Inventor profile of:

I-Chen Yang

City:

Hsinchu

Country:

Taiwan

Published Applications:

18

Last publication date:

2016-05-12

Top Assignees for applications by I-Chen Yang

The entities that hold a legal rights for patent applications filed by inventor Yang I-Chen:

Recent patent applications by Yang I-Chen

I-Chen Yang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-05-12
US20160133718A1
Electricity

Semiconductor device and method for fabricating the same

#2 | 2016-04-26
US14723094
Electricity

Memory device and method for fabricating the same

#3 | 2015-01-22
US20150023098A1
Physics

Operation method of multi-level memory

#4 | 2014-08-21
US20140231900A1
Electricity

Non-volatile memory

#5 | 2014-06-12
US20140159134A1
Electricity

Non-volatile memory and manufacturing method thereof

#6 | 2012-10-18
US20120261739A1
Electricity

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

#7 | 2012-06-07
US20120140556A1
Physics

METHOD OF OPERATING FLASH MEMORY

#8 | 2012-05-24
US20120127795A1
Electricity

Non-volatile memory and operating method of memory cell

#9 | 2012-05-24
US20120126307A1
Electricity

Non-volatile memory having isolation structures in and above a substrate and manufacturing method thereof

#10 | 2012-03-08
US20120056259A1
Electricity

Memory cell, memory device and method for manufacturing memory cell

#11 | 2011-07-28
US20110182123A1
Electricity

Flash memory

#12 | 2010-12-16
US20100314680A1
Electricity

Memory array

#13 | 2010-12-02
US20100302855A1
Physics

Memory device and methods for fabricating and operating the same

#14 | 2010-12-02
US20100302845A1
Physics

Memory device and methods for fabricating and operating the same

#15 | 2010-11-18
US20100289093A1
Electricity

Semiconductor device and method for fabricating the same

#16 | 2010-11-11
US20100284220A1
Physics

Operation method of non-volatile memory

#17 | 2010-05-06
US20100112797A1
Electricity

Method for forming a memory array

#18 | 2009-07-16
US20090180332A1
Physics

Operation method of nitride-based flash memory and method of reducing coupling interference

InventorID:

792595 ⎘