Inventor profile of:

Cristina Tringali

City:

Augusta

Country:

Italy

Published Applications:

31

Last publication date:

2026-06-04

Top Assignees for applications by Cristina Tringali

The entities that hold a legal rights for patent applications filed by inventor Tringali Cristina:

Recent patent applications by Tringali Cristina

Cristina Tringali from Augusta, IT has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260156902A1
Electricity

NORMALLY-OFF HEMT DEVICE WITH BIPOLAR OHMIC CONTACTS, AND MANUFACTURING METHOD THEREOF

#2 | 2025-11-27
US20250366136A1
Electricity

NORMALLY-OFF HEMT DEVICE WITH IMPROVED DYNAMIC PERFORMANCES, AND MANUFACTURING METHOD THEREOF

#3 | 2025-07-24
US20250240997A1
Electricity

IMPROVED HEMT DEVICE, IN PARTICULAR DEPLETION MODE DEVICE, AND MANUFACTURING PROCESS THEREOF

#4 | 2025-06-26
US20250212439A1
Electricity

SEMICONDUCTOR DEVICE BASED ON HETEROSTRUCTURE HAVING A BACK CONTACT REGION AND MANUFACTURING PROCESS THEREOF

#5 | 2025-05-01
US20250142928A1
Electricity

BACK BARRIER INTEGRATION SCHEME FOR GAN DEVICES

#6 | 2025-05-01
US20250142864A1
Electricity

IN SITU PLASMA TREATMENT BEFORE AL2O3 DEPOSITION FOR IMPROVED RON

#7 | 2025-05-01
US20250142862A1
Electricity

NORMALLY-ON GAN HEMT INTEGRATION ON MONOLITHIC P-GAN INTEGRATED CIRCUITS

#8 | 2025-03-20
US20250095998A1
Electricity

METHOD FOR MANUFACTURING A GATE TERMINAL OF A HEMT DEVICE, AND HEMT DEVICE

#9 | 2025-01-30
US20250040164A1
Electricity

METHOD FOR MANUFACTURING AN OHMIC CONTACT FOR A HEMT DEVICE

#10 | 2024-12-05
US20240405115A1
Electricity

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCESS THEREOF

#11 | 2024-10-03
US20240332413A1
Electricity

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PROCESS THEREOF

#12 | 2024-09-19
US20240313102A1
Electricity

NORMALLY-OFF HETEROJUNCTION INTEGRATED DEVICE AND METHOD FOR MANUFACTURING AN INTEGRATED DEVICE

#13 | 2024-09-12
US20240304713A1
Electricity

HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS THEREOF

#14 | 2024-09-12
US20240304711A1
Electricity

HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCESS THEREOF

#15 | 2024-09-12
US20240304710A1
Electricity

HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING PROCESS THEREOF

#16 | 2024-08-15
US20240274702A1
Electricity

HEMT TRANSISTOR

#17 | 2024-08-08
US20240266425A1
Electricity

HEMT TRANSISTOR

#18 | 2024-06-13
US20240194763A1
Electricity

HEMT TRANSISTOR

#19 | 2024-05-16
US20240162040A1
Electricity

Manufacturing method of a semiconductor device with efficient edge structure

#20 | 2024-01-18
US20240021718A1
Electricity

HEMT transistor including an improved gate region and related manufacturing process

#21 | 2023-03-30
US20230099610A1
Electricity

Manufacturing method of a semiconductor device with efficient edge structure

#22 | 2022-06-23
US20220199846A1
Electricity

Photovoltaic cell

#23 | 2021-08-12
US20210249268A1
Electricity

Manufacturing method of a semiconductor device with efficient edge structure

#24 | 2021-04-29
US20210125834A1
Electricity

Method for manufacturing a gate terminal of a HEMT device, and HEMT device

#25 | 2020-06-18
US20200194579A1
Electricity

HEMT transistor including an improved gate region and related manufacturing process

#26 | 2020-05-28
US20200168718A1
Electricity

Method for manufacturing an ohmic contact for a HEMT device

#27 | 2019-06-06
US20190172715A1
Electricity

Manufacturing method of a semiconductor device with efficient edge structure

#28 | 2019-03-28
US20190097074A1
Electricity

Photovoltaic cell

#29 | 2016-03-17
US20160079453A1
Electricity

THIN REFRACTORY METAL LAYER USED AS CONTACT BARRIER TO IMPROVE THE PERFORMANCE OF THIN-FILM SOLAR CELLS

#30 | 2015-10-22
US20150303264A1
Electricity

Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained

#31 | 2014-10-30
US20140319655A1
Electricity

Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained

InventorID:

950221 ⎘