Inventor profile of:

Eugene A. Fitzgerald

City:

Windham, New Hampshire

Country:

United States

Published Applications:

104

Last publication date:

2022-09-15

Top Assignees for applications by Eugene A. Fitzgerald

The entities that hold a legal rights for patent applications filed by inventor Fitzgerald Eugene A.:

Recent patent applications by Fitzgerald Eugene A.

Eugene A. Fitzgerald from Windham, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-09-15
US20220293820A1
Electricity

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE THEREOF

#2 | 2018-07-12
US20180197954A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#3 | 2017-06-22
US20170179285A1
Electricity

Methods for forming semiconductor device structures

#4 | 2017-04-27
US20170117176A1
Electricity

Methods of forming strained-semiconductor-on-insulator device structures

#5 | 2016-12-29
US20160380145A1
Electricity

METHODS OF FORMING HIGH-EFFICIENCY SOLAR CELL STRUCTURES

#6 | 2016-06-30
US20160190254A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#7 | 2016-01-28
US20160023144A1
Performing operations; transporting

WATER PURIFICATION AND ENHANCEMENT SYSTEMS

#8 | 2015-09-10
US20150255549A1
Electricity

Controlling GaAsP/SiGe interfaces

#9 | 2015-08-27
US20150243788A1
Electricity

Methods for forming semiconductor device structures

#10 | 2015-06-18
US20150166382A1
Chemistry; metallurgy

WATER PURIFICATION AND ENHANCEMENT SYSTEMS

#11 | 2015-05-07
US20150125528A1
Chemistry; metallurgy

CONTROLLED RELEASE APPARATUS AND USES THEREOF

#12 | 2015-04-09
US20150099328A1
Electricity

Monolithic integration of CMOS and non-silicon devices

#13 | 2014-12-25
US20140374327A1
Chemistry; metallurgy

METHOD AND APPARATUS FOR POINT OF USE WATER FILTRATION

#14 | 2014-09-02
US10854556
-

Methods of fabricating contact regions for FET incorporating SiGe

#15 | 2014-08-28
US20140242778A1
Electricity

Methods of forming strained-semiconductor-on-insulator device structures

#16 | 2014-08-07
US20140220755A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#17 | 2014-06-19
US20140166066A1
Electricity

High-efficiency solar-cell arrays with integrated devices and methods for forming them

#18 | 2014-02-20
US20140051230A1
Electricity

Methods for forming semiconductor device structures

#19 | 2013-12-10
US13310856
-

High-efficiency solar-cell arrays with integrated devices and methods for forming them

#20 | 2013-02-14
US20130040433A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#21 | 2012-05-24
US20120125203A1
Performing operations; transporting

Water purification and enhancement systems

#22 | 2012-04-12
US20120086047A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#23 | 2011-12-29
US20110318893A1
Electricity

Methods for forming semiconductor device structures

#24 | 2011-07-21
US20110177681A1
Chemistry; metallurgy

Method of producing high quality relaxed silicon germanium layers

#25 | 2011-06-16
US20110143495A1
Electricity

METHODS OF FORMING HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES

#26 | 2011-06-09
US20110132445A1
Electricity

HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES

#27 | 2011-05-26
US20110124146A1
Electricity

METHODS OF FORMING HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES

#28 | 2011-03-31
US20110073908A1
Electricity

III-V semiconductor device structures

#29 | 2010-09-02
US20100221512A1
Electricity

DIGITAL METAMORPHIC ALLOYS FOR GRADED BUFFERS

#30 | 2010-08-19
US20100206216A1
Chemistry; metallurgy

Method of producing high quality relaxed silicon germanium layers

#31 | 2010-05-13
US20100116942A1
Electricity

HIGH-EFFICIENCY SOLAR CELL STRUCTURES

#32 | 2010-05-13
US20100116329A1
Electricity

METHODS OF FORMING HIGH-EFFICIENCY SOLAR CELL STRUCTURES

#33 | 2010-01-28
US20100022073A1
Electricity

Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS

#34 | 2009-10-01
US20090242935A1
Electricity

Monolithically integrated photodetectors

#35 | 2009-05-07
US20090114902A1
Electricity

Tensile strained GE for electronic and optoelectronic applications

#36 | 2009-03-10
US10774890
-

Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits

#37 | 2008-06-26
US20080149915A1
Electricity

Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission

#38 | 2008-06-05
US20080128751A1
Electricity

Methods for forming III-V semiconductor device structures

#39 | 2008-06-05
US20080128747A1
Electricity

Structure and method for a high-speed semiconductor device having a Ge channel layer

#40 | 2007-12-20
US20070293009A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#41 | 2007-12-20
US20070293003A1
Electricity

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

#42 | 2007-12-04
US10778953
-

FinFET structure and method to make the same

#43 | 2007-11-27
US10173986
-

Structure and method for a high-speed semiconductor device having a Ge channel layer

#44 | 2007-11-01
US20070252223A1
Electricity

Insulated gate devices and method of making same

#45 | 2007-07-31
US10022689
-

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

#46 | 2007-06-05
US10603852
-

Etch stop layer system

#47 | 2007-05-10
US20070105335A1
Electricity

Monolithically integrated silicon and III-V electronics

#48 | 2007-05-10
US20070105274A1
Electricity

Monolithically integrated semiconductor materials and devices

#49 | 2007-05-10
US20070105256A1
Electricity

Monolithically integrated light emitting devices

#50 | 2007-04-12
US20070082470A1
Electricity

Gate technology for strained surface channel and strained buried channel MOSFET devices

#51 | 2007-03-29
US20070072354A1
Electricity

Structures with planar strained layers

#52 | 2007-02-08
US20070032009A1
Electricity

Methods of fabricating semiconductor devices having strained dual channel layers

#53 | 2006-12-14
US20060279829A1
Performing operations; transporting

Electro-absorption modulator device and methods for fabricating the same

#54 | 2006-12-07
US20060275972A1
Electricity

Method of fabricating CMOS inverters and integrated circuits utilizing strained surface channel MOSFETs

#55 | 2006-11-30
US20060266997A1
Electricity

Methods for forming semiconductor structures with differential surface layer thicknesses

#56 | 2006-11-28
US10788741
-

Structures with planar strained layers

#57 | 2006-11-21
US10456926
-

Semiconductor devices having strained dual channel layers

#58 | 2006-11-21
US10164665
-

Dual-channel CMOS transistors with differentially strained channels

#59 | 2006-09-07
US20060197126A1
Electricity

Methods for forming structures including strained-semiconductor-on-insulator devices

#60 | 2006-09-07
US20060197125A1
Electricity

Methods for forming double gate strained-semiconductor-on-insulator device structures

#61 | 2006-09-07
US20060197124A1
Electricity

Double gate strained-semiconductor-on-insulator device structures

#62 | 2006-09-07
US20060197123A1
Electricity

Methods for forming strained-semiconductor-on-insulator bipolar device structures

#63 | 2006-08-24
US20060189109A1
Electricity

Methods of fabricating contact regions for FET incorporating SiGe

#64 | 2006-08-24
US20060186510A1
Electricity

Strained-semiconductor-on-insulator bipolar device structures

#65 | 2006-08-10
US20060174818A1
Chemistry; metallurgy

Method of producing high quality relaxed silicon germanium layers

#66 | 2006-07-25
US10826156
-

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

#67 | 2006-07-11
US10456708
-

Methods of forming strained-semiconductor-on-insulator finFET device structures

#68 | 2006-06-01
US20060113542A1
Electricity

Method for forming low defect density alloy graded layers and structure containing such layers

#69 | 2006-05-09
US10392338
-

Method of producing high quality relaxed silicon germanium layers

#70 | 2006-04-06
US20060073674A1
Electricity

Strained gettering layers for semiconductor processes

#71 | 2006-02-28
US10603712
-

Method for improving hole mobility enhancement in strained silicon p-type MOSFETS

#72 | 2006-02-07
US10456103
-

Strained-semiconductor-on-insulator device structures

#73 | 2006-01-19
US20060011983A1
Electricity

Methods of fabricating strained-channel FET having a dopant supply region

#74 | 2006-01-17
US10632442
-

Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate

#75 | 2005-12-22
US20050280103A1
Electricity

Strained-semiconductor-on-insulator finFET device structures

#76 | 2005-12-22
US20050280081A1
Electricity

Semiconductor devices having bonded interfaces and methods for making the same

#77 | 2005-12-22
US20050280026A1
Electricity

Strained silicon-on-silicon by wafer bonding and layer transfer

#78 | 2005-12-22
US20050279992A1
Electricity

Strained tri-channel layer for semiconductor-based electronic devices

#79 | 2005-12-13
US10216085
-

Dual layer Semiconductor Devices

#80 | 2005-11-29
US9859139
-

Buried channel strained silicon FET using a supply layer created through ion implantation

#81 | 2005-10-06
US20050221550A1
Electricity

Methods of fabricating dual layer semiconductor devices

#82 | 2005-10-06
US20050218453A1
Electricity

Strained-semiconductor-on-insulator device structures with elevated source/drain regions

#83 | 2005-09-29
US20050212061A1
Electricity

Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes

#84 | 2005-09-22
US20050205934A1
Electricity

Strained germanium-on-insulator device structures

#85 | 2005-09-15
US20050202640A1
Electricity

Gate technology for strained surface channel and strained buried channel MOSFET devices

#86 | 2005-09-15
US20050202604A1
Electricity

Method of forming a digitalized semiconductor structure

#87 | 2005-09-15
US20050199954A1
Electricity

Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain

#88 | 2005-09-06
US10116559
-

Semiconductor device structure

#89 | 2005-09-01
US20050189563A1
Electricity

Strained-semiconductor-on-insulator device structures

#90 | 2005-08-09
US10603850
-

Coplanar integration of lattice-mismatched semiconductor with silicon via wafer bonding virtual substrates

#91 | 2005-07-26
US10802185
-

Process for producing semiconductor article using graded epitaxial growth

#92 | 2005-07-21
US20050156246A1
Electricity

Methods of forming strained-semiconductor-on-insulator device structures

#93 | 2005-07-14
US20050151164A1
Electricity

Enhancement of p-type metal-oxide-semiconductor field effect transistors

#94 | 2005-07-12
US10177571
-

Enhancement of P-type metal-oxide-semiconductor field effect transistors

#95 | 2005-06-23
US20050136624A1
Electricity

Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers

#96 | 2005-05-31
US9906533
-

Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits

#97 | 2005-05-19
US20050106850A1
Electricity

Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETs

#98 | 2005-04-19
US10611739
-

Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS

#99 | 2005-04-14
US20050077511A1
Electricity

Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits

#100 | 2005-04-05
US9611024
-

Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization

InventorID:

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