Waltham, Massachusetts
United States
28
2011-08-11
27
2013-03-05
These are the the leading inventors for applications assigned to MEARS TECHNOLOGIES, INC.:
MEARS TECHNOLOGIES, INC. based in Waltham, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Multiple-wavelength opto-electronic device including a superlattice
#2 | 2010-10-28ELECTRONIC DEVICE INCLUDING AN ELECTRICALLY POLLED SUPERLATTICE AND RELATED METHODS
#3 | 2008-10-23 ✅ Patent 7,812,339 granted on 2010-10-12Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures
#4 | 2008-08-21 ✅ Patent 7,863,066 granted on 2011-01-04Method for making a multiple-wavelength opto-electronic device including a superlattice
#5 | 2008-08-21 ✅ Patent 7,880,161 granted on 2011-02-01Multiple-wavelength opto-electronic device including a superlattice
#6 | 2008-07-31 ✅ Patent 7,781,827 granted on 2010-08-24Semiconductor device with a vertical MOSFET including a superlattice and related methods
#7 | 2008-07-31 ✅ Patent 7,928,425 granted on 2011-04-19Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods
#8 | 2007-10-11 ✅ Patent 7,625,767 granted on 2009-12-01Methods of making spintronic devices with constrained spintronic dopant
#9 | 2007-08-23 ✅ Patent 7,700,447 granted on 2010-04-20Method for making a semiconductor device comprising a lattice matching layer
#10 | 2007-08-23 ✅ Patent 7,718,996 granted on 2010-05-18Semiconductor device comprising a lattice matching layer
#11 | 2007-07-12 ✅ Patent 7,517,702 granted on 2009-04-14Method for making an electronic device including a poled superlattice having a net electrical dipole moment
#12 | 2007-01-18 ✅ Patent 7,535,041 granted on 2009-05-19Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
#13 | 2007-01-18 ✅ Patent 7,598,515 granted on 2009-10-06Semiconductor device including a strained superlattice and overlying stress layer and related methods
#14 | 2007-01-18 ✅ Patent 7,531,829 granted on 2009-05-12Semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance
#15 | 2007-01-18 ✅ Patent 7,531,828 granted on 2009-05-12Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
#16 | 2007-01-11 ✅ Patent 7,612,366 granted on 2009-11-03Semiconductor device including a strained superlattice layer above a stress layer
#17 | 2006-12-28 ✅ Patent 7,491,587 granted on 2009-02-17Method for making a semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer
#18 | 2006-11-30 ✅ Patent 7,514,328 granted on 2009-04-07Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween
#19 | 2006-11-02 ✅ Patent 7,659,539 granted on 2010-02-09Semiconductor device including a floating gate memory cell with a superlattice channel
#20 | 2006-10-12 ✅ Patent 7,586,165 granted on 2009-09-08Microelectromechanical systems (MEMS) device including a superlattice
#21 | 2006-09-14 ✅ Patent 7,531,850 granted on 2009-05-12Semiconductor device including a memory cell with a negative differential resistance (NDR) device
#22 | 2006-01-26 ✅ Patent 7,446,002 granted on 2008-11-04Method for making a semiconductor device comprising a superlattice dielectric interface layer
#23 | 2006-01-12 ✅ Patent 7,433,729 granted on 2008-10-07Infrared biometric finger sensor including infrared antennas and associated methods
#24 | 2005-08-25 ✅ Patent 7,303,948 granted on 2007-12-04Semiconductor device including MOSFET having band-engineered superlattice
#25 | 2005-08-11 ✅ Patent 7,435,988 granted on 2008-10-14Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
#26 | 2005-04-28 ✅ Patent 7,436,026 granted on 2008-10-14Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions
#27 | 2005-02-10 ✅ Patent 7,432,524 granted on 2008-10-07Integrated circuit comprising an active optical device having an energy band engineered superlattice
#28 | 2005-02-10 ✅ Patent 7,446,334 granted on 2008-11-04Electronic device comprising active optical devices with an energy band engineered superlattice
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