011-09-22

US20110227159A1

Thin-BOX metal backgate extremely thin SOI device

#40 | 2010-09-30

US20100244103A1

Structure and method of fabricating FinFET

#41 | 2010-04-29

US20100105187A1

Ultrathin SOI CMOS devices employing differential STI liners

#42 | 2010-03-23

US12359731

Process for making a MCSFET

#43 | 2010-02-18

US20100038679A1

FinFET with longitudinal stress in a channel

#44 | 2009-02-19

US20090045462A1

Ultrathin SOI CMOS devices employing differential STI liners

#45 | 2006-05-25

US20060110937A1

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

#46 | 2005-11-03

US20050245096A1

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

#47 | 2005-05-31

US10185823

Apparatus for detecting CMP endpoint in acidic slurries

#48 | 2005-04-12

US10185818

Method for detecting CMP endpoint in acidic slurries

InventorID:

74789 ⎘