Inventor profile of:

Stephan Lutgen

City:

Dresden

Country:

Germany

Published Applications:

41

Last publication date:

2025-03-13

Top Assignees for applications by Stephan Lutgen

The entities that hold a legal rights for patent applications filed by inventor Lutgen Stephan:

Recent patent applications by Lutgen Stephan

Stephan Lutgen from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-03-13
US20250089414A1
Electricity

SYSTEMS AND METHODS FOR IMPROVED DISPLAYS

#2 | 2024-06-25
US18160911
Electricity

Reduction of surface recombination losses in micro-LEDs

#3 | 2023-12-26
US18183936
Electricity

Bonding methods for light emitting diodes

#4 | 2023-10-19
US20230335518A1
Electricity

ALN-BASED HYBRID BONDING

#5 | 2023-10-03
US17531301
Physics

Cascaded pupil-replicating waveguides

#6 | 2023-02-14
US17242002
Electricity

Reduction of surface recombination losses in micro-LEDs

#7 | 2022-12-15
US20220399203A1
Electricity

HYBRID BONDING BASED MANUFACTURE OF LIGHT EMITTING DIODES

#8 | 2022-11-03
US20220352441A1
Electricity

CU PADS FOR REDUCED DISHING IN LOW TEMPERATURE ANNEALING AND BONDING

#9 | 2022-08-25
US20220271207A1
Electricity

MICRO-LED DESIGN FOR CHIEF RAY WALK-OFF COMPENSATION

#10 | 2022-08-18
US20220262637A1
Electricity

Bonding methods for light emitting diodes

#11 | 2022-07-28
US20220238755A1
Electricity

MICRON-SIZED LIGHT EMITTING DIODE DESIGNS

#12 | 2022-06-02
US20220173159A1
Electricity

Low resistance current spreading to n-contacts of micro-LED array

#13 | 2022-01-25
US16252442
Physics

Cascaded pupil-replicating waveguides

#14 | 2021-04-15
US20210111319A1
Electricity

Micro-LED design for chief ray walk-off compensation

#15 | 2021-02-04
US20210036184A1
Electricity

Micron-sized light emitting diode designs

#16 | 2020-11-12
US20200357972A1
Electricity

Hybrid-bonded and run-out compensated light emitting diodes

#17 | 2020-11-12
US20200357968A1
Electricity

Bonding methods for light emitting diodes

#18 | 2020-11-12
US20200357954A1
Electricity

Bonding methods for light emitting diodes

#19 | 2020-11-12
US20200357952A1
Electricity

Bonding methods for light emitting diodes

#20 | 2020-10-01
US20200313036A1
Electricity

Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes

#21 | 2020-09-17
US20200292851A1
Physics

Waveguide with coherent interference mitigation

#22 | 2020-06-18
US20200194623A1
Electricity

Reduction of surface recombination losses in micro-LEDs

#23 | 2020-06-18
US20200192130A1
Physics

Waveguide with coherent interference mitigation

#24 | 2020-04-23
US20200127159A1
Electricity

Micron-sized light emiting diode designs

#25 | 2020-04-02
US20200105968A1
Electricity

High-efficiency micro-LEDs

#26 | 2019-11-07
US20190341521A1
Electricity

Micron-sized light emitting diode designs

#27 | 2019-10-03
US20190305188A1
Electricity

REDUCTION OF SURFACE RECOMBINATION LOSSES IN MICRO-LEDS

#28 | 2019-10-03
US20190305185A1
Electricity

Reduction of surface recombination losses in micro-LEDs

#29 | 2019-10-03
US20190305183A1
Electricity

High-efficiency micro-LEDs

#30 | 2019-10-03
US20190305181A1
Electricity

Reduction of surface recombination losses in micro-LEDs

#31 | 2019-03-28
US20190097032A1
Electricity

Layer structure for a group-III-nitride normally-off transistor

#32 | 2018-11-15
US20180331187A1
Electricity

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

#33 | 2018-01-11
US20180012985A1
Electricity

Layer structure for a group-III-nitride normally-off transistor

#34 | 2017-12-28
US20170373156A1
Electricity

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

#35 | 2017-03-16
US20170077242A1
Electricity

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

#36 | 2015-12-10
US20150357454A1
Electricity

Layer structure for a group-III-nitride normally-off transistor

#37 | 2015-12-10
US20150357419A1
Electricity

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

#38 | 2015-03-05
US20150063395A1
Electricity

Optoelectronic semiconductor chip

#39 | 2013-02-14
US20130039374A1
Electricity

Semiconductor laser light source

#40 | 2013-01-31
US20130028281A1
Electricity

Optoelectronic semiconductor chip

#41 | 2012-03-01
US20120051380A1
Performing operations; transporting

Edge-emitting semiconductor laser

InventorID:

87991 ⎘