Inventor profile of:

Chee-Wee Liu

City:

Hsinchu

Country:

Taiwan

Published Applications:

14

Last publication date:

2024-04-11

Top Assignees for applications by Chee-Wee Liu

The entities that hold a legal rights for patent applications filed by inventor Liu Chee-Wee:

Recent patent applications by Liu Chee-Wee

Chee-Wee Liu from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-04-11
US20240120409A1
Electricity

Method for non-resist nanolithography

#2 | 2023-11-16
US20230369407A1
Electricity

Nanowire stack GAA device with selectable numbers of channel strips

#3 | 2023-03-09
US20230074496A1
Electricity

SOURCE AND DRAIN EPITAXIAL LAYERS

#4 | 2023-01-19
US20230015775A1
Electricity

Nanowire stack GAA device with selectable numbers of channel strips

#5 | 2017-07-06
US20170194464A1
Electricity

Three-dimensional transistor and methods of manufacturing thereof

#6 | 2014-12-25
US20140374834A1
Electricity

GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE

#7 | 2014-09-18
US20140264439A1
Electricity

Semiconductor structure

#8 | 2014-05-15
US20140131768A1
Electricity

Bridge structure

#9 | 2009-12-10
US20090302349A1
Electricity

STRAINED GERMANIUM FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

#10 | 2007-03-01
US20070045610A1
Electricity

Transistor device with strained germanium (Ge) layer by selectively growth and fabricating method thereof

#11 | 2006-12-21
US20060284164A1
Electricity

Strained germanium field effect transistor and method of making the same

#12 | 2006-11-23
US20060263959A1
Electricity

Method for fabricating semiconductor device

#13 | 2005-08-18
US20050179028A1
Electricity

Construction of thin strain-relaxed SiGe layers and method for fabricating the same

#14 | 2005-07-14
US20050153491A1
Electricity

Process of forming low-strain(relaxed) silicon geranium crystal layer

InventorID:

759299 ⎘