San Jose, California
United States
53
2017-12-28
The entities that hold a legal rights for patent applications filed by inventor Calafut Daniel:
Daniel Calafut from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#2 | 2016-10-13MOSFET with integrated schottky diode
#3 | 2016-06-30Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#4 | 2016-04-07Dual oxide trench gate power MOSFET using oxide filled trench
#5 | 2016-03-03High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
#6 | 2015-12-31Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
#7 | 2015-11-19Semiconductor device with termination structure for power MOSFET applications
#8 | 2015-10-01Normally on high voltage switch
#9 | 2015-07-09Trench-based power semiconductor devices with increased breakdown voltage characteristics
#10 | 2015-06-25Method for forming dual oxide trench gate power MOSFET using oxide filled trench
#11 | 2015-05-28High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
#12 | 2015-01-22Normally on high voltage switch
#13 | 2015-01-01Trench MOSFET with integrated Schottky barrier diode
#14 | 2014-12-25MOSFET with integrated schottky diode
#15 | 2014-11-20Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
#16 | 2014-10-30Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#17 | 2014-09-18Shielded gate trench MOSFET package
#18 | 2014-08-28Termination trench for power MOSFET applications
#19 | 2014-08-19Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
#20 | 2014-07-24FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
#21 | 2014-06-26High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices
#22 | 2014-03-13Method for forming a schottky barrier diode integrated with a trench MOSFET
#23 | 2014-02-27Field effect transistor with gated and non-gated trenches
#24 | 2014-02-13Trench-based power semiconductor devices with increased breakdown voltage characteristics
#25 | 2014-02-13Trench-based power semiconductor devices with increased breakdown voltage characteristics
#26 | 2013-09-26Trench-gate field effect transistor
#27 | 2013-08-08Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#28 | 2013-07-18Field effect transistor with source, heavy body region and shielded gate
#29 | 2013-03-28Trench MOSFET with integrated Schottky barrier diode
#30 | 2013-02-21Shielded gate trench MOSFET package
#31 | 2012-12-20Field effect transistor and schottky diode structures
#32 | 2012-08-02Trench-based power semiconductor devices with increased breakdown voltage characteristics
#33 | 2012-06-21METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE
#34 | 2012-05-03Structure and method for forming trench-gate field effect transistor with source plug
#35 | 2011-12-15Field effect transistor with gated and non-gated trenches
#36 | 2011-07-21Method of forming trench-gate field effect transistors
#37 | 2011-04-21Power device with improved edge termination
#38 | 2010-10-14Trench-gate field effect transistor with channel enhancement region and methods of forming the same
#39 | 2010-10-14Field effect transistor with self-aligned source and heavy body regions and method of manufacturing same
#40 | 2010-06-10Trench-based power semiconductor devices with increased breakdown voltage characteristics
#41 | 2010-06-10Trench-based power semiconductor devices with increased breakdown voltage characteristics
#42 | 2010-02-18Method and structure for forming a shielded gate field effect transistor
#43 | 2009-09-17Trench-Gate Field Effect Transistors and Methods of Forming the Same
#44 | 2009-08-13Power device edge termination having a resistor with one end biased to source voltage
#45 | 2009-07-30Method of forming a shielded gate field effect transistor
#46 | 2009-04-30Method for forming trench gate field effect transistor with recessed mesas using spacers
#47 | 2008-10-23Shielded gate field effect transistor
#48 | 2007-10-04Power device with improved edge termination
#49 | 2007-04-12Trench FET with improved body to gate alignment
#50 | 2006-12-14Charge balance field effect transistor
#51 | 2006-12-07Trench-gate field effect transistors and methods of forming the same
#52 | 2006-11-30Method of forming trench gate field effect transistor with recessed mesas
#53 | 2005-09-15Optimized trench power MOSFET with integrated schottky diode
97197 ⎘