Rosemount, Minnesota
United States
38
2014-01-16
The entities that hold a legal rights for patent applications filed by inventor Lu Yong:
Yong Lu from Rosemount, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetic memory with separate read and write paths
#2 | 2013-01-03MRAM diode array and access method
#3 | 2012-09-13Bit line charge accumulation sensing for resistive changing memory
#4 | 2012-09-13Transmission gate-based spin-transfer torque memory unit
#5 | 2012-02-16Three dimensionally stacked non volatile memory units
#6 | 2012-02-16Mirrored-gate cell for non-volatile memory
#7 | 2011-09-22Transmission gate-based spin-transfer torque memory unit
#8 | 2011-08-11Memory array with read reference voltage cells
#9 | 2011-06-09Variable write and read methods for resistive random access memory
#10 | 2011-04-21Magnetic memory with separate read and write paths
#11 | 2011-03-10MRAM diode array and access method
#12 | 2010-10-21Three dimensionally stacked non volatile memory units
#13 | 2010-09-23Variable write and read methods for resistive random access memory
#14 | 2010-09-16Memory array with read reference voltage cells
#15 | 2010-08-19Single line MRAM
#16 | 2010-08-12nvSRAM having variable magnetic resistors
#17 | 2010-06-03Bit line charge accumulation sensing for resistive changing memory
#18 | 2010-05-20MICRO MAGNETIC DEVICE WITH MAGNETIC SPRING
#19 | 2010-05-13DOUBLE SOURCE LINE-BASED MEMORY ARRAY AND MEMORY CELLS THEREOF
#20 | 2010-05-13Mirrored-gate cell for non-volatile memory
#21 | 2010-04-15Computer memory device with status register
#22 | 2010-04-15Temperature dependent system for reading ST-RAM
#23 | 2010-04-15HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY
#24 | 2010-03-18Memory array with read reference voltage cells
#25 | 2010-03-18Variable write and read methods for resistive random access memory
#26 | 2010-03-04Data devices including multiple error correction codes and methods of utilizing
#27 | 2010-02-11Magnetic memory with separate read and write paths
#28 | 2010-01-14Transmission gate-based spin-transfer torque memory unit
#29 | 2008-05-13State save-on-power-down using GMR non-volatile elements
#30 | 2006-08-15State save-on-power-down using GMR non-volatile elements
#31 | 2005-12-06State save-on-power-down using GMR non-volatile elements
#32 | 2005-10-13Method for forming magneto-resistive memory cells with shape anisotropy
#33 | 2005-10-13Magneto-resistive memory cell structures with improved selectivity
#34 | 2005-07-19Magneto-resistive memory cell structures with improved selectivity
#35 | 2005-06-14Magneto-resistive memory cell with shape anistropy and memory device thereof
#36 | 2005-05-03Magnetoresistive random access memory (MRAM) cell patterning
#37 | 2005-04-28Bridge-type magnetic random access memory (MRAM) latch
#38 | 2005-03-08Bridge-type magnetic random access memory (MRAM) latch
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