Tainan
Taiwan
136
2025-11-13
The entities that hold a legal rights for patent applications filed by inventor Wang Ching-Chun:
Ching-Chun Wang from Tainan, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
VERTICAL GATE FIELD EFFECT TRANSISTOR
#2 | 2025-11-13Structure and Method for Backside-Illuminated Image Device
#3 | 2025-06-12METAL-INSULATOR-METAL DEVICE CAPACITANCE ENHANCEMENT
#4 | 2025-05-29MULTI-LAYER TRENCH CAPACITOR STRUCTURE
#5 | 2024-10-24HYBRID BONDING TECHNOLOGY FOR STACKING INTEGRATED CIRCUITS
#6 | 2024-06-20VERTICAL GATE FIELD EFFECT TRANSISTOR
#7 | 2024-05-16BOND PAD STRUCTURE FOR BONDING IMPROVEMENT
#8 | 2024-05-09Multi-layer trench capacitor structure
#9 | 2024-05-02SUBSTRATE CONTACT IN WAFER BACKSIDE
#10 | 2024-04-18CRUCIFORM BONDING STRUCTURE FOR 3D-IC
#11 | 2023-11-09Hybrid bond pad structure
#12 | 2023-10-19Extra doped region for back-side deep trench isolation
#13 | 2023-10-05Structure and Method for Backside-Illuminated Image Device
#14 | 2023-09-28Metal-insulator-metal device capacitance enhancement
#15 | 2023-02-02Multi-layer trench capacitor structure
#16 | 2022-12-01Multiple deep trench isolation (MDTI) structure for CMOS image sensor
#17 | 2022-11-03Vertical gate field effect transistor
#18 | 2022-08-18Hybrid bonding technology for stacking integrated circuits
#19 | 2022-08-11Pad structure for front side illuminated image sensor
#20 | 2022-05-19Bond pad structure for bonding improvement
#21 | 2022-02-24Extra doped region for back-side deep trench isolation
#22 | 2021-10-28Apparatus for reducing optical cross-talk in image sensors
#23 | 2021-10-07Metal reflector grounding for noise reduction in light detector
#24 | 2021-09-16Hybrid bond pad structure
#25 | 2021-07-08Vertical gate field effect transistor
#26 | 2021-05-20Metal reflector grounding for noise reduction in light detector
#27 | 2021-01-28Pad structure for front side illuminated image sensor
#28 | 2021-01-21Semiconductor structure and method for manufacturing the same
#29 | 2020-10-29Multiple deep trench isolation (MDTI) structure for CMOS image sensor
#30 | 2020-10-22Semiconductor structure and manufacturing method for the same
#31 | 2020-10-01Hybrid bonding technology for stacking integrated circuits
#32 | 2020-09-24Hybrid bonding technology for stacking integrated circuits
#33 | 2020-07-30Manufacturing method of image sensing device
#34 | 2020-05-14Bond pad structure for bonding improvement
#35 | 2020-04-30Via support structure under pad areas for BSI bondability improvement
#36 | 2020-04-23Apparatus for reducing optical cross-talk in image sensors
#37 | 2020-02-27Extra doped region for back-side deep trench isolation
#38 | 2020-02-20Multiple deep trench isolation (MDTI) structure for CMOS image sensor
#39 | 2020-02-20Multiple deep trench isolation (MDTI) structure for CMOS image sensor
#40 | 2020-02-20Hybrid bonding technology for stacking integrated circuits
#41 | 2020-01-23Inductor structure for integrated circuit
#42 | 2020-01-23Inductor structure for integrated circuit
#43 | 2020-01-09Semiconductor device structure and method for forming the same
#44 | 2019-08-15Image sensor comprising reflective guide layer and method of forming the same
#45 | 2019-07-18Hybrid bond pad structure
#46 | 2019-07-11Extra doped region for back-side deep trench isolation
#47 | 2019-05-30Multiple deep trench isolation (MDTI) structure for CMOS image sensor
#48 | 2019-05-16Semiconductor structure and manufacturing method for the same
#49 | 2019-04-25Inductor structure for integrated circuit
#50 | 2019-04-11Semiconductor structure and method for manufacturing the same
#51 | 2019-02-21Via support structure under pad areas for BSI bondability improvement
#52 | 2018-12-25Semiconductor structure and manufacturing method for the same
#53 | 2018-12-06Via support structure under pad areas for BSI bondability improvement
#54 | 2018-12-06Bond pad structure for bonding improvement
#55 | 2018-11-29Metal block and bond pad structure
#56 | 2018-11-15Pad structure for front side illuminated image sensor
#57 | 2018-10-18Image sensing device and manufacturing method thereof
#58 | 2018-09-27Semiconductor structure and method for manufacturing the same
#59 | 2018-08-30Apparatus for reducing optical cross-talk in image sensors
#60 | 2018-08-23Image sensor device and manufacturing method thereof
#61 | 2018-07-19Extra doped region for back-side deep trench isolation
#62 | 2018-07-12Image sensor with reduced optical path
#63 | 2018-06-07Image sensing device
#64 | 2018-05-31Image sensor pickup region layout
#65 | 2018-05-31Semiconductor device structure and method for forming the same
#66 | 2018-01-25Back-side illuminated (BSI) image sensor with global shutter scheme
#67 | 2017-10-26Method for reducing optical cross-talk in image sensors
#68 | 2017-10-26Image sensor comprising reflective guide layer and method of forming the same
#69 | 2017-10-263DIC structure and method for hybrid bonding semiconductor wafers
#70 | 2017-10-19CMOS image sensor structure with IR/NIR integration
#71 | 2017-10-19Deep trench isolation fabrication for BSI image sensor
#72 | 2017-10-05Hybrid bond pad structure
#73 | 2017-08-24Backside illuminated image sensor with negatively charged layer
#74 | 2017-08-10Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
#75 | 2017-08-03Metal block and bond pad structure
#76 | 2017-07-20Biased backside illuminated sensor shield structure
#77 | 2017-07-20Method for forming alignment marks and structure of same
#78 | 2017-06-29Via support structure under pad areas for BSI bondability improvement
#79 | 2017-06-29Stacked SPAD image sensor
#80 | 2017-06-13Backside illuminated image sensor device
#81 | 2017-05-303DIC structure and method for hybrid bonding semiconductor wafers
#82 | 2017-05-11Deep trench isolation fabrication for BSI image sensor
#83 | 2017-04-27Pad structure for front side illuminated image sensor
#84 | 2017-04-27Back-side illuminated (BSI) image sensor with global shutter scheme
#85 | 2017-04-27Extra doped region for back-side deep trench isolation
#86 | 2017-02-16Semiconductor device structure and method for forming the same
#87 | 2017-02-09Apparatus and method for reducing optical cross-talk in image sensors
#88 | 2017-02-02Image sensor and method for manufacturing the same
#89 | 2017-01-26Hybrid bond using a copper alloy for yield improvement
#90 | 2016-12-29Bond pad structure for bonding improvement
#91 | 2016-12-29Hybrid bond pad structure
#92 | 2016-12-15Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes
#93 | 2016-12-08Image sensor with reduced optical path
#94 | 2016-11-03Image sensor pickup region layout
#95 | 2016-09-22Method for forming alignment marks and structure of same
#96 | 2016-09-08Image sensor comprising reflective guide layer and method of forming the same
#97 | 2016-07-28Alignment marks in non-STI isolation formation and methods of forming the same
#98 | 2016-06-09CMOS image sensor structure with IR/NIR integration
#99 | 2015-11-19Biased backside illuminated sensor shield structure
#100 | 2015-11-05Bonding structures and methods of forming the same
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