Ossining, New York
United States
30
2015-01-29
The entities that hold a legal rights for patent applications filed by inventor LI Jing:
Jing LI from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Self-adjusting phase change memory storage module
#2 | 2015-01-01Self-aligned patterning technique for semiconductor device features
#3 | 2015-01-01Self-aligned patterning technique for semiconductor device features
#4 | 2015-01-01Phase change memory cell with large electrode contact area
#5 | 2014-09-18Adaptive reference tuning for endurance enhancement of non-volatile memories
#6 | 2014-09-18Adaptive reference tuning for endurance enhancement of non-volatile memories
#7 | 2014-09-18SELF-ALIGNED APPROACH FOR DRAIN DIFFUSION IN FIELD EFFECT TRANSISTORS
#8 | 2014-09-18SELF-ALIGNED APPROACH FOR DRAIN DIFFUSION IN FIELD EFFECT TRANSISTORS
#9 | 2014-09-11Electrical coupling of memory cell access devices to a word line
#10 | 2014-09-11SINGLE-MASK SPACER TECHNIQUE FOR SEMICONDUCTOR DEVICE FEATURES
#11 | 2014-09-11Electrical coupling of memory cell access devices to a word line
#12 | 2014-08-26Vertical surround gate formation compatible with CMOS integration
#13 | 2014-06-19Phase change memory cell with large electrode contact area
#14 | 2014-06-19Phase change memory cell with large electrode contact area
#15 | 2014-04-03Multi-bit resistance measurement
#16 | 2014-02-20Method of reducing system power with mixed cell memory array
#17 | 2014-02-20Memory controller for memory with mixed cell array and method of controlling the memory
#18 | 2014-02-20Memory with mixed cell array and system including the memory
#19 | 2014-02-20Memory controller for memory with mixed cell array and method of controlling the memory
#20 | 2014-02-18Single-mask spacer technique for semiconductor device features
#21 | 2014-01-23Writing scheme for phase change material-content addressable memory
#22 | 2014-01-23Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
#23 | 2014-01-23Decoding scheme for bipolar-based diode three-dimensional memory requiring unipolar programming
#24 | 2013-11-28Drift-insensitive or invariant material for phase change memory
#25 | 2013-11-28Drift-insensitive or invariant material for phase change memory
#26 | 2013-10-15Writing scheme for phase change material-content addressable memory
#27 | 2013-08-29Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
#28 | 2013-08-29Sense scheme for phase change material content addressable memory
#29 | 2013-02-07Content addressable memories with wireline compensation
#30 | 2012-03-15Reconfigurable multi-level sensing scheme for semiconductor memories
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