Windham, New Hampshire
United States
104
2022-09-15
The entities that hold a legal rights for patent applications filed by inventor Fitzgerald Eugene A.:
Eugene A. Fitzgerald from Windham, US has applied for patents for these inventions. The list has both pending applications and granted patents:
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE THEREOF
#2 | 2018-07-12Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#3 | 2017-06-22Methods for forming semiconductor device structures
#4 | 2017-04-27Methods of forming strained-semiconductor-on-insulator device structures
#5 | 2016-12-29METHODS OF FORMING HIGH-EFFICIENCY SOLAR CELL STRUCTURES
#6 | 2016-06-30Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#7 | 2016-01-28WATER PURIFICATION AND ENHANCEMENT SYSTEMS
#8 | 2015-09-10Controlling GaAsP/SiGe interfaces
#9 | 2015-08-27Methods for forming semiconductor device structures
#10 | 2015-06-18WATER PURIFICATION AND ENHANCEMENT SYSTEMS
#11 | 2015-05-07CONTROLLED RELEASE APPARATUS AND USES THEREOF
#12 | 2015-04-09Monolithic integration of CMOS and non-silicon devices
#13 | 2014-12-25METHOD AND APPARATUS FOR POINT OF USE WATER FILTRATION
#14 | 2014-09-02Methods of fabricating contact regions for FET incorporating SiGe
#15 | 2014-08-28Methods of forming strained-semiconductor-on-insulator device structures
#16 | 2014-08-07Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#17 | 2014-06-19High-efficiency solar-cell arrays with integrated devices and methods for forming them
#18 | 2014-02-20Methods for forming semiconductor device structures
#19 | 2013-12-10High-efficiency solar-cell arrays with integrated devices and methods for forming them
#20 | 2013-02-14Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#21 | 2012-05-24Water purification and enhancement systems
#22 | 2012-04-12Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#23 | 2011-12-29Methods for forming semiconductor device structures
#24 | 2011-07-21Method of producing high quality relaxed silicon germanium layers
#25 | 2011-06-16METHODS OF FORMING HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES
#26 | 2011-06-09HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES
#27 | 2011-05-26METHODS OF FORMING HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES
#28 | 2011-03-31III-V semiconductor device structures
#29 | 2010-09-02DIGITAL METAMORPHIC ALLOYS FOR GRADED BUFFERS
#30 | 2010-08-19Method of producing high quality relaxed silicon germanium layers
#31 | 2010-05-13HIGH-EFFICIENCY SOLAR CELL STRUCTURES
#32 | 2010-05-13METHODS OF FORMING HIGH-EFFICIENCY SOLAR CELL STRUCTURES
#33 | 2010-01-28Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETS
#34 | 2009-10-01Monolithically integrated photodetectors
#35 | 2009-05-07Tensile strained GE for electronic and optoelectronic applications
#36 | 2009-03-10Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
#37 | 2008-06-26Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
#38 | 2008-06-05Methods for forming III-V semiconductor device structures
#39 | 2008-06-05Structure and method for a high-speed semiconductor device having a Ge channel layer
#40 | 2007-12-20Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#41 | 2007-12-20Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
#42 | 2007-12-04FinFET structure and method to make the same
#43 | 2007-11-27Structure and method for a high-speed semiconductor device having a Ge channel layer
#44 | 2007-11-01Insulated gate devices and method of making same
#45 | 2007-07-31Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
#46 | 2007-06-05Etch stop layer system
#47 | 2007-05-10Monolithically integrated silicon and III-V electronics
#48 | 2007-05-10Monolithically integrated semiconductor materials and devices
#49 | 2007-05-10Monolithically integrated light emitting devices
#50 | 2007-04-12Gate technology for strained surface channel and strained buried channel MOSFET devices
#51 | 2007-03-29Structures with planar strained layers
#52 | 2007-02-08Methods of fabricating semiconductor devices having strained dual channel layers
#53 | 2006-12-14Electro-absorption modulator device and methods for fabricating the same
#54 | 2006-12-07Method of fabricating CMOS inverters and integrated circuits utilizing strained surface channel MOSFETs
#55 | 2006-11-30Methods for forming semiconductor structures with differential surface layer thicknesses
#56 | 2006-11-28Structures with planar strained layers
#57 | 2006-11-21Semiconductor devices having strained dual channel layers
#58 | 2006-11-21Dual-channel CMOS transistors with differentially strained channels
#59 | 2006-09-07Methods for forming structures including strained-semiconductor-on-insulator devices
#60 | 2006-09-07Methods for forming double gate strained-semiconductor-on-insulator device structures
#61 | 2006-09-07Double gate strained-semiconductor-on-insulator device structures
#62 | 2006-09-07Methods for forming strained-semiconductor-on-insulator bipolar device structures
#63 | 2006-08-24Methods of fabricating contact regions for FET incorporating SiGe
#64 | 2006-08-24Strained-semiconductor-on-insulator bipolar device structures
#65 | 2006-08-10Method of producing high quality relaxed silicon germanium layers
#66 | 2006-07-25Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
#67 | 2006-07-11Methods of forming strained-semiconductor-on-insulator finFET device structures
#68 | 2006-06-01Method for forming low defect density alloy graded layers and structure containing such layers
#69 | 2006-05-09Method of producing high quality relaxed silicon germanium layers
#70 | 2006-04-06Strained gettering layers for semiconductor processes
#71 | 2006-02-28Method for improving hole mobility enhancement in strained silicon p-type MOSFETS
#72 | 2006-02-07Strained-semiconductor-on-insulator device structures
#73 | 2006-01-19Methods of fabricating strained-channel FET having a dopant supply region
#74 | 2006-01-17Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate
#75 | 2005-12-22Strained-semiconductor-on-insulator finFET device structures
#76 | 2005-12-22Semiconductor devices having bonded interfaces and methods for making the same
#77 | 2005-12-22Strained silicon-on-silicon by wafer bonding and layer transfer
#78 | 2005-12-22Strained tri-channel layer for semiconductor-based electronic devices
#79 | 2005-12-13Dual layer Semiconductor Devices
#80 | 2005-11-29Buried channel strained silicon FET using a supply layer created through ion implantation
#81 | 2005-10-06Methods of fabricating dual layer semiconductor devices
#82 | 2005-10-06Strained-semiconductor-on-insulator device structures with elevated source/drain regions
#83 | 2005-09-29Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
#84 | 2005-09-22Strained germanium-on-insulator device structures
#85 | 2005-09-15Gate technology for strained surface channel and strained buried channel MOSFET devices
#86 | 2005-09-15Method of forming a digitalized semiconductor structure
#87 | 2005-09-15Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
#88 | 2005-09-06Semiconductor device structure
#89 | 2005-09-01Strained-semiconductor-on-insulator device structures
#90 | 2005-08-09Coplanar integration of lattice-mismatched semiconductor with silicon via wafer bonding virtual substrates
#91 | 2005-07-26Process for producing semiconductor article using graded epitaxial growth
#92 | 2005-07-21Methods of forming strained-semiconductor-on-insulator device structures
#93 | 2005-07-14Enhancement of p-type metal-oxide-semiconductor field effect transistors
#94 | 2005-07-12Enhancement of P-type metal-oxide-semiconductor field effect transistors
#95 | 2005-06-23Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers
#96 | 2005-05-31Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
#97 | 2005-05-19Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETs
#98 | 2005-04-19Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS
#99 | 2005-04-14Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
#100 | 2005-04-05Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
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