Inventor profile of:

HONG YANG

City:

RICHARDSON, Texas

Country:

United States

Published Applications:

32

Last publication date:

2023-08-03

Top Assignees for applications by HONG YANG

The entities that hold a legal rights for patent applications filed by inventor YANG HONG:

Recent patent applications by YANG HONG

HONG YANG from RICHARDSON, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-08-03
US20230246107A1
Electricity

VERTICAL TRENCH GATE MOSFET WITH INTEGRATED SCHOTTKY DIODE

#2 | 2022-07-14
US20220223731A1
Electricity

VERTICAL TRENCH GATE FET WITH SPLIT GATE

#3 | 2022-06-30
US20220208601A1
Electricity

Trench shield isolation layer

#4 | 2022-03-24
US20220093754A1
Electricity

Dual shield oxide damage control

#5 | 2022-02-17
US20220052165A1
Electricity

Semiconductor device including a lateral insulator

#6 | 2021-09-02
US20210272842A1
Electricity

TRANSISTOR DEVICE WITH SINKER CONTACTS AND METHODS FOR MANUFACTURING THE SAME

#7 | 2020-10-22
US20200335589A1
Electricity

SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS

#8 | 2020-10-01
US20200312710A1
Electricity

Trench shield isolation layer

#9 | 2020-07-02
US20200212219A1
Electricity

Vertical trench gate MOSFET with integrated Schottky diode

#10 | 2020-07-02
US20200212218A1
Electricity

Vertical trench gate MOSFET with deep well region for junction termination

#11 | 2019-09-26
US20190296115A1
Electricity

Semiconductor device having polysilicon field plate for power MOSFETs

#12 | 2019-05-23
US20190157142A1
Electricity

Semiconductor product and fabrication process

#13 | 2019-02-19
US15928492
Electricity

Semiconductor product and fabrication process

#14 | 2018-09-13
US20180261495A1
Electricity

Transistor device with sinker contacts and methods for manufacturing the same

#15 | 2018-04-12
US20180102424A1
Electricity

Power MOSFET with metal filled deep sinker contact for CSP

#16 | 2018-03-01
US20180061828A1
Electricity

High quality deep trench oxide

#17 | 2018-01-04
US20180006145A1
Electricity

Power MOSFET with metal filled deep sinker contact for CSP

#18 | 2017-10-05
US20170288052A1
Electricity

Multiple shielding trench gate FET

#19 | 2017-08-03
US20170222041A1
Electricity

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

#20 | 2016-12-22
US20160372463A1
Electricity

High quality deep trench oxide

#21 | 2016-11-10
US20160329423A1
Electricity

Multiple shielding trench gate FET

#22 | 2016-10-27
US20160315159A1
Electricity

Low resistance sinker contact

#23 | 2016-10-27
US20160315155A1
Electricity

Field effect transistor and method of making

#24 | 2016-10-04
US14739230
Electricity

High quality deep trench oxide

#25 | 2016-09-27
US14974834
Electricity

IC having failsafe fuse on field dielectric

#26 | 2016-08-02
US14692337
Electricity

Field effect transistor and method of making

#27 | 2016-07-19
US14695290
Electricity

Low resistance sinker contact

#28 | 2016-05-19
US20160141204A1
Electricity

Trench having thick dielectric selectively on bottom portion

#29 | 2016-05-05
US20160126193A1
Electricity

Method of fabricating a tungsten plug in a semiconductor device

#30 | 2016-03-29
US14706927
Electricity

Multiple shielding trench gate fet

#31 | 2014-08-07
US20140220761A1
Electricity

Reduction of polysilicon residue in a trench for polysilicon trench filling processes

#32 | 2014-06-10
US13787044
-

Dual RESURF trench field plate in vertical MOSFET

InventorID:

863393 ⎘