Unoh Kwon

Shared metal gate stack with tunable work function

FIELD EFFECT TRANSISTOR GATE STACK

Shared metal gate stack with tunable work function

Field effect transistor stack with tunable work function

Field effect transistor stack with tunable work function

Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate

Shared metal gate stack with tunable work function

Integrated circuit structure having thin gate dielectric device and thick gate dielectric device

Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor

Semiconductor devices with varying threshold voltage and fabrication methods thereof

Semiconductor device having a gate stack with tunable work function

Field effect transistor gate stack

Field effect transistor stack with tunable work function

Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate

Gate stack formed with interrupted deposition processes and laser annealing

Gate stack formed with interrupted deposition processes and laser annealing

Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs

Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

Integrated circuit with replacement gate stacks and method of forming same

Gate stack with tunable work function

Semiconductor device having a gate stack with tunable work function

Methods and structure to form high K metal gate stack with single work-function metal

Method and structure for III-V nanowire tunnel FETs

Gate stack formed with interrupted deposition processes and laser annealing

Gate stack formed with interrupted deposition processes and laser annealing

Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs

Method and structure for formation of replacement metal gate field effect transistors

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

Unidirectional spacer in trench silicide

Replacement channel TFET

Methods of forming multi-Vt III-V TFET devices

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

PFET GATE STACK MATERIALS HAVING IMPROVED THRESHOLD VOLTAGE, MOBILITY AND NBTI PERFORMANCE

Metal stack for reduced gate resistance

Method and structure for transistors using gate stack dopants with minimal nitrogen penetration

Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme

Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme

Multi-composition gate dielectric field effect transistors

Multiple thickness gate dielectrics for replacement gate field effect transistors

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

Field effect transistors having multiple effective work functions

Trapping dislocations in high-mobility fins below isolation layer

Variable length multi-channel replacement metal gate including silicon hard mask

Annealing oxide gate dielectric layers for replacement metal gate field effect transistors

Methods and structure to form high K metal gate stack with single work-function metal

Low Threshold Voltage and Inversion Oxide Thickness Scaling for a High-K Metal Gate P-Type MOSFET

Multi-composition gate dielectric field effect transistors

Multiple thickness gate dielectrics for replacement gate field effect transistors

Variable length multi-channel replacement metal gate including silicon hard mask

Semiconductor devices having different gate oxide thicknesses

FIN Field Effect Transistors Having Multiple Threshold Voltages

Intrinsic Channel Planar Field Effect Transistors Having Multiple Threshold Voltages

Gate structures and methods of manufacture

Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor

Scaled equivalent oxide thickness for field effect transistor devices

Structure and method of Tscaling for high k metal gate technology

Multi-layer work function metal replacement gate

Non-volatile memory structure employing high-k gate dielectric and metal gate

Scavenging metal stack for a high-K gate dielectric

Semiconductor devices having different gate oxide thicknesses

Scavenging metal stack for a high-K gate dielectric

ETCH STOP LAYER FORMATION IN METAL GATE PROCESS

Etch stop layer formation in metal gate process

REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT

Replacement Gate With Reduced Gate Leakage Current

Replacement gate with reduced gate leakage current

Replacement metal gate structures providing independent control on work function and gate leakage current

Structure and method of Tscaling for high k metal gate technology

Scaling of metal gate with aluminum containing metal layer for threshold voltage shift

Replacement metal gate structures for effective work function control

Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor

Replacement gate having work function at valence band edge

Gate structures and methods of manufacture

Non-volatile memory structure employing high-k gate dielectric and metal gate

Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate

Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET

Low Threshold Voltage And Inversion Oxide Thickness Scaling For A High-K Metal Gate P-Type MOSFET

High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof

Scaled equivalent oxide thickness for field effect transistor devices

Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG)

Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor

Structure and method to make replacement metal gate and contact metal

Replacement gate with reduced gate leakage current

Structure and method of Tscaling for high κ metal gate technology

Replacement gate devices with barrier metal for simultaneous processing

Replacement metal gate structures providing independent control on work function and gate leakage current

Replacement gate having work function at valence band edge

Replacement metal gate structures for effective work function control

Scaled equivalent oxide thickness for field effect transistor devices

Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures

Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG)

High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof

Prevention of oxygen absorption into high-K gate dielectric of silicon-on-insulator based finFET devices

Semiconductor device having dual metal gates and method of manufacture

Method of forming gate stack and structure thereof