Fishkill, New York
United States
18
2015-05-21
The entities that hold a legal rights for patent applications filed by inventor Wang Gan:
Gan Wang from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Replacement gate MOSFET with a high performance gate electrode
#2 | 2015-04-23Methods for forming a self-aligned maskless junction butting for integrated circuits
#3 | 2015-03-12Semiconductor-on-insulator device including stand-alone well implant to provide junction butting
#4 | 2015-03-12Semiconductor-on-insulator device including stand-alone well implant to provide junction butting
#5 | 2015-02-26FinFET structure and method to adjust threshold voltage in a FinFET structure
#6 | 2014-09-18Method and structure for dielectric isolation in a fin field effect transistor
#7 | 2014-08-07FinFET structure and method to adjust threshold voltage in a FinFET structure
#8 | 2014-03-06Partially-blocked well implant to improve diode ideality with SiGe anode
#9 | 2014-03-06Partially-blocked well implant to improve diode ideality with SiGe anode
#10 | 2014-01-09DEEP TRENCH HEAT SINK
#11 | 2013-07-11Replacement gate MOSFET with a high performance gate electrode
#12 | 2013-04-25FinFET structure and method to adjust threshold voltage in a FinFET structure
#13 | 2013-02-07Self-adjusting latch-up resistance for CMOS devices
#14 | 2012-07-26FET structures with trench implantation to improve back channel leakage and body resistance
#15 | 2012-06-07Self-aligned contact combined with a replacement metal gate/high-K gate dielectric
#16 | 2012-05-03Replacement gate MOSFET with a high performance gate electrode
#17 | 2012-04-12FET structures with trench implantation to improve back channel leakage and body resistance
#18 | 2011-12-27Replacement metal gate method
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