Tokyo
Japan
18
2025-12-04
The entities that hold a legal rights for patent applications filed by inventor Taniguchi Yasuhiro:
Yasuhiro Taniguchi from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
NON-VOLATILE MEMORY CELL AND NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
#2 | 2021-08-19MEMORY CELL, NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
#3 | 2019-12-05Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device
#4 | 2019-09-26Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
#5 | 2018-01-18Semiconductor memory device
#6 | 2014-10-02Non-volatile semiconductor memory device having depletion-type and enhancement-type channel regions
#7 | 2014-09-25Non-volatile semiconductor memory device
#8 | 2014-07-24Non-volatile semiconductor memory device
#9 | 2012-03-15Semiconductor device utilizing dummy gate to enhance processing precision
#10 | 2010-10-07Method for manufacturing a semiconductor device including memory cell formation region
#11 | 2010-07-29SEMICONDUCTOR DEVICE
#12 | 2010-01-14Method of manufacturing a semiconductor device
#13 | 2007-12-27Semiconductor integrated circuit device having deposited layer for gate insulation
#14 | 2007-12-20Semiconductor integrated circuit device having deposited layer for gate insulation
#15 | 2007-09-20Semiconductor integrated circuit device and a method of manufacturing the same
#16 | 2007-09-06Method of manufacturing a semiconductor device
#17 | 2006-12-07Semiconductor integrated circuit device having deposited layer for gate insulation
#18 | 2005-11-03Semiconductor integrated circuit device having deposited layer for gate insulation
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