Assignee profile:

DNF CO., LTD.

City:

Daejeon

Country:

South Korea

Published Applications:

39

Last publication date:

2026-03-26

Patent Grants:

29

Last grant date:

2026-02-10

Top Inventors for applications by DNF CO., LTD.

These are the the leading inventors for applications assigned to DNF CO., LTD.:

Recent patent applications by DNF CO., LTD.

DNF CO., LTD. based in Daejeon, KR has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2026-03-26
US20260090364A1
Electricity

METHOD OF MANUFACTURING SACRIFICIAL LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

#2 | 2025-06-05
US20250179627A1
Chemistry; metallurgy

COMPOSITION FOR DEPOSITING A MOLYBDENUM-CONTAINING THIN FILM, METHOD FOR MANUFACTURING A MOLYBDENUM-CONTAINING THIN FILM, AND MOLYBDENUM-CONTAINING THIN FILM MANUFACTURED THEREBY

#3 | 2025-05-22
US20250163081A1
Chemistry; metallurgy

SILICON COMPOUNDS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

#4 | 2025-05-15
US20250157809A1
Electricity

THIN-FILM FORMING COMPOSITION INCLUDING ALUMINUM COMPOUND, METHOD OF FORMING THIN FILM BY USING THE THIN-FILM FORMING COMPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

#5 | 2023-12-21
US20230407051A1
Chemistry; metallurgy

PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

#6 | 2023-12-21
US20230406822A1
Chemistry; metallurgy

SILICON COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

#7 | 2023-09-28
US20230307227A1
Electricity

SILICON PRECURSOR HAVING A HETEROCYCLIC GROUP, COMPOSITION FOR DEPOSITING A SILICON-CONTAINING LAYER COMPRISING THE SAME AND METHOD OF DEPOSITING A SILICON-CONTAINING LAYER USING THE SAME

#8 | 2023-09-28 ✅ Patent 12,546,001 granted on 2026-02-10
US20230304155A1
Chemistry; metallurgy

COMPOSITION FOR DEPOSITING A SILICON-CONTAINING LAYER AND METHOD OF DEPOSITING A SILICON-CONTAINING LAYER USING THE SAME

#9 | 2023-08-10 ✅ Patent 12,384,805 granted on 2025-08-12
US20230250114A1
Chemistry; metallurgy

IODINE-CONTAINING METAL COMPOUND AND COMPOSITION FOR DEPOSITING THIN FILM INCLUDING THE SAME

#10 | 2023-07-06 ✅ Patent 12,459,959 granted on 2025-11-04
US20230212196A1
Chemistry; metallurgy

INDIUM COMPOUND, METHOD OF PRODUCING THE SAME, COMPOSITION FOR DEPOSITING INDIUM-CONTAINING THIN FILM, AND INDIUM-CONTAINING THIN FILM

#11 | 2023-06-29 ✅ Patent 12,473,647 granted on 2025-11-18
US20230203655A1
Chemistry; metallurgy

COMPOSITION FOR DEPOSITING ANTIMONY-CONTAINING THIN FILM AND METHOD FOR MANUFACTURING ANTIMONY-CONTAINING THIN FILM USING THE SAME

#12 | 2023-03-23 ✅ Patent 12,518,963 granted on 2026-01-06
US20230089296A1
Electricity

COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME

#13 | 2022-12-01
US20220380390A1
Chemistry; metallurgy

SILICON COMPOUNDS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

#14 | 2022-09-01 ✅ Patent 12,304,924 granted on 2025-05-20
US20220275010A1
Chemistry; metallurgy

Silylcyclodisilazane compound and method for manufacturing silicon-containing thin film using the same

#15 | 2022-06-09 ✅ Patent 12,398,459 granted on 2025-08-26
US20220181578A1
Electricity

SILICON METAL OXIDE ENCAPSULATION FILM COMPRISING METAL OR METAL OXIDE IN THIN FILM, AND MANUFACTURING METHOD THEREFOR

#16 | 2022-05-05 ✅ Patent 11,749,522 granted on 2023-09-05
US20220139704A1
Electricity

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

#17 | 2022-01-20 ✅ Patent 11,459,653 granted on 2022-10-04
US20220018017A1
Chemistry; metallurgy

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

#18 | 2021-07-22 ✅ Patent 11,447,859 granted on 2022-09-20
US20210222294A1
Chemistry; metallurgy

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

#19 | 2021-05-20 ✅ Patent 11,319,333 granted on 2022-05-03
US20210147451A1
Chemistry; metallurgy

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

#20 | 2020-12-17 ✅ Patent 11,358,974 granted on 2022-06-14
US20200392294A1
Chemistry; metallurgy

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

#21 | 2020-11-19 ✅ Patent 11,390,635 granted on 2022-07-19
US20200361966A1
Chemistry; metallurgy

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

#22 | 2020-10-29 ✅ Patent 11,827,650 granted on 2023-11-28
US20200339617A1
Chemistry; metallurgy

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

#23 | 2020-07-23
US20200231610A1
Chemistry; metallurgy

TIN COMPOUND, TIN PRECURSOR COMPOUND FOR FORMING A TIN-CONTAINING LAYER, AND METHODS OF FORMING A THIN LAYER USING THE SAME

#24 | 2020-04-30 ✅ Patent 10,894,799 granted on 2021-01-19
US20200131205A1
Chemistry; metallurgy

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

#25 | 2020-04-09 ✅ Patent 11,393,676 granted on 2022-07-19
US20200111664A1
Electricity

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

#26 | 2019-10-03 ✅ Patent 11,062,940 granted on 2021-07-13
US20190304835A1
Electricity

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

#27 | 2019-05-16 ✅ Patent 10,882,873 granted on 2021-01-05
US20190144472A1
Chemistry; metallurgy

Method of forming tin-containing material film and method of synthesizing a tin compound

#28 | 2019-05-09 ✅ Patent 10,913,755 granted on 2021-02-09
US20190135840A1
Chemistry; metallurgy

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

#29 | 2019-04-25 ✅ Patent 11,230,492 granted on 2022-01-25
US20190119151A1
Chemistry; metallurgy

Anti-glare glass and manufacturing method therefor

#30 | 2018-06-07
US20180155372A1
Chemistry; metallurgy

TIN COMPOUND, METHOD OF SYNTHESIZING THE SAME, TIN PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION, AND METHOD OF FORMING TIN-CONTAINING MATERIAL FILM

#31 | 2018-04-12 ✅ Patent 10,361,118 granted on 2019-07-23
US20180102284A1
Electricity

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

#32 | 2018-03-15 ✅ Patent 10,224,200 granted on 2019-03-05
US20180076024A1
Electricity

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

#33 | 2017-07-20 ✅ Patent 10,134,583 granted on 2018-11-20
US20170207083A1
Electricity

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

#34 | 2017-05-04 ✅ Patent 9,916,974 granted on 2018-03-13
US20170125243A1
Electricity

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition

#35 | 2016-11-17 ✅ Patent 10,202,407 granted on 2019-02-12
US20160333030A1
Chemistry; metallurgy

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

#36 | 2016-11-10 ✅ Patent 9,809,608 granted on 2017-11-07
US20160326193A1
Chemistry; metallurgy

Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the same

#37 | 2016-07-14 ✅ Patent 10,214,610 granted on 2019-02-26
US20160200853A1
Chemistry; metallurgy

Polymer and composition containing same

#38 | 2016-05-05 ✅ Patent 9,586,979 granted on 2017-03-07
US20160122369A1
Chemistry; metallurgy

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

#39 | 2014-12-11 ✅ Patent 9,245,740 granted on 2016-01-26
US20140363985A1
Electricity

Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same

Also check out DNF CO., LTD.'s (Daejeon, South Korea) applicant profile with 29 patent applications submitted.

AssigneeID:

115653 ⎘