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Inventor profile of:

Matthew Charles

City:

Grenoble

Country:

France

Published Applications:

Last publication date:

2023-05-04

Top Assignees for applications by Matthew Charles

The entities that hold a legal rights for patent applications filed by inventor Charles Matthew:

Commissariat A L'Energie Atomique Et Aux Energies Alternatives 12 Paris, France
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 2 PARIS, France
Commissariat à I'Énergie Atomique et aux Énergies Alternatives 2 Paris, France
Commissariat à l'Énergie Atomique et aux Énergies Alternatives 2 Paris, France
UNIVERSITE GRENOBLE ALPES 1 Saint-Martin-d'Hères, France
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES 1 Paris, France
Commissariat à I'Énergie Atomique et aux Énergie Atomique et aux Énergies Alternatives 1 Paris, France
C.N.R.S. 1 Paris, France
Commissariat a I'energie atomique et aux energies alternatives 1 Paris, France

Recent patent applications by Charles Matthew

Matthew Charles from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-05-04

US20230136949A1

Electricity

METHOD OF VERTICAL GROWTH OF A III-V MATERIAL

#2 | 2022-11-10

US20220359479A1

Electricity

Method for producing nitride mesas each intended to form an electronic or optoelectronic device

#3 | 2022-08-11

US20220251730A1

Chemistry; metallurgy

Method for producing a nitride layer

#4 | 2022-01-20

US20220020810A1

Electricity

Multi-colour electroluminescent display device and method for manufacturing such a device

#5 | 2021-11-04

US20210343525A1

Electricity

SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER COMPRISING A HEXAGONAL MESH CRYSTALLINE STRUCTURE

#6 | 2021-04-22

US20210119075A1

Electricity

Process for manufacturing an optoelectronic device having a diode matrix

#7 | 2019-12-05

US20190371963A1

Electricity

Method of manufacturing of a GaN light emitting diode

#8 | 2019-10-31

US20190334022A1

Electricity

High electron mobility transistor and method of fabrication having reduced gate length and leak current

#9 | 2019-07-11

US20190214523A1

Electricity

Method for making a gallium nitride light-emitting diode

#10 | 2019-07-04

US20190206678A1

Electricity

Method for producing an epitaxial layer on a growth plate

#11 | 2019-04-11

US20190109209A1

Electricity

Method for manufacturing electronic component for heterojunction provided with buried barrier layer

#12 | 2018-12-06

US20180350870A1

Electricity

Optoelectronic device comprising a light-emitting component and a transistor

#13 | 2018-01-11

US20180012757A1

Electricity

Semiconductor structure having a group iii-v semiconductor layer comprising a hexagonal mesh crystalline structure

#14 | 2017-03-23

US20170084697A1

Electricity

Semiconductor structure with enhanced withstand voltage

#15 | 2016-09-29

US20160284915A1

Electricity

PHOTOVOLTAIC CELL WITH SILICON HETEROJUNCTION

#16 | 2014-05-29

US20140147977A1

Electricity

Process for fabricating an enhancement mode heterojunction transistor

InventorID:

778996 ⎘