Inventor profile of:

Simon Jeannot

City:

Grenoble

Country:

France

Published Applications:

24

Last publication date:

2025-12-18

Top Assignees for applications by Simon Jeannot

The entities that hold a legal rights for patent applications filed by inventor Jeannot Simon:

Recent patent applications by Jeannot Simon

Simon Jeannot from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-12-18
US20250386516A1
Electricity

MEMORY CIRCUIT BASED ON A PHASE-CHANGE MATERIAL

#2 | 2025-08-07
US20250253232A1
Electricity

MANUFACTURING METHOD OF AN ELECTRONIC CHIP INCLUDING A MEMORY CIRCUIT

#3 | 2025-07-03
US20250218469A1
Physics

ELECTRONIC DEVICE

#4 | 2025-06-05
US20250185242A1
Electricity

METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT

#5 | 2025-05-15
US20250159906A1
Electricity

ELECTRONIC DEVICE

#6 | 2024-12-05
US20240407272A1
Electricity

ELECTRONIC DEVICE

#7 | 2024-03-07
US20240081160A1
Electricity

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

#8 | 2021-09-09
US20210280779A1
Electricity

Phase-change memory cell having a compact structure

#9 | 2021-02-25
US20210057426A1
Electricity

Integrated circuit and method of manufacturing the same

#10 | 2019-10-24
US20190326510A1
Electricity

Phase-change memory cell having a compact structure

#11 | 2019-07-11
US20190214434A1
Electricity

Resistive memory cell having a compact structure

#12 | 2018-11-15
US20180330780A1
Physics

Resistive RAM memory cell

#13 | 2018-08-16
US20180233511A1
Electricity

Integrated circuit and method of manufacturing the same

#14 | 2018-01-11
US20180012935A1
Electricity

Resistive memory cell having a compact structure

#15 | 2017-12-26
US15366662
Physics

Method for determining a leakage current through an inter-gate dielectric structure of a flash memory cell

#16 | 2017-11-02
US20170317275A1
Electricity

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

#17 | 2017-06-29
US20170186759A1
Electricity

Integrated circuit and method of manufacturing the same

#18 | 2016-12-29
US20160380190A1
Electricity

Phase-change memory cell having a compact structure

#19 | 2016-12-29
US20160380030A1
Electricity

Resistive memory cell having a compact structure

#20 | 2016-09-22
US20160276451A1
Electricity

Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit

#21 | 2014-06-12
US20140159202A1
Electricity

Method for forming a three-dimensional structure of metal-insulator-metal type

#22 | 2011-09-15
US20110221035A1
Electricity

PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A METAL-INSULATOR-METAL CAPACITOR AND CORRESPONDING INTEGRATED CIRCUIT

#23 | 2010-08-12
US20100200964A1
Electricity

Method of producing a porous dielectric element and corresponding dielectric element

#24 | 2008-06-19
US20080142929A1
Electricity

Method of producing a porous dielectric element and corresponding dielectric element

InventorID:

792655 ⎘