Inventor profile of:

Ming-Te Chen

City:

Hsinchu City

Country:

Taiwan

Published Applications:

26

Last publication date:

2025-02-27

Top Assignees for applications by Ming-Te Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Ming-Te:

Recent patent applications by Chen Ming-Te

Ming-Te Chen from Hsinchu City, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-02-27
US20250072028A1
Electricity

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

#2 | 2024-11-21
US20240387734A1
Electricity

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES

#3 | 2024-11-14
US20240379825A1
Electricity

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

#4 | 2023-11-23
US20230377994A1
Electricity

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES

#5 | 2022-10-06
US20220320319A1
Electricity

Semiconductor structure and manufacturing method of the same

#6 | 2022-03-17
US20220084890A1
Electricity

Method of manufacturing semiconductor devices and semiconductor devices

#7 | 2022-02-24
US20220059684A1
Electricity

Method of manufacturing semiconductor devices and semiconductor devices

#8 | 2021-03-18
US20210082707A1
Electricity

Method of manufacturing a semiconductor device and a semiconductor device

#9 | 2021-03-11
US20210074593A1
Electricity

Method of manufacturing semiconductor devices and semiconductor devices

#10 | 2020-04-30
US20200135915A1
Electricity

Method of manufacturing semiconductor devices using a capping layer in forming gate electrode and semiconductor devices

#11 | 2017-08-31
US20170247790A1
Chemistry; metallurgy

High-throughput system and method for post-implantation single wafer warm-up

#12 | 2017-06-22
US20170178861A1
Electricity

Ion beam generator, ion implantation apparatus including an ion beam generator and method of using an ion beam generator

#13 | 2017-02-02
US20170032970A1
Electricity

Method of forming finFET gate oxide

#14 | 2016-05-26
US20160145737A1
Chemistry; metallurgy

Processing apparatus, ion implantation apparatus and ion implantation method

#15 | 2016-01-21
US20160020086A1
Electricity

DOPING CONTROL METHODS AND RELATED SYSTEMS

#16 | 2015-10-22
US20150303080A1
Electricity

Adjusting intensity of laser beam during laser operation on a semiconductor device

#17 | 2015-08-06
US20150221515A1
Electricity

Method and apparatus for cooling wafer in ion implantation process

#18 | 2015-07-02
US20150187616A1
Electricity

MECHANISMS OF ADJUSTABLE LASER BEAM FOR LASER SPIKE ANNEALING

#19 | 2015-01-15
US20150014807A1
Electricity

Method of forming a shallow trench isolation structure

#20 | 2014-09-18
US20140273533A1
Electricity

Semiconductor Annealing Method Utilizing a Vacuum Environment

#21 | 2014-09-18
US20140273421A1
Electricity

High-throughput system and method for post-implantation single wafer warm-up

#22 | 2014-09-18
US20140272178A1
Electricity

Multi-platen ion implanter and method for implanting multiple substrates simultaneously

#23 | 2014-08-14
US20140227453A1
Chemistry; metallurgy

Processing apparatus and ion implantation apparatus

#24 | 2014-06-26
US20140179027A1
Electricity

Adjusting intensity of laser beam during laser operation on a semiconductor device

#25 | 2014-06-12
US20140158155A1
Performing operations; transporting

Wafer cleaning

#26 | 2014-06-05
US20140154414A1
Chemistry; metallurgy

Atomic layer deposition apparatus and method

InventorID:

786575 ⎘