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Inventor profile of:

Jun LIU

City:

Brookfield, Connecticut

Country:

United States

Published Applications:

Last publication date:

2018-10-11

Top Assignees for applications by Jun LIU

The entities that hold a legal rights for patent applications filed by inventor LIU Jun:

ADVANCED TECHNOLOGY MATERIALS, INC. 9 Danbury, CT United States
ENTEGRIS, INC. 5 Billerica, MA United States
Entegris, Inc. 2 Danbury, CT United States
ATMI Taiwan Co., Ltd. 1 Hsin-chu, Taiwan

Recent patent applications by LIU Jun

Jun LIU from Brookfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-10-11

US20180291309A1

Chemistry; metallurgy

Post chemical mechanical polishing formulations and method of use

#2 | 2018-09-06

US20180251712A1

Chemistry; metallurgy

Post chemical mechanical polishing formulations and method of use

#3 | 2018-02-08

US20180037852A1

Chemistry; metallurgy

Post chemical mechanical polishing formulations and method of use

#4 | 2016-12-01

US20160351388A1

Electricity

Non-amine post-CMP compositions and method of use

#5 | 2016-11-24

US20160340620A1

Chemistry; metallurgy

POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE

#6 | 2016-08-18

US20160237385A1

Chemistry; metallurgy

NON-AMINE POST-CMP COMPOSITION AND METHOD OF USE

#7 | 2016-05-05

US20160122696A1

Chemistry; metallurgy

COMPOSITIONS AND METHODS FOR REMOVING CERIA PARTICLES FROM A SURFACE

#8 | 2016-03-17

US20160075971A1

Chemistry; metallurgy

COPPER CLEANING AND PROTECTION FORMULATIONS

#9 | 2016-02-04

US20160032221A1

Chemistry; metallurgy

COPPER CLEANING AND PROTECTION FORMULATIONS

#10 | 2016-01-21

US20160020087A1

Electricity

Post-CMP removal using compositions and method of use

#11 | 2015-04-30

US20150114429A1

Chemistry; metallurgy

AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT

#12 | 2015-02-12

US20150045277A1

Chemistry; metallurgy

POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE

#13 | 2014-12-04

US20140352739A1

Chemistry; metallurgy

Non-amine post-CMP composition and method of use

#14 | 2012-11-08

US20120283163A1

Chemistry; metallurgy

Copper cleaning and protection formulations

#15 | 2012-02-02

US20120028870A1

Chemistry; metallurgy

Non-amine post-CMP composition and method of use

#16 | 2010-03-18

US20100065530A1

Electricity

COMPOSITION AND PROCESS FOR THE SELECTIVE REMOVE OF TiSiN

#17 | 2009-05-28

US20090137122A1

Chemistry; metallurgy

Method of passivating chemical mechanical polishing compositions for copper film planarization processes

#18 | 2007-11-27

US10315641

Passivative chemical mechanical polishing composition for copper film planarization

#19 | 2007-08-09

US20070181852A1

Chemistry; metallurgy

PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION

#20 | 2005-12-01

US20050263490A1

Chemistry; metallurgy

Method of passivating chemical mechanical polishing compositions for copper film planarization processes

#21 | 2005-11-17

US20050255693A1

Chemistry; metallurgy

Passivative chemical mechanical polishing composition for copper film planarization

#22 | 2005-10-13

US20050224370A1

Physics

Electrochemical deposition analysis system including high-stability electrode

InventorID:

987180 ⎘