Dresden
Germany
24
2014-09-04
The entities that hold a legal rights for patent applications filed by inventor Carter Richard:
Richard Carter from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Metal gate structure for semiconductor devices
#2 | 2014-03-20Encapsulation of closely spaced gate electrode structures
#3 | 2014-01-16Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum
#4 | 2013-10-31CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal
#5 | 2013-10-24ENHANCED DEVICE RELIABILITY OF A SEMICONDUCTOR DEVICE BY PROVIDING SUPERIOR PROCESS CONDITIONS IN HIGH-K FILM GROWTH
#6 | 2013-10-24MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR
#7 | 2013-05-23Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween
#8 | 2013-03-28Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
#9 | 2013-02-07High-K metal gate electrode structures formed by early cap layer adaptation
#10 | 2013-01-22Methods of forming semiconductor devices with replacement gate structures
#11 | 2012-08-23Semiconductor device comprising self-aligned contact elements
#12 | 2012-08-23Fin-transistor formed on a patterned STI region by late fin etch
#13 | 2012-08-02Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
#14 | 2012-06-21Encapsulation of closely spaced gate electrode structures
#15 | 2012-01-12Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device
#16 | 2011-11-03Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy deposition
#17 | 2011-11-03Maintaining Integrity of a High-K Gate Stack After Embedding a Stressor Material by Using a Liner
#18 | 2011-08-04Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device
#19 | 2010-12-30Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning
#20 | 2010-11-18Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process
#21 | 2010-11-18Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
#22 | 2010-09-30Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy
#23 | 2010-09-30Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material
#24 | 2010-08-05Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum
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