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Inventor profile of:

Jun Hirabayashi

City:

Tokyo

Country:

Japan

Published Applications:

28

Last publication date:

2026-01-08

Top Assignees for applications by Jun Hirabayashi

The entities that hold a legal rights for patent applications filed by inventor Hirabayashi Jun:

TDK CORPORATION 18 Tokyo, Japan
Tamura Corporation 5 Tokyo, Japan
NOVEL CRYSTAL TECHNOLOGY, INC. 5 Saitama, Japan
National Institute of Advanced Industrial Science and Technology 1 Tokyo, Japan

Recent patent applications by Hirabayashi Jun

Jun Hirabayashi from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-08

US20260013157A1

SCHOTTKY BARRIER DIODE

#2 | 2026-01-01

US20260006809A1

JUNCTION BARRIER SCHOTTKY DIODE

#3 | 2025-11-20

US20250359097A1

SCHOTTKY BARRIER DIODE

#4 | 2025-05-29

US20250176199A1

SCHOTTKY BARRIER DIODE

#5 | 2025-03-06

US20250081485A1

JUNCTION BARRIER SCHOTTKY DIODE

#6 | 2025-01-09

US20250015201A1

JUNCTION BARRIER SCHOTTKY DIODE

#7 | 2025-01-02

US20250003110A1

Chemistry; metallurgy

CRUCIBLE, CRYSTAL PRODUCTION METHOD, AND SINGLE CRYSTAL

#8 | 2024-09-19

US20240313130A1

JUNCTION BARRIER SCHOTTKY DIODE

#9 | 2024-09-19

US20240313129A1

SCHOTTKY BARRIER DIODE

#10 | 2024-05-23

US20240170335A1

GALLIUM OXIDE SUBSTRATE DIVISION METHOD

#11 | 2024-02-29

US20240072179A1

SCHOTTKY BARRIER DIODE

#12 | 2024-02-15

US20240055536A1

SCHOTTKY BARRIER DIODE

#13 | 2023-11-02

US20230352601A1

SCHOTTKY BARRIER DIODE

#14 | 2023-04-13

US20230113129A1

Schottky barrier diode

#15 | 2023-02-09

US20230039171A1

SCHOTTKY BARRIER DIODE

#16 | 2022-09-29

US20220307157A1

Chemistry; metallurgy

Crystal manufacturing method, crystal manufacturing apparatus and single crystal

#17 | 2022-02-24

US20220056611A1

Chemistry; metallurgy

Single-crystal growing crucible, single-crystal production method and single crystal

#18 | 2021-11-04

US20210343880A1

Schottky barrier diode

#19 | 2021-11-04

US20210343879A1

Schottky barrier diode

#20 | 2021-06-10

US20210172982A1

Current sensor

#21 | 2021-06-03

US20210167225A1

Schottky barrier diode

#22 | 2021-04-22

US20210119062A1

Schottky barrier diode

#23 | 2021-01-21

US20210020789A1

Trench MOS schottky diode and method for producing same

#24 | 2021-01-21

US20210017668A1

Chemistry; metallurgy

Die for EFG-based single crystal growth, EFG-based single crystal growth method, and EFG single crystal

#25 | 2020-09-10

US20200287060A1

Schottky barrier diode

#26 | 2020-04-09

US20200111882A1

Semiconductor device

#27 | 2020-02-20

US20200058804A1

Schottky barrier diode and electronic circuit provided with same

#28 | 2014-10-30

US20140323324A1

Method for Enrichment and Separation of Spinal Fluid Glycoprotein, Method for Searching for Marker for Central Nervous System Diseases Which Utilizes the Aforementioned Method, and Marker for Central Nervous System Diseases

InventorID:

954087 ⎘