MICHAEL VIOLETTE

APPARATUS HAVING TRANSISTORS WITH RAISED EXTENSION REGIONS AND SEMICONDUCTOR FINS

Capacitor structures and apparatus containing such capacitor structures

Transistors with raised extension regions and semiconductor fins

Methods of forming capacitor structures

Capacitor structures

Apparatus having integrated circuit well structures of vertical and/or retrograde profiles

Methods of forming integrated circuit well structures

Method for fabricating a metal high-k gate stack for a buried recessed access device

Method for fabricating a metal high-k gate stack for a buried recessed access device

Method for fabricating a metal high-k gate stack for a buried recessed access device

Method for fabricating a metal high-k gate stack for a buried recessed access device

Isolation trenches for memory devices

Isolation trenches for memory devices

ANGLED IMPLANT TO IMPROVE HIGH CURRENT OPERATION OF BIPOLAR TRANSISTORS

Angled implant to improve high current operation of bipolar transistors

NAND memory arrays

Isolation trenches for memory devices

NAND memory arrays

NAND memory arrays and methods

Memory cells and select gates of NAND memory arrays

Isolation trenches for memory devices

Isolation trenches for memory devices

Formation of memory cells and select gates of NAND memory arrays

Select lines for NAND memory devices

Method of forming select lines for NAND memory devices

Interconnecting conductive layers of memory devices

Interconnecting conductive layers of memory devices