Fishkill, New York
United States
18
2020-02-27
The entities that hold a legal rights for patent applications filed by inventor Ke Yue:
Yue Ke from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#2 | 2019-04-18ANGLED BEAM INSPECTION SYSTEM FOR SEMICONDUCTOR DEVICES
#3 | 2018-04-05FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#4 | 2017-04-25Conformal buffer layer in source and drain regions of fin-type transistors
#5 | 2016-09-15Diamond shaped source drain epitaxy with underlying buffer layer
#6 | 2016-07-07FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#7 | 2016-06-23Uniform junction formation in FinFETs
#8 | 2016-06-09EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UNDERLAYER
#9 | 2016-03-31Uniform junction formation in FinFETs
#10 | 2016-03-31Epitaxial growth of material on source/drain regions of FinFET structure
#11 | 2016-02-04FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#12 | 2015-12-31Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs
#13 | 2015-12-31Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs
#14 | 2015-12-17FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions
#15 | 2015-12-03finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth
#16 | 2015-09-24Single crystal source-drain merged by polycrystalline material
#17 | 2015-05-21FINFET structures with fins recessed beneath the gate
#18 | 2014-10-16Self-limiting selective epitaxy process for preventing merger of semiconductor fins
937412 ⎘