Ralph H. Johnson

WAVEFUNCTION DECONFINEMENT ELECTRO-ABSORPTION MODULATOR

Passivation of VCSEL sidewalls

VCSEL with integrated electrically modulated intra-cavity graphene absorber

Lasers with GaPSb barrier layers

Lasers With InGaAsP Quantum Wells And GaAsP Barrier Layers

Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition

LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS

Vertical cavity surface emitting laser with undoped top mirror

Surface gratings on VCSELS for polarization pinning

VCSEL optimized for high speed data

Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption

Vertical cavity surface emitting laser with undoped top mirror

Semiconductor having enhanced carbon doping

Vertical cavity surface emitting laser having multiple top-side contacts

Optimizing VCSEL mirrors for improving temperature response

Migration enhanced epitaxy fabrication of active regions having quantum wells

Vertical cavity surface emitting laser including indium and nitrogen in the active region

Versatile method and system for single mode VCSELs

Passivation of VCSEL sidewalls

Vertical cavity surface emitting laser having strain reduced quantum wells

Nitrogen sources for molecular beam epitaxy

Semiconductor having enhanced carbon doping

Versatile method and system for single mode VCSELs

Optoelectronic package

POLARIZATION CONTROL IN VERTICAL CAVITY SURFACE EMITTING LASERS USING OFF-AXIS EPITAXY

Vertical cavity surface emitting laser including trench and proton implant isolation

Mechanical stabilization of lattice mismatched quantum wells

Light emitting semiconductor device having an electrical confinement barrier near the active region

Migration enhanced epitaxy fabrication of active regions having quantum wells

Surface gratings on VCSELs for polarization pinning

Grating-coupled surface emitting laser with gallium arsenide substrate

Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region

VCSEL mode-transforming phase filter with enhanced performance

Indium free vertical cavity surface emitting laser

Vertical cavity surface emitting laser having multiple top-side contacts

Vertical cavity surface emitting laser with undoped top mirror

VCSEL structure insensitive to mobile hydrogen

Metamorphic long wavelength high-speed photodiode

Distributed bragg reflector for optoelectronic device

Vertical cavity surface emitting laser including indium and antimony in the active region

Single mode VCSEL

Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells

Distributed bragg reflector for optoelectronic device

Vertical cavity surface emitting laser including indium in the active region

Migration enhanced epitaxy fabrication of quantum wells

Multicomponent barrier layers in quantum well active regions to enhance confinement and speed

Versatile method and system for single mode VCSELs

Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers

Long wavelength VCSEL device processing

Hybrid mirror VCSEL

Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells

System for developing a nitrogen-containing active region

Electron affinity engineered VCSELs

Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers