Inventor profile of:

Rajaram Bhat

City:

Painted Post, New York

Country:

United States

Published Applications:

19

Last publication date:

2013-12-12

Top Assignees for applications by Rajaram Bhat

The entities that hold a legal rights for patent applications filed by inventor Bhat Rajaram:

Recent patent applications by Bhat Rajaram

Rajaram Bhat from Painted Post, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-12-12
US20130329760A1
Electricity

SEMICONDUCTOR LASERS WITH INDIUM CONTAINING CLADDING LAYERS

#2 | 2013-12-05
US20130322481A1
Electricity

LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS

#3 | 2013-02-21
US20130044783A1
Electricity

Hole blocking layers in non-polar and semi-polar green light emitting devices

#4 | 2012-10-04
US20120252191A1
Electricity

GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME

#5 | 2012-09-27
US20120244654A1
Electricity

Enhanced planarity in GaN edge emitting lasers

#6 | 2012-08-23
US20120213240A1
Performing operations; transporting

Strain balanced laser diode

#7 | 2012-03-22
US20120069863A1
Electricity

Group III nitride-based green-laser diodes and waveguide structures thereof

#8 | 2011-12-01
US20110292958A1
Electricity

Enhanced planarity in GaN edge emitting lasers

#9 | 2011-12-01
US20110292957A1
Electricity

GaN-based laser diodes with misfit dislocations displaced from the active region

#10 | 2011-10-06
US20110243173A1
Electricity

MQW laser structure comprising plural MQW regions

#11 | 2011-06-09
US20110136280A1
Electricity

Growth methodology for light emitting semiconductor devices

#12 | 2011-06-02
US20110128984A1
Electricity

Native green laser semiconductor devices

#13 | 2011-03-03
US20110049469A1
Electricity

Enhanced P-Contacts For Light Emitting Devices

#14 | 2010-06-17
US20100150193A1
Electricity

MQW laser structure comprising plural MQW regions

#15 | 2009-04-23
US20090101924A1
Electricity

Gallium nitride semiconductor device on SOI and process for making same

#16 | 2008-12-04
US20080299691A1
Electricity

GaN lasers on ALN substrates and methods of fabrication

#17 | 2005-11-17
US20050253164A1
Electricity

Tunnel junctions for long-wavelength VCSELs

#18 | 2005-08-23
US10848456
-

Tunnel junctions for long-wavelength VCSELs

#19 | 2005-05-26
US20050112281A1
Chemistry; metallurgy

Growth of dilute nitride compounds

InventorID:

99463 ⎘