Inventor profile of:

Jeffrey Roeder

City:

Brookfield, Connecticut

Country:

United States

Published Applications:

8

Last publication date:

2015-11-05

Top Assignees for applications by Jeffrey Roeder

The entities that hold a legal rights for patent applications filed by inventor Roeder Jeffrey:

Recent patent applications by Roeder Jeffrey

Jeffrey Roeder from Brookfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-11-05
US20150315215A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#2 | 2014-11-06
US20140329011A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#3 | 2012-07-12
US20120178267A1
Electricity

COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE

#4 | 2010-12-16
US20100314590A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

#5 | 2010-11-11
US20100285663A1
Electricity

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

#6 | 2009-11-12
US20090281344A1
Electricity

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

#7 | 2009-05-12
US10294431
-

Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride

#8 | 2005-04-14
US20050080286A1
Chemistry; metallurgy

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

InventorID:

960702 ⎘