Methods and apparatus for resputtering process that improves barrier coverage

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part claiming priority under 35 USC 120 from U.S. patent application Ser. No. 11/588,586 filed Oct. 26, 2006, titled “Resputtering Process for Eliminating Dielectric Damage”, naming Rozbicki et al. as inventors, which is a continuation-in-part claiming priority under 35 USC 120 from U.S. patent application Ser. No. 10/804,353 filed Mar. 18, 2004, titled “Barrier First Method For Single Damascene Trench Applications,” naming Rozbicki et al. as inventors, which is a continuation-in-part claiming priority under 35 USC 120 from U.S. patent application Ser. No. 10/412,562 filed Apr. 11, 2003 (now U.S. Pat. No. 6,764,940), which is a continuation-in-part claiming priority under 35 USC 120 from U.S. patent application Ser. No. 09/965,472 filed Sep. 26, 2001 (now U.S. Pat. No. 6,607,977), which claims benefit of prior U.S. Provisional Application No. 60/275,803 filed Mar. 13, 2001. U.S. Pat. No. 6,764,940 also claims benefit of U.S. Provisional Patent Application No. 60/379,874 filed May 10, 2002. Each of these references is incorporated herein by reference in its entirety for all purposes.

FIELD OF THE INVENTION

The present invention pertains to methods of resputtering layers of material on a partially fabricated integrated circuit. The methods are particularly useful for resputtering diffusion barrier layers and copper seed layers. The methods can also be applied for resputter etch back of other wafer materials, such as conductive lines.

BACKGROUND OF THE INVENTION

Damascene processing is a method for forming metal lines on integrated circuits. It involves formation of inlaid metal lines in trenches and vias formed in a dielectric layer (inter metal dielectric). Damascene processing is often a preferred method because it requires fewer processing steps than other methods and offers a higher yield. It is also particularly well-suited to metals such as copper that cannot be readily patterned by plasma etching. In order to frame the context of this invention, a brief description of a Damascene process for forming a partially fabricated integrated circuit is described below.

A typical Damascene process flow begins with a dielectric into which recessed features have been etched. A diffusion barrier layer, followed by a metal layer are laid upon the dielectric. The metal layer is typically composed of copper or aluminum. The metal layer fills in the recessed features and forms conductive paths for the resulting IC device.

The barrier layer is important because metal ions from the conductive paths may otherwise diffuse into the silicon devise and the dielectric layer. Suitable materials for the diffusion barrier layer include tantalum, tantalum nitride, tungsten, titanium, titanium nitride, and the like. The barrier may be formed by a physical vapor deposition (PVD) process such as sputtering or a chemical vapor deposition (CVD) process. During the deposition process, etching of the diffusion barrier layer may be carried out on certain portions of the substrate to achieve optimal coverage.

Chemical-mechanical planarization (CMP) is employed to eliminate excess metal from the top of the dielectric and to create a flat top surface. CMP also removes the diffusion barrier layer on the field region.

This process can be repeated to create a multilayered IC device.

SUMMARY OF THE INVENTION

The present invention provides methods and apparatus for a resputtering process that improves coverage on a semiconductor substrate having recessed features. The present invention involves resputtering under a pressure sufficient to cause momentum transfer reflection of the resputtered material. The reflection causes some of the resputtered material to be deposited in a recessed feature. Previous techniques for depositing material in recessed features used the material inefficiently. The methods and apparatus described herein conserve deposition material and improve selectivity.

By effectively increasing the concentration or density of plasma and neutral species proximate to the semiconductor substrate, one creates a minor or reflector which reflects a fraction of surface sputtered barrier species back onto the substrate surface to thereby prevent their loss. Of particular importance, some fraction of the barrier sputtered from the field region is reflected into recessed features such as trench and via sidewalls on the substrate surface.

One aspect of the claimed invention pertains to various methods for depositing material on a semiconductor wafer substrate having field regions and recessed features. In one embodiment the method comprises a depositing operation and a resputtering operation. The depositing operation involves depositing a layer of the material on at least a portion of the field regions of the wafer. The depositing operation may comprise sputtering the material using iPVD (ionized PVD). The material being deposited may be diffusion barrier material or copper. The material may comprise at least one of Ta, TaN_x, Ti, TiN_x, W, WN_x, Ru and Co. The resputtering operation involves resputtering at least the layer residing on the field region of the wafer. The resputtering operation is carried out by impinging the layer with high energy particles under a pressure that is sufficient to cause momentum transfer reflection of the resputtered material, so that at least some of the reflected material is deposited in the recessed features of the substrate. The resputtering operation may result in at least about 10%, e.g., at least about 20% of the resputtered material being reflected onto the wafer. The recessed features may comprise vias or trenches, and may be in a low-k dielectric layer.

The resputtering operation may also comprise resputtering material residing in bottom portions of the recessed features of the wafer, wherein such resputtering results in net etching of the material residing in bottom portions of at least some of the recessed features. In this case, where the recessed features comprise a via and/or a trench, the net etching rate in the via bottom may be 1.2 times greater than the net etching rate in the trench bottom. In some embodiments, such resputtering may result in a net deposition in the bottom portions of at least some of the recessed features of the wafer.

Resputtering of the material residing in the bottom portions of the recessed features may also involve etching copper to form an anchor region in a layer of copper residing underneath at least some of the recessed features. The anchors may generally have a smooth rounded profile. In certain embodiments, the anchors may on average be formed at a depth of between about 10 and 600 Å.

The depositing and resputtering operations may be performed in the same process chamber. In one embodiment, the process chamber comprises a hollow cathode magnetron (HCM). The process chamber may comprise a planar magnetron. The depositing and resputtering operations may also be performed in an apparatus that does not have an ICP source.

The depositing and resputtering operations may also be performed in different process chambers. In this situation, resputtering may be performed in an apparatus that does not include a sputter target.

In one embodiment, the resputtering operation comprises redistributing material on the processed semiconductor substrate without substantially depositing additional material originating from a source that is extraneous to the processed semiconductor substrate. In embodiments where additional material is contributed from an extraneous source during resputter, the additional material may be deposited at a rate of less than about 5 Å/sec, where the deposition rate is measured in the field region. The extraneous source of material may be a sputter target or a sputter coil or both.

In some embodiments, the depositing and resputtering operations are repeated at least once. This facilitates precise contouring of the barrier deposited on the feature walls and/or smooth profiling of the anchor. The pressure used in the resputtering operation may be between about 2 and 100 mTorr. In certain embodiments, the pressure may be about 20-60 mTorr. In those embodiments where the depositing and resputtering operations are performed in one chamber, the depositing operation may be performed at a pressure of less than 10 mTorr.

As indicated, some embodiments of the claimed invention pertain to a method of redistributing material on a semiconductor wafer substrate having a field region and recessed features. In one embodiment the method comprises a resputtering operation in which high energy particles bombard a layer of material residing on the field region of the wafer under a pressure that is sufficient to cause momentum transfer reflection of at least some of the resputtered material, so that the resputtered material is deposited in the recessed features of the substrate.

Some embodiments of the claimed invention pertain to an apparatus for depositing material on a semiconductor wafer substrate having a field region and recessed features. In one embodiment, the apparatus comprises a process chamber having a target for sputtering the material onto the semiconductor wafer, a wafer support for holding the wafer in position during deposition of the material, and a controller comprising program instructions for controlling a sputtering operation. The sputtering operation involves sputtering material from a target onto the semiconductor wafer under conditions that coat at least a portion of the field region, resulting in the formation of a layer of the material. The sputtering operation further comprises subsequently resputtering the layer under a pressure that is sufficient to cause momentum transfer reflection of at least some of the resputtered material (typically a significant fraction of the resputtered material), so that the resputtered material is deposited in the recessed features of the substrate.

In some embodiments, the controller may further comprise instructions for generating a plasma comprising ionized material sputtered from the target. The target may comprise a metal for forming a diffusion barrier on the semiconductor wafer. The diffusion barrier may comprise at least one of Ta, TaN_x, Ti, TiN_x, W, WN_x, Ru and Co.

In certain embodiments, the target comprises a metal for forming a seed layer on the semiconductor wafer. In some of these embodiments, the process chamber comprises an HCM. The process chamber may alternatively comprise a planar magnetron. The controller may further comprise program instructions for repeating the sputtering operation at least once. The instructions for resputtering the layer may comprise instructions for operating at a pressure of about 40-60 mTorr.

Some embodiments of the claimed invention pertain to an apparatus that comprises two elements. The first element is a process chamber having a wafer support for holding the wafer in position during resputtering of the material. The second element is a controller comprising program instructions for a resputtering operation. The resputtering operation involves resputtering a layer of material residing in a field region under a pressure that is sufficient to cause momentum transfer reflection of at least some of the resputtered material, so that the reflected resputtered material is deposited in the recessed features of the substrate.

These and other features and advantages of the present invention will be described in more detail below with reference to the associated drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1H show cross sectional depictions of device structures created during a copper dual Damascene fabrication process.

FIG. 2 shows a cross-sectional depiction of a recessed feature illustrating sputtering of the barrier layer from the recessed feature bottom.

FIGS. 3A-3D show cross-sectional depictions of structures created during a conventional resputter process.

FIGS. 4A-4F show cross-sectional depictions of structures created during a low-pressure resputter process as compared to a resputter process where the pressure is sufficiently high to induce momentum transfer reflection of the resputtered material.

FIGS. 5A-5B present process flow diagrams for a method of depositing a diffusion barrier layer and resputtering the barrier under a pressure sufficient to cause momentum transfer reflection of resputtered material into the recessed features of the substrate. Methods involving the use of a process chamber with and without a target are shown.

FIG. 6A is a cross sectional depiction of the hollow cathode magnetron (HCM) apparatus suitable for practicing the current invention.

FIG. 6B is a cross sectional depiction of a planar magnetron suitable for practicing the current invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Introduction

Resputtering is a plasma-based process that results in the etching of material from the wafer surface. Resputtering methods that can be integrated into deposition process flows for diffusion barrier layers are herein described. Such methods involve resputtering material on at least the field regions of the wafer under a sufficiently high level of pressure. The material may be, for example, diffusion barrier material or conductive material, such as copper. Diffusion barrier materials include but are not limited to Ta, TaN, W and Ti. At sufficiently high levels of pressure, some resputtered material, through momentum transfer reflection, is reflected into a recessed feature. Such methods offer several advantages, including more efficient utilization of deposition material and improved selectivity.

These methods can be used in a variety of applications that require deposition of layers on a substrate having recessed features. These methods are particularly suitable for IC fabrication, and will be illustrated in the context of a copper dual Damascene processing. It is understood, that these methods can be used in other processing methods, including single Damascene processing, and can be applied to the deposition, etching and redistribution of a variety of materials.

In order to frame the context of this invention, a brief description of a copper dual Damascene process for forming a partially fabricated integrated circuit is described below. As noted, the invention applies to other fabrication processes including single Damascene processes.

Presented in FIGS. 1A-1H, is a cross sectional depiction of device structures created at various stages of a dual Damascene fabrication process. A cross sectional depiction of a completed structure created by the dual Damascene process is shown in FIG. 1H. Referring to FIG. 1A, an example of a typical substrate, 100, used for dual Damascene fabrication is illustrated. Substrate 100 includes a pre-formed dielectric layer 103 (such as fluorine or carbon doped silicon dioxide or organic-containing low-k material) with etched line paths (trenches and vias) in which a diffusion barrier 105 has been deposited followed by inlaying with copper conductive routes 107. Resputtering methods described herein may be integrated into the depositing of the diffusion layer. Because copper or other mobile conductive material provides the conductive paths of the semiconductor wafer, the underlying silicon devices must be protected from metal and metal ions (e.g., Cu²⁺) that might otherwise diffuse or drift into the silicon. Suitable materials for diffusion barrier 105 include tantalum, tantalum nitride, tungsten, titanium tungsten, titanium nitride, tungsten nitride, cobalt, ruthenium and the like. In a typical process, barrier 105 is formed by a physical vapor deposition (PVD) process such as sputtering, a chemical vapor deposition (CVD) process, or an atomic layer deposition (ALD) process. Typical metals for the conductive routes are aluminum and copper. More frequently, copper serves as the metal in Damascene processes, as depicted in these figures. The resultant partially fabricated integrated circuit 100 is a representative substrate for subsequent Damascene processing, as depicted in FIGS. 1B-1F.

As depicted in FIG. 1B, a diffusion barrier 109 of, e.g., silicon nitride or silicon carbide is deposited to encapsulate conductive routes 107. Next, a first dielectric layer, 111, of a dual Damascene dielectric structure is deposited on diffusion barrier 109. This is followed by deposition of an etch-stop layer 113 (typically composed of silicon nitride or silicon carbide) on the first dielectric layer 111.

The process follows, as depicted in FIG. 1C, where a second dielectric layer 115 of the dual Damascene dielectric structure is deposited in a similar manner to the first dielectric layer 111, onto etch-stop layer 113. Deposition of an antireflective layer 117, e.g., a silicon oxynitride or a nitrogen-free material, follows.

The dual Damascene process continues, as depicted in FIGS. 1D-1E, with etching of vias and trenches in the first and second dielectric layers. First, vias 119 are etched through antireflective layer 117 and the second dielectric layer 115. Standard lithography techniques are used to etch a pattern of these vias. The etching of vias 119 is controlled such that etch-stop layer 113 is not penetrated. As depicted in FIG. 1E, in a subsequent lithography process, antireflective layer 117 is removed and trenches 121 are etched in the second dielectric layer 115; vias 119 are propagated through etch-stop layer 113, first dielectric layer 111, and diffusion barrier 109.

Next, as depicted in FIG. 1F, these newly formed vias and trenches are, as described above, coated with a diffusion barrier 123. As mentioned above, barrier 123 is made of tantalum, or other materials that effectively block diffusion of copper atoms into the dielectric layers. Methods described herein can be used to improve the deposition of the barrier 123.

In some embodiments, after diffusion barrier 123 is deposited, a seed layer of copper is applied (typically a PVD process) to enable subsequent electrofilling of the features with copper inlay in some embodiments. FIG. 1G depicts a copper seed layer 125 deposited on top of the diffusion barrier layer 123. The seed layer should preferably be continuous and should conformally coat the recessed features in order to support an electrofill process. Preferably, thickness of seed layer coverage should not significantly fluctuate depending on its position on the wafer. In some embodiments, it is often desirable to obtain a continuous seed layer that will have substantially the same thickness in the field, on the bottom portions of the recesses and on the sidewalls. Further, various corners within the recesses should be adequately coated by the seed metal. Methods provided herein allow deposition of seed layers with improved coverage, and result in formation of IC devices having increased reliability.

After the seed layer has been deposited, the recesses are electrofilled with copper. During electrodeposition of copper, the seed layer residing on the wafer serves as a cathode with an electrical contact being made at the edge of the wafer. In those cases when the seed layer is very thin, the sheet resistance of the seed layer is usually substantial. Electroplating on a layer with high sheet resistance gives rise to a terminal effect, in which greater amounts of copper are plated in the vicinity of the electrical contact. Terminal effect leads to increased deposition of metal at the wafer edge and to decreased deposition at the wafer center. Such non-uniformity is undesirable, and should be avoided when possible. While in some cases seed layers should be thin to serve their function, in other cases seed layers may contain inadvertently formed thin portions, which may unnecessarily exacerbate the terminal effect. It is therefore important, to avoid deposition of unnecessarily thin seed layers. Methods described herein allow good seed layer coverage in the field, throughout the radius of the wafer, in the recess bottoms, and on the sidewalls, thereby leading to smaller terminal effects during plating.

After copper has been electrodeposited, excess copper is removed from the field by, for example, chemical mechanical polishing (CMP). FIG. 1H shows the completed dual Damascene structure, in which copper conductive routes 127 are inlayed (seed layer not depicted) into the via and trench surfaces over barrier 123.

Copper routes 125 and 107 are now in electrical contact and form conductive pathways, as they are separated only by diffusion barrier 123, which is also somewhat conductive. Traditionally these diffusion barriers are deposited using PVD methods because of the high quality resultant films. When depositing in features with higher aspect ratios such as the narrow vias within modern technologies, PVD methods tend to produce films with poor sidewall coverage and thick bottom coverage. Sidewall coverage, however, can be improved by etching material from the bottom of the via and redistributing it to the sidewalls.

Resputtering

The etch-back of the barrier layer can be accomplished by a technique known as the resputter process. As explained below, resputtering may take place in the same chamber as the PVD, or frequently the iPVD, process and employ similar process conditions. In this process ionic species are directed towards the wafer and upon collision with the wafer surface, resputtering of the wafer material occurs. In certain embodiments, the ions are formed by ionization of the process gas in the iPVD magnetron chamber. In some embodiments, there may be a component of ionized metal in addition to ionized process gas resputtering wafer material. Commonly employed process gases are inert gases such as argon and krypton. The resputtering process is typically carried out at temperatures of up to 500° C. When the provided methods are used for copper seed layer deposition, the temperature typically ranges from about −40 degrees C. to 100 degrees C.). The traditionally used pressure for resputtering is less than 10 mTorr, preferably from 2 to 5 mTorr.

The resputtering process is most often used for resputtering of the diffusion barrier layer, but can also be employed in the etch-back or redistribution of other wafer materials such as conductive metal layers; e.g., copper seed layers. Diffusion barrier materials commonly subjected to resputtering include but are not limited to tantalum, titanium, tungsten, ruthenium, cobalt, solid solutions of these metals and nitrogen and binary nitrides (e.g. TaN_x, TiN_x, WN_x). Copper and copper alloys are also a commonly resputtered material, including copper from underlying metallization layers as produced during anchoring. In the first metallization layer, some underlying tungsten or other interconnect material may also be resputtered.

In high aspect ratio recesses resputter leads to removal of some or all of the barrier layer at the bottom of the recess, while covering the sidewalls of the recess with the resputtered material. This can be advantageous because sidewalls are sometimes insufficiently covered during the basic PVD or iPVD process. FIG. 2 illustrates the resputter process in a high aspect ratio via. A cross-sectional view of the wafer portion is shown. The depicted via lies in the dielectric layer 201, and a diffusion barrier layer 203 covers the dielectric layer both in the field and in the via. Note the significant accumulation of the diffusion barrier material in the bottom of the via 205. During resputter process the energetic ions impinge on the bottom of the via, resulting in the barrier material atoms being sputtered onto the sidewalls 207, as illustrated by the arrows in FIG. 2. The net result of this process is the removal of the material from the bottom of the via and its deposition on the via sidewalls 207.

An important characteristic of iPVD processes and resputtering is the etch rate to deposition rate ratio (E/D). At the E/D ratio of 1 no net deposition or etching is occurring. At the E/D ratio of 0, the process is entirely depositing. At E/D ratios of more than 1 etching predominates, this being characteristic of resputter. Etching is the result of inert gas ions and/or metal ions impinging the wafer surface with sufficient momentum to dislodge material, while deposition is generally the result of inert gas ions bombarding the target and sputtering target material (neutral or ionic) onto the wafer surface.

The E/D ratio is not necessarily the same in different features (or feature depths) of the wafer. For example, the E/D ratio in the field, in the trench, and in the via may have different values. These values usually correlate with the aspect ratio of the feature, being the largest in the highest aspect ratio recesses and decreasing as the aspect ratio decreases. Therefore, it is frequently possible to have net deposition in the field region (E/D<1) and net etch at the via bottom (E/D>1). E/D ratios are not equal due to the difference in deposition rate (D) between field, trench and via. If there's no deposition, then it's believed that E(field)=E(trench)=E(via). While conventionally, the deposition component (D) came from an extrinsic source, such as target and coil, in the provided methods the source of deposition component may include the material sputtered from the wafer itself.

The relative amount of etching versus deposition can be controlled by modulating the power at the target and at the wafer pedestal. For example, to achieve the high E/D ratio needed for resputter, the power at the target is decreased while the power at the wafer pedestal (bias) is increased. This results in higher sputtering rate at the wafer compared to the target. Commonly employed DC target power for the resputter process is 1-8 kW, preferably 1-6 kW. The bias power for resputtering can range from about 100 to about 3000 W, preferably from about 600 to about 1500 W, and even more preferably from about 900 to about 1200 W. Conversely, if the power at the target is increased and the bias at the wafer is decreased or turned off, the target is sputtered at a high rate compared to the wafer, resulting in a high deposition rate. The DC target power used for deposition step ranges from 10 to 60 kW, preferably 20-35 kW, and more preferably 20-30 kW. The bias power during deposition can range from about 0 to about 3000 W, more preferably from about 500 to about 1200 W.

During a conventional resputter, the power at the target and the bias are tuned in such a way as to obtain net etching in desired areas. This translates into an E/D>1 in the bottom of the feature or features where resputtering is desired, e.g. the lowest lying feature on the wafer or in some cases the feature having the highest aspect ratio. Commonly, E/D ratio during resputter can reach values of up to about 1.5.

Even though such modulation can result in net etching in certain parts of the wafer, previous resputter techniques nevertheless have deposition and etching occurring simultaneously. This occurs in part because of the need to achieve net etching in certain portions of the wafer while protecting other portions. Etching, as noted earlier, can be used to remove the diffusion barrier at the bottom of a via, so that a connection can be made with an underlying conductive link. If only etching without any deposition took place, however, other recesses might lose their barrier layers as well, which may be undesirable. Combining the etching and deposition processes makes use of the fact that the E/D ratio differs in different locations of the wafer and helps to limit net etching to desirable areas, such as trench bottoms.

Resputtering in a regime where etching and deposition processes are occurring simultaneously, however, is wasteful of target material. Over 90% of the material deposited on the wafer is lost to the field, where it is later removed by CMP in certain embodiments. Only a very small fraction reaches the recesses. The methods described herein may be used to minimize the deposition component derived from sources extraneous to the wafer. Some embodiments allow for the shifting of barrier material from the field into the recesses. In some embodiments a hardware source of barrier material, such as a target or coil, is unnecessary during resputter, or at least the consumption of the target or coil is greatly reduced.

A conventional resputter process is depicted in FIGS. 3A-3D. Referring to FIG. 3A, a cross-sectional depiction of a wafer substrate is shown. The substrate comprises two layers of dielectric 301, where the top layer is patterned with two recesses, a trench 307, and a via 309. The dielectric 301 may be a low-k dielectric such as carbon doped silicon dioxide, hydrogenated silicon oxycarbide (SiCOH), fluorine doped silicon dioxide, or organic-containing low-k dielectric. Any of these materials may be employed in a porous or non-porous state. A conductive line 303 resides in the underlying dielectric layer directly below the via 309. Together line 303 and its coplanar dielectric and other coplanar lines serve as a metallization layer. Conductive lines are most commonly copper lines. The sides and the bottom of the copper line are coated with a diffusion barrier layer 305, which prevents the diffusion of copper into the dielectric layer 301. Etch-stop and antireflective layers, such as 313 and 317 of FIG. 2B, are not shown for clarity.

The exposed surface of the dielectric layer 301 is subjected to a diffusion barrier deposition step resulting in the structure shown in FIG. 3B. It can be seen that after the deposition step diffusion barrier layer 305 covers the surface of top dielectric layer both in the field and in the recesses. The uniformity of such coverage, however, is low, particularly in the via region. There is significant accumulation of the barrier material in the via bottom 311, and a very thin coverage of the via sidewalls.

Uniformity of the via coverage is improved through the resputter step, which leads to the structure shown in FIG. 3C. In this structure all or a major fraction of the barrier material is resputtered from the via bottom onto the sidewalls exposing the underlying copper line. The desired result of this operation is a better, more uniform coverage of the sidewalls in the via and the trench.

When resputtering is performed further, it etches material of the copper line (after the barrier material is removed) which resides below the via, leading to formation of a cavity in the conductive line, known as an anchor. The structure with an anchor 313 is shown in FIG. 3D. In certain embodiments, the anchor is a desired feature in the fabrication of an IC device which results in mechanically strong and highly conductive pathways when the via is filled with interconnect metal. At the same time, resputtering leads to undesired and unintentional changes in the trench region. The bottom of the trench may be stripped of the barrier layer, and the dielectric may become exposed to the impact of high-energy ions. The erosion of the barrier layer in the trench is an unintended consequence of such resputtering and is considered to be undesirable. For example, microtrenches 315 can form at the bottom corners of recesses when energetic ions of resputtering plasma strike particular regions on the exposed dielectric, e.g., after reflection from recess sidewall. When the diffusion barrier is thinned or removed at a trench bottom, a follow up deposition step is needed to provide some minimal coverage at the via bottom before copper seed can be applied.

Some of the methods described herein can offer increased protection to trenches that would normally be subject to such erosion. FIGS. 4A-4F compare a conventional approach to resputtering with embodiments of the methods described herein. FIG. 4A is a cross-sectional depiction of a wafer substrate. The substrate comprises two layers of a dielectric 401. The top layer contains two recesses, a trench 407 and a via 409. Trench 409 is situated above a conductive line 403 in an underlying metallization layer. A field region 411 constitutes the top surface of the substrate.

FIG. 4B shows the wafer substrate after deposition of a barrier layer 413 in a manner as described above. Note that the operation associated with deposition of layer 413 could deposit, instead of a barrier layer, any conductive metal layer, such as a copper seed layer. In the depicted examples, barrier layer 413 now covers the via 409, the trench 407 and the field 411.

FIG. 4C depicts the wafer substrate after a conventional resputter. The resputter has resulted in a reduction of the barrier layer 413 across the surface of the wafer, including the via 409, the trench 407 and the field 411. The resputtering at the bottom of the via 403 may result in the creation of an anchor 405. The arrows pointing upward indicate that the barrier material on the fields 411 has been lost to the chamber after resputter. It should be noted that the amount of barrier material in trench 407 is greatly reduced, which may be undesirable. Microtrenches such as those depicted in FIG. 3D may also result.

FIG. 4D shows the implementation of one embodiment of the claimed invention. In the depicted embodiment, resputter is taking place under high pressure sufficient to cause momentum transfer reflection of the resputtered material by a high density reflector region 415. As in FIG. 4C, resputtered barrier material is leaving field 411. In contrast to FIG. 4C, however, the resputtered barrier material is being reflected by the reflector 415 toward the via 409 and the trench 407, as demonstrated by the curved arrows.

The reflector 415 is composed of particles in the chamber, which may include neutral and/or ionized process gas and in some embodiments neutral and/or ionized metal atoms, which are densely distributed due to the high pressure. The elliptical shape of the reflector 415 is chosen purely for illustrative purposes and is not meant to convey the spatial boundaries of the particles. Under high pressure, resputtered material with a vertically upward component (away from the substrate surface) has a high probability of colliding with species in the reflector 415 and being reflected back toward the wafer. It is likely that the higher the density of the gas in the chamber proximate the substrate, the greater the extent of the reflection. Other factors may contribute to the extent of the reflection. A mixture of high atomic weight gases, for example, may have a greater reflective effect than any single low atomic weight gas.

The extent of reflection can also be adjusted by configuring the level of pressure. At lower levels of pressure, such as the typical operating pressure of 1-4 mTor, resputtering results in very limited reflection of barrier material and much greater loss of barrier material to the chamber. At much higher levels of pressure, such as 40-60 mTor, much of the resputtered barrier material from the field will be reflected.

Note that the barrier material 413 has collected more heavily in the trench 407 and the via 409 as a result of the reflection. Barrier material that traditionally would have been deposited on the field 411 and wasted in a traditional resputter has been usefully redistributed to the recesses.

The approach embodied in FIG. 4D not only allows for the more efficient use of barrier material, but also may allow for reduced consumption of target metal or even allow for the removal of the source. If sufficient material can be redistributed from the field into the recesses of the wafer, a source and its supporting hardware are no longer necessary at least during the resputter operation. Hence, some embodiments of the resputter operation may be performed in an apparatus that lacks a coil or sputter target. More typically, the power to the coil and/or the sputtering target can be reduced or eliminated.

FIG. 4E demonstrates another embodiment of the claimed invention in which net etching takes places in one recess and net deposition takes place in another recess. The barrier layer 413 at the bottom of the via 409 has been etched so that the bottom of via 409 is made substantially coplanar with conductive line 403. Conventionally, when resputter takes place under low pressure, the trench 407 may lose its barrier layer 413. In this embodiment, which takes place under sufficiently high pressure, the barrier layer 413 of the trench 407 has been reinforced by the reflection of resputtered barrier material from the field 411, as depicted by the curved arrow. FIG. 4E demonstrates how an embodiment of the claimed invention can selectively etch away the barrier layer in some portions of the wafer while reinforcing the layer in other portions.

Embodiments of the methods described herein may improve selectivity in at least two ways. As noted earlier, when resputtering is conducted under sufficiently high pressure, the resputtered material, made up of off angle, neutral flux, is reflected back toward the surface of the wafer. The flux tends to settle more easily in recesses with lower aspect ratios, such as fields and trenches. Resputtering as depicted in FIG. 4E can thus result in less material being removed from the trench bottom (or even in a net deposition in the trench bottom) compared to the net etch of material in the narrower via, which attracts less of the flux.

Moreover, it is believed that the pressure and other conditions in the chamber may be adjusted in such a way as to focus the deposition of reflected resputtered material on parts of the wafer. For example, pressure could be adjusted so as to increase the buildup of reflected barrier material on a recess or a portion of a recess.

FIG. 4F demonstrates another embodiment of the claimed invention in which resputter under high pressure results in the creation of an anchor at the bottom of the via 403. The barrier layer 413 in the trench 407 is again reinforced by the reflection of barrier material from the field 411 into the trench 407. Note the shape of the anchor 405 in FIG. 4F. An advantage of creating anchors under high pressure is that the anchors generally assume a more rounded shape (compared with resputter at lower pressures). Anchors produced under much lower, more conventional pressures have demonstrated a more pointed shape, as depicted by anchor 405 in FIG. 4C. Rounded anchors result in improved connections over anchors that have sharp corners. They are more mechanically robust. In some embodiments, anchors having a depth of between about 10-600 Å, preferably between about 50-400 Å and a rounded profile are obtained. An anchor can be characterized by a ratio of anchor width to anchor height, where width is equal to the via width at the via bottom, and anchor height is measured at the center of the via bottom. Anchors with aspect ratios of greater than about 1 are preferred. The rounded anchors can be cut by repeating between about 1-10 cycles of deposition and high pressure resputter.

One example of a sequence of depositing and resputtering steps is illustrated in FIG. 5A. The steps of FIG. 5A may take place in a chamber with a target. The process starts with the deposition of a barrier sublayer (process block 501). In alternative embodiments, instead of a barrier layer, a copper seed layer may be deposited. In such cases, in the depicted embodiment, references to the barrier layer may be replaced with references to the seed layer. Of course, it is assumed that a barrier layer resides beneath the seed layer. This deposition process may be accomplished by a PVD or iPVD technique but other deposition methods may be also used. These methods may include chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), electroless deposition, selective reduction of an organometallic precursor from a supercritical solution, and the like. An RF-powered coil, a DC-powered target or other types of hardware may be used as the source of barrier material. The deposited material is then resputtered (503) at a pressure high enough to cause momentum transfer reflection of the resputtered material, such that at least some of the material is deposited in the recessed features of the substrate. The pressure may be between 2-100 mTorr, preferably 20-60 mTorr. The process may stop at this point or, if a more uniform or thicker coverage is desired, more material may be deposited (505) by any of the above mentioned methods, and then resputtered again (507). The depositing and resputtering steps may be optionally repeated as many times as necessary (509).

Another example of a sequence of depositing and resputtering steps is illustrated in FIG. 5B. The process starts with the placement of a substrate into a process chamber with a hardware source, such as a coil or target (process block 511). A variety of deposition techniques, conditions, materials and hardware may be used, as was the case with FIG. 5A. Deposition then takes place (process block 513). After the initial deposition, the substrate is transferred to a process chamber that lacks a hardware source (process block 515). The substrate is then resputtered at a pressure sufficient to cause momentum transfer reflection of at least some of the resputtered material into the recessed features of the substrate (process block 517). At high pressures, such as 20-60 mTorr, resputtering leads to the redistribution of material from the field regions to the recesses, thus eliminating the need for the hardware source of secondary material. In some embodiments, one or more additional deposition steps are performed after the material has been redistributed by resputter. For example, in some embodiments, several cycles of deposition and redistribution steps may be performed. In one embodiment, the material may be deposited in an ALD process chamber and may be resputtered using provided chambers in a plasma pre-clean chamber or in a PVD chamber. Subsequently, another depositing operation may be performed, if required.

The processes depicted in FIGS. 5A and 5B serves as an illustration of deposition and resputtering cycles employed to achieve superior coverage and/or selectivity. The present invention is not limited to the process flow schemes shown in FIGS. 5A and 5B, and may include resputtering of all of the barrier layer from the via bottom or punch-through resputter etch into the underlying copper lines. Other steps may be added to the general process flow as necessary.

Apparatus

While the present invention can be practiced in many different types of apparatus, two main types of iPVD apparatus, hollow cathode magnetron (HCM) and planar magnetron, will now be briefly described. Hollow cathode magnetron is an apparatus carrying a three-dimensional sputter target. The present invention is not limited to a specific cup-like geometry of an HCM target and can be used in conjunction with three-dimensional targets of a plurality of shapes.

FIG. 6A presents a cross sectional view of one type of HCM sputtering apparatus that can be used in accordance with the invention. The HCM apparatus has two main components, the source 601, in which a plasma is created and maintained, and the RF bias electrostatic chuck (ESC) pedestal 603, which secures the wafer and applies an RF bias on the wafer, if needed. In this example, the source 601 contains several electromagnets 605a-605c, and a cathode target 607. The cathode target 607 generally has a hollow cup-like shape so that plasma formed in the source can be concentrated within this hollow region. The cathode target 607 also serves as a sputter target and is, therefore, made of a metal material such as tantalum, which is to be deposited onto a substrate.

An inert gas, such as argon, is introduced through a gas inlet 613 into the hollow region of the cathode target 607 powered by a DC source to form a plasma. The pump 615 is positioned to evacuate or partially evacuate the process chamber. The control of pressure in the process chamber can be achieved by using a combination of gas flow rate adjustments and pumping speed adjustments, making use of, for example, a throttle valve or a baffle plate. Alternatively, pressure above the wafer can be controlled by varying the height of the wafer pedestal 603. At an increased pedestal height, at some shield configurations, slower gas flow results in a higher pressure above the wafer. An intense magnetic field is produced by electromagnets 605a-605b within the cathode target region. Additional electromagnets 605c are arranged downstream of the cathode target so that different currents can be applied to each electromagnet, thereby producing an ion flux and a controlled deposition and/or etch rate and uniformity. A floating shield 609, existing in equilibrium with the floating plasma potential, is used, in conjunction with the source electromagnets to shape the plasma distribution at the target mouth. A stream of ions is directed to the surface of the wafer, as shown by arrows on FIG. 6A. The ESC pedestal 603 holds the wafer substrate in place and can apply a RF bias to the wafer substrate. The ion energy, and therefore the deposition and/or etch rate can also be controlled by the pedestal RF bias. An additional function of the ESC pedestal is to provide wafer temperature control during deposition and resputtering. In a typical process the pedestal temperature can vary in the range of about −50-600° C. In practice it is often advantageous to cool the wafer pedestal down to temperatures of about −40-−20° C. while the shields of an apparatus are kept at a higher temperature of about 25-500° C., preferably 100-200° C. Typically, argon or helium backside gas is used to provide thermal coupling between the substrate and the ESC.

In certain embodiments, a system controller 611 is employed to control process conditions during deposition and resputter, insert and remove wafers, etc. The controller will typically include one or more memory devices and one or more processors. The processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.

In certain embodiments, the controller controls all of the activities of the deposition apparatus. The system controller executes system control software including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, RF power levels, wafer chuck or susceptor position, and other parameters of a particular process. Other computer programs stored on memory devices associated with the controller may be employed in some embodiments.

Typically there will be a user interface associated with controller 611. The user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.

The computer program code for controlling the deposition and resputtering processes can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program.

The controller parameters relate to process conditions such as, for example, process gas composition and flow rates, temperature, pressure, plasma conditions such as RF power levels and the low frequency RF frequency, cooling gas pressure, and chamber wall temperature. These parameters are provided to the user in the form of a recipe, and may be entered utilizing the user interface.

Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller. The signals for controlling the process are output on the analog and digital output connections of the deposition apparatus.

The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control operation of the chamber components necessary to carry out the inventive deposition processes. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

A substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target. A process gas control program may include code for controlling gas composition and flow rates and optionally for flowing gas into the chamber prior to deposition in order to stabilize the pressure in the chamber. A pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber. A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck. A plasma control program may include code for setting RF power levels applied to the process electrodes at the target and the wafer chuck.

Examples of chamber sensors that may be monitored during deposition and/or resputtering include mass flow controllers, pressure sensors such as manometers, and thermocouples located in pedestal or chuck. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions.

FIG. 6B shows a schematic representation of a planar magnetron 620 which can also be used to practice present invention. Target 621, a circular, planar block of material to be deposited, is spaced from the wafer 623, which is mounted on a heating stage 625 in chamber 627. A dc power supply 629 is used to apply a dc field to target 621, establishing a plasma in the chamber below target 621. A circular magnet 631 mounted above the target is rotated by motor 633 setting up a magnetic field extending through target 621 into the region between the target 621 and wafer 623. Cryopump 635 connected to chamber 627 via valve 637 is used to evacuate the chamber. Process gas injector 639 is connected to process gas supply 641 via mass flow controller 643. A sputtering gas is introduced into chamber 627 via injectors 639. It is understood that the structure of module 620 is exemplary only. The methods of present invention may be practiced in other types of planar magnetrons, such as ones having ICP sources. However, it should be understood that since planar magnetrons with ICP sources normally operate at higher pressure than HCM, they should be operated at an even higher pressure in order to achieve the benefit of microtrenching reduction. In one embodiment of this invention certain planar magnetrons, such as magnetrons with internal or external ICP sources, are operated at a pressure range of between about 50 and 100 mTorr, preferably between about 60 and 90 mTorr.

Although various details have been omitted for clarity's sake, various design alternatives may be implemented. Therefore, the present examples are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope of the appended claims.