Chung Hon LAM

ELECTRODE RECESSED PHASE CHANGE MEMORY PORE CELL

Void control of confined phase change memory

Void control of confined phase change memory

3D phase change memory with high endurance

Phase change memory with high endurance

Metal nitride keyhole or spacer phase change memory cell structures

Metal nitride keyhole or spacer phase change memory cell structures

Phase-change memory cells

Self aligned fin-type programmable memory cell

Phase change memory cell having vertical channel access transistor

Content addressable memories with wireline compensation

High-endurance phase change memory devices and methods for operating the same

Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocks

Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process

Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

PCRAM with current flowing laterally relative to axis defined by electrodes

Self-aligned bit line under word line memory array

Self aligned fin-type programmable memory cell

Phase change memory cell having vertical channel access transistor

Reprogrammable fuse structure and method

PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY

Phase change memory having one or more non-constant doping profiles

Methods and apparatus for reducing defect bits in phase change memory

Phase change memory cell having vertical channel access transistor

Phase change memory cells having vertical channel access transistor and memory plane

Phase change material based temperature sensor

Phase change memory with dual word lines and source lines and method of operating same

Current constricting phase change memory element structure

Polysilicon plug bipolar transistor for phase change memory

Phase change memory program method without over-reset

Dielectric mesh isolated phase change structure for phase change memory

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Fully self-aligned pore-type memory cell having diode access device

MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE

High density content addressable memory using phase change devices

Phase change memory cell with reduced switchable volume

Process for PCM integration with poly-emitter BJT as access device

Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide

Memory cell having a buried phase change region and method for fabricating the same

Fill-in etching free pore device

METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY

INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS

Phase change memory dynamic resistance test and manufacturing methods

Programmable resistive memory with diode structure

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Programmable via structure for three dimensional integration technology

Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

Phase change memory with dual word lines and source lines and method of operating same

Block erase for phase change memory

Current constricting phase change memory element structure

Phase change memory cell with vertical transistor

Phase change material based temperature sensor

Method of Forming Phase Change Memory Cell With Reduced Switchable Volume

Write operations for phase-change-material memory

Multi-bit memory error detection and correction system and method

Heat-shielded low power PCM-based reprogrammable eFUSE device

Method for manufacturing a phase change memory device with pillar bottom electrode

Resistance Limited Phase Change Memory Material

Scaled-down phase change memory cell in recessed heater

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Layout and process to contact sub-lithographic structures

Thin film phase change memory cell formed on silicon-on-insulator substrate

Heat-shielded low power PCM-based reprogrammable EFUSE device

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Reprogrammable fuse structure and method

Enhanced Programming Performance in a Nonvolatile Memory Device Having a Bipolar Programmable Storage Element

Non-volatile memory architecture employing bipolar programmable resistance storage elements

Phase change memory cell with limited switchable volume

Programmable via structure for three dimensional integration technology

Layout and process to contact sub-lithographic structures

Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide

Methods for forming uniform lithographic features

Write operations for phase-change-material memory

Non-volatile content addressable memory using phase-change-material memory elements

Reprogrammable fuse structure and method

Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element

Structure for confining the switching current in phase memory (PCM) cells

Precision tuning of a phase-change resistive element

Field-enhanced programmable resistance memory cell

Non-volatile resistance switching memory