Inventor profile of:

Chul-soo Kim

City:

Springfield, Virginia

Country:

United States

Published Applications:

27

Last publication date:

2021-12-30

Recent patent applications by Kim Chul-soo

Chul-soo Kim from Springfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-12-30
US20210404957A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#2 | 2021-12-23
US20210396670A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#3 | 2021-12-23
US20210396669A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#4 | 2021-12-23
US20210396668A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#5 | 2021-12-23
US20210396667A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#6 | 2021-12-23
US20210396666A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#7 | 2021-12-23
US20210396665A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#8 | 2021-12-23
US20210396664A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#9 | 2021-12-16
US20210389242A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#10 | 2021-12-16
US20210389241A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#11 | 2020-01-16
US20200018701A1
Physics

Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits

#12 | 2019-08-01
US20190237596A1
Electricity

In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers

#13 | 2019-08-01
US20190237595A1
Electricity

In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers

#14 | 2019-08-01
US20190237594A1
Electricity

In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers

#15 | 2019-05-16
US20190148569A1
Electricity

In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers

#16 | 2018-11-15
US20180331237A1
Electricity

In-plane resonant cavity infrared photodetectors with fully depleted absorbers

#17 | 2018-07-26
US20180212080A1
Electricity

In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers

#18 | 2017-12-28
US20170373472A1
Electricity

Weakly index-guided interband cascade lasers with no grown top cladding layer or a thin top cladding layer

#19 | 2017-11-30
US20170345958A1
Electricity

Resonant-cavity infrared photodetectors with fully-depleted absorbers

#20 | 2016-12-08
US20160359298A1
Electricity

Interband cascade lasers with low-fill-factor top contact for reduced loss

#21 | 2015-07-02
US20150188290A1
Electricity

Interband cascade lasers with engineered carrier densities

#22 | 2013-09-19
US20130243020A1
Electricity

Epitaxial-side-down mounted high-power semiconductor lasers

#23 | 2013-01-03
US20130003770A1
Performing operations; transporting

Interband cascade lasers

#24 | 2012-05-24
US20120128018A1
Performing operations; transporting

Interband cascade lasers

#25 | 2012-05-24
US20120127564A1
Performing operations; transporting

High-temperature interband cascade lasers

#26 | 2011-09-08
US20110215705A1
Electricity

MICRO-CHIP PLASMONIC SOURCE

#27 | 2010-04-22
US20100097690A1
Performing operations; transporting

High-temperature interband cascade lasers

InventorID:

8836 ⎘