Sunnyvale, California
United States
22
2014-10-16
The entities that hold a legal rights for patent applications filed by inventor Kula Witold:
Witold Kula from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetic tunnel junction for MRAM applications
#2 | 2014-04-10Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
#3 | 2014-03-20Storage element for STT MRAM applications
#4 | 2014-03-13Methods of forming magnetic memory cells
#5 | 2014-02-06Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
#6 | 2013-12-19Memory cells, semiconductor device structures, memory systems, and methods of fabrication
#7 | 2013-12-19Memory cells, semiconductor device structures, memory systems, and methods of fabrication
#8 | 2013-12-19MTJ element for STT MRAM
#9 | 2013-11-14Magnetic tunnel junction for MRAM applications
#10 | 2013-10-17Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
#11 | 2013-09-19STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain
#12 | 2013-09-05High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications
#13 | 2013-08-29High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
#14 | 2013-02-21Magnetic tunnel junction for MRAM applications
#15 | 2012-11-15Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#16 | 2012-11-08Composite free layer within magnetic tunnel junction for MRAM applications
#17 | 2012-11-08Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications
#18 | 2012-08-16Magnetic element with improved out-of-plane anisotropy for spintronic applications
#19 | 2012-07-19Magnetic tunnel junction for MRAM applications
#20 | 2012-02-02Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices
#21 | 2011-01-20Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
#22 | 2010-12-16Spin torque transfer MRAM design with low switching current
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