Inventor profile of:

Jaesoon Lim

City:

Seoul

Country:

South Korea

Published Applications:

13

Last publication date:

2023-10-12

Top Assignees for applications by Jaesoon Lim

The entities that hold a legal rights for patent applications filed by inventor Lim Jaesoon:

Recent patent applications by Lim Jaesoon

Jaesoon Lim from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-10-12
US20230328958A1
Electricity

Capacitor and memory device

#2 | 2023-08-17
US20230257409A1
Chemistry; metallurgy

METHOD OF SELECTIVELY FORMING COBALT METAL LAYER BY USING COBALT COMPOUND, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING COBALT COMPOUND

#3 | 2023-07-13
US20230225112A1
Electricity

SEMICONDUCTOR DEVICE

#4 | 2022-03-24
US20220093603A1
Electricity

Capacitor and DRAM device including the same

#5 | 2021-02-11
US20210040130A1
Chemistry; metallurgy

Niobium compound and method of forming thin film

#6 | 2021-02-04
US20210032279A1
Chemistry; metallurgy

METHOD OF SELECTIVELY FORMING COBALT METAL LAYER BY USING COBALT COMPOUND, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING COBALT COMPOUND

#7 | 2020-11-19
US20200361970A1
Chemistry; metallurgy

Metal compounds and methods of fabricating semiconductor devices using the same

#8 | 2020-08-27
US20200273747A1
Electricity

Method of manufacturing semiconductor device

#9 | 2020-07-23
US20200231610A1
Chemistry; metallurgy

TIN COMPOUND, TIN PRECURSOR COMPOUND FOR FORMING A TIN-CONTAINING LAYER, AND METHODS OF FORMING A THIN LAYER USING THE SAME

#10 | 2020-07-02
US20200207790A1
Chemistry; metallurgy

Aluminum compound and method for manufacturing semiconductor device using the same

#11 | 2019-10-03
US20190304770A1
Electricity

Method of fabricating semiconductor device

#12 | 2018-12-20
US20180363131A1
Chemistry; metallurgy

Tungsten precursor and method of forming Tungsten containing layer using the same

#13 | 2010-05-27
US20100127319A1
Electricity

Semiconductor devices including a dielectric layer

InventorID:

2377873 ⎘