Inventor profile of:

Bryan Hendrix

City:

Danbury, Connecticut

Country:

United States

Published Applications:

18

Last publication date:

2025-10-02

Top Assignees for applications by Bryan Hendrix

The entities that hold a legal rights for patent applications filed by inventor Hendrix Bryan:

Recent patent applications by Hendrix Bryan

Bryan Hendrix from Danbury, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-10-02
US20250305122A1
Chemistry; metallurgy

COATED CONDUITS, RELATED SYSTEMS AND RELATED METHODS

#2 | 2025-01-16
US20250020282A1
Mechanical engineering

DIFFUSERS IN VAPORIZERS AND RELATED METHODS

#3 | 2024-04-18
US20240123391A1
Performing operations; transporting

TUNGSTEN PRECURSORS AND RELATED METHODS

#4 | 2024-04-11
US20240116774A1
Chemistry; metallurgy

TUNGSTEN PRECURSORS AND RELATED METHODS

#5 | 2023-04-27
US20230130079A1
Chemistry; metallurgy

HIGH VAPOR PRESSURE DELIVERY SYSTEM

#6 | 2015-11-05
US20150315215A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#7 | 2014-11-06
US20140329011A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#8 | 2012-07-12
US20120178267A1
Electricity

COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE

#9 | 2011-06-09
US20110136343A1
Electricity

Composition and method for low temperature deposition of silicon-containing films

#10 | 2010-12-16
US20100314590A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#11 | 2010-11-11
US20100285663A1
Electricity

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

#12 | 2010-09-02
US20100221914A1
Electricity

Composition and method for low temperature deposition of silicon-containing films

#13 | 2009-11-12
US20090281344A1
Electricity

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

#14 | 2009-05-12
US10294431
-

Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride

#15 | 2009-04-02
US20090084288A1
Electricity

Composition and method for low temperature deposition of silicon-containing films

#16 | 2008-11-04
US10699079
-

Composition and method for low temperature deposition of silicon-containing films

#17 | 2008-05-13
US10795529
-

Gas sensor with attenuated drift characteristic

#18 | 2005-04-14
US20050080286A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

InventorID:

960701 ⎘