Inventor profile of:

Rode R. Mora

City:

Austin, Texas

Country:

United States

Published Applications:

16

Last publication date:

2014-10-09

Top Assignees for applications by Rode R. Mora

The entities that hold a legal rights for patent applications filed by inventor Mora Rode R.:

Recent patent applications by Mora Rode R.

Rode R. Mora from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-10-09
US20140299935A1
Electricity

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPACER AND BOTTOM LINER

#2 | 2012-11-01
US20120273889A1
Electricity

Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner

#3 | 2009-10-15
US20090256186A1
Electricity

Split gate non-volatile memory cell

#4 | 2009-04-09
US20090093108A1
Electricity

Semiconductor fabrication process including silicide stringer removal processing

#5 | 2008-10-23
US20080261361A1
Electricity

Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner

#6 | 2008-03-27
US20080076221A1
Electricity

Split gate memory cell method

#7 | 2007-11-22
US20070269969A1
Electricity

Semiconductor structure pattern formation

#8 | 2007-11-15
US20070264839A1
Electricity

Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer

#9 | 2007-10-25
US20070249127A1
Electricity

Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same

#10 | 2007-09-27
US20070224772A1
Electricity

Method for forming a stressor structure

#11 | 2007-08-23
US20070197011A1
Electricity

Method for improving self-aligned silicide extendibility with spacer recess using a stand-alone recess etch integration

#12 | 2007-08-02
US20070178661A1
Electricity

Method of forming a semiconductor isolation trench

#13 | 2007-04-26
US20070093010A1
Electricity

Method of making an inverted-T channel transistor

#14 | 2007-03-15
US20070059911A1
Electricity

Semiconductor fabrication process including silicide stringer removal processing

#15 | 2005-11-10
US20050250287A1
Electricity

Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing

#16 | 2005-05-12
US20050101069A1
Electricity

Confined spacers for double gate transistor semiconductor fabrication process

InventorID:

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