Inventor profile of:

Nicolas Blasco

City:

Grenoble

Country:

France

Published Applications:

35

Last publication date:

2023-10-19

Recent patent applications by Blasco Nicolas

Nicolas Blasco from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-10-19
US20230331926A1
Chemistry; metallurgy

Silicon-based self-assembling monolayer compositions and surface preparation using the same

#2 | 2023-10-05
US20230311098A1
Performing operations; transporting

THE FORMATION OF CATALYST PT NANODOTS BY PULSED/SEQUENTIAL CVD OR ATOMIC LAYER DEPOSITION

#3 | 2023-08-31
US20230274947A1
Electricity

SELECTIVE THERMAL ETCHING METHODS OF METAL OR METAL-CONTAINING MATERIALS FOR SEMICONDUCTOR MANUFACTURING

#4 | 2023-08-31
US20230272524A1
Chemistry; metallurgy

DEVICES HAVING A RARE EARTH (OXY) FLUORIDE COATING FOR IMPROVED RESISTANCE TO CORROSIVE CHEMICAL ENVIRONMENTS AND METHODS FOR MAKING AND USING THESE DEVICES

#5 | 2023-06-15
US20230183281A1
Chemistry; metallurgy

Low pressure process for synthesis of Pt(PF)involving a soluble intermediate and storage of obtained Pt(PF)

#6 | 2022-11-03
US20220349054A1
Chemistry; metallurgy

SOLID MATERIAL CONTAINER AND SOLID MATERIAL PRODUCT WITH SOLID MATERIAL FILLED IN SOLID MATERIAL CONTAINER

#7 | 2021-09-09
US20210277517A1
Chemistry; metallurgy

Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes

#8 | 2021-08-12
US20210246553A1
Chemistry; metallurgy

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

#9 | 2021-04-22
US20210114894A1
Chemistry; metallurgy

Tungsten pentachloride conditioning and crystalline phase manipulation

#10 | 2021-04-08
US20210101089A1
Performing operations; transporting

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

#11 | 2020-12-31
US20200407228A1
Chemistry; metallurgy

PREPARATION OF SI-H CONTAINING IODOSILANES VIA HALIDE EXCHANGE REACTION

#12 | 2020-09-24
US20200299147A1
Chemistry; metallurgy

Tungsten pentachloride conditioning and crystalline phase manipulation

#13 | 2020-08-06
US20200246494A1
Human necessities

LU-CONTAINING COMPOSITIONS AND METHODS OF PRODUCING THE SAME

#14 | 2020-07-02
US20200208263A1
Chemistry; metallurgy

SOLID MATERIAL CONTAINER AND SOLID MATERIAL PRODUCT WITH SOLID MATERIAL FILLED IN SOLID MATERIAL CONTAINER

#15 | 2019-12-05
US20190368039A1
Chemistry; metallurgy

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

#16 | 2019-11-07
US20190337810A1
Chemistry; metallurgy

Preparation of Si-H containing iodosilanes via halide exchange reaction

#17 | 2019-10-31
US20190330077A1
Chemistry; metallurgy

Tungsten pentachloride conditioning and crystalline phase manipulation

#18 | 2019-01-24
US20190023582A1
Chemistry; metallurgy

Tungsten pentachloride conditioning and crystalline phase manipulation

#19 | 2018-11-15
US20180327913A1
Chemistry; metallurgy

Etching reactants and plasma-free etching processes using the same

#20 | 2018-05-31
US20180151354A1
Electricity

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

#21 | 2018-04-12
US20180099872A1
Chemistry; metallurgy

Preparation of Si—H containing iodosilanes via halide exchange reaction

#22 | 2016-07-07
US20160194755A1
Chemistry; metallurgy

Manganese-containing film forming compositions, their synthesis, and use in film deposition

#23 | 2016-05-12
US20160130699A1
Chemistry; metallurgy

Method for forming cobalt containing films

#24 | 2016-04-28
US20160115588A1
Chemistry; metallurgy

Cobalt-containing film forming compositions, their synthesis, and use in film deposition

#25 | 2016-04-21
US20160108064A1
Chemistry; metallurgy

Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications

#26 | 2014-08-28
US20140242812A1
Electricity

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

#27 | 2013-02-05
US13041154
-

Aluminum implant using new compounds

#28 | 2013-01-01
US13041127
-

High C content molecules for C implant

#29 | 2011-11-10
US20110275215A1
Electricity

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

#30 | 2011-10-06
US20110244681A1
Chemistry; metallurgy

Method of forming a tantalum-containing layer on a substrate

#31 | 2011-08-25
US20110207337A1
Electricity

Method of depositing a metal-containing dielectric film

#32 | 2011-08-11
US20110195574A1
Electricity

Niobium and vanadium organometallic precursors for thin film deposition

#33 | 2010-03-04
US20100055310A1
Chemistry; metallurgy

Use of group V metal containing precursors for a process of depositing a metal containing film

#34 | 2009-12-17
US20090311879A1
Electricity

Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing

#35 | 2009-08-13
US20090203222A1
Electricity

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

InventorID:

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