Goleta, California
United States
21
2021-04-08
The entities that hold a legal rights for patent applications filed by inventor Farrell Robert M.:
Robert M. Farrell from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Contact architectures for tunnel junction devices
#2 | 2020-10-22III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
#3 | 2018-05-31Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
#4 | 2016-11-03Monolithic integration of optically pumped III-nitride devices
#5 | 2016-03-17Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
#6 | 2015-12-24High power blue-violet III-nitride semipolar laser diodes
#7 | 2015-09-10Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction
#8 | 2014-10-16METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
#9 | 2012-10-11Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
#10 | 2012-07-19III-NITRIDE FLIP-CHIP SOLAR CELLS
#11 | 2012-05-03TEXTURED III-V SEMICONDUCTOR
#12 | 2011-09-08Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction
#13 | 2011-07-14SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
#14 | 2011-02-24STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES
#15 | 2011-02-10Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
#16 | 2011-01-13STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
#17 | 2010-09-02Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
#18 | 2008-08-21Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
#19 | 2008-08-14Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
#20 | 2007-12-06Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
#21 | 2007-04-26Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
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