Assignee profile:

Zing Semiconductor Corporation

City:

Shanghai

Country:

China

Published Applications:

59

Last publication date:

2026-03-26

Patent Grants:

41

Last grant date:

2025-11-18

Top Inventors for applications by Zing Semiconductor Corporation

These are the the leading inventors for applications assigned to Zing Semiconductor Corporation:

Recent patent applications by Zing Semiconductor Corporation

Zing Semiconductor Corporation based in Shanghai, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2026-03-26
US20260085450A1
Chemistry; metallurgy

CRYSTAL GROWING APPARATUS AND RF-SOI SUBSTRATE

#2 | 2025-04-03
US20250109521A1
Chemistry; metallurgy

METHOD AND APPARATUS FOR DIAMETER MEASUREMENT OF CZOCHRALSKI MONOCRYSTALLINE SILICON, AND DEVICE FOR GROWING CZOCHRALSKI MONOCRYSTALLINE SILICON

#3 | 2024-11-21
US20240387241A1
Electricity

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CHARGE CAPTURE LAYER AND MANUFACTURE THEREOF

#4 | 2024-11-21
US20240387171A1
Electricity

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CHARGE CAPTURE LAYER AND MANUFACTURE THEREOF

#5 | 2024-07-04
US20240218564A1
Chemistry; metallurgy

CRYSTAL GROWING METHOD, APPARATUS AND RF-SOI SUBSTRATE

#6 | 2024-07-04
US20240218556A1
Chemistry; metallurgy

METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLING CRYSTAL GROWTH

#7 | 2024-06-13
US20240191393A1
Chemistry; metallurgy

EPITAXY SUSCEPTOR, EPITAXY GROWTH APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

#8 | 2024-06-06 ✅ Patent 12,474,277 granted on 2025-11-18
US20240183797A1
Physics

METHOD FOR DETERMINING TYPES OF DEFECTS IN MONOCRYSTALLINE SILICON WAFER

#9 | 2024-03-21
US20240096645A1
Electricity

SOI WAFER

#10 | 2024-02-29 ✅ Patent 12,046,520 granted on 2024-07-23
US20240071839A1
Electricity

Method for detecting temperature of thermal chamber

#11 | 2023-10-12
US20230326809A1
Electricity

STANDARD WAFERS, METHOD OF MAKING THE SAME AND CALIBRATION METHOD

#12 | 2023-10-12
US20230323561A1
Chemistry; metallurgy

METHOD OF GROWING A SINGLE-CRYSTAL SILICON

#13 | 2023-06-08
US20230178366A1
Electricity

SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF

#14 | 2023-05-04
US20230137599A1
Electricity

SURFACE TREATMENT OF SOI WAFER

#15 | 2023-05-04
US20230134308A1
Electricity

SOI WAFER AND METHOD OF FINAL PROCESSING THE SAME

#16 | 2023-05-04
US20230133916A1
Electricity

PROCESS OF SURFACE TREATMENT OF SOI WAFER

#17 | 2023-05-04
US20230133092A1
Electricity

SOI STRUCTURED SEMICONDUCTOR SILICON WAFER AND METHOD OF MAKING THE SAME

#18 | 2023-02-09 ✅ Patent 12,334,403 granted on 2025-06-17
US20230040616A1
Electricity

MEASURING METHOD OF RESISTIVITY OF A WAFER

#19 | 2023-02-09 ✅ Patent 12,400,917 granted on 2025-08-26
US20230037569A1
Electricity

METHOD FOR VERIFICATION OF CONDUCTIVITY TYPE OF SILICON WAFER

#20 | 2022-10-20 ✅ Patent 12,398,485 granted on 2025-08-26
US20220333269A1
Chemistry; metallurgy

METHOD OF DETECTING CRYSTALLOGRAPHIC DEFECTS AND METHOD OF GROWING AN INGOT

#21 | 2022-09-15 ✅ Patent 12,092,588 granted on 2024-09-17
US20220291145A1
Physics

Method for characterizing defects in silicon crystal

#22 | 2022-07-07 ✅ Patent 12,000,060 granted on 2024-06-04
US20220213614A1
Chemistry; metallurgy

Semiconductor crystal growth method and device

#23 | 2022-06-30 ✅ Patent 12,107,016 granted on 2024-10-01
US20220208617A1
Electricity

Detection method of metal impurity in wafer

#24 | 2022-06-30
US20220205136A1
Chemistry; metallurgy

CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS

#25 | 2022-06-09 ✅ Patent 11,393,712 granted on 2022-07-19
US20220181200A1
Electricity

Silicon on insulator structure and method of making the same

#26 | 2022-06-09 ✅ Patent 11,443,941 granted on 2022-09-13
US20220181150A1
Electricity

Silicon on insulator structure and method of making the same

#27 | 2022-05-26 ✅ Patent 11,662,326 granted on 2023-05-30
US20220163470A1
Physics

Method for calculating liquid-solid interface morphology during growth of ingot

#28 | 2022-05-05 ✅ Patent 11,401,626 granted on 2022-08-02
US20220136132A1
Chemistry; metallurgy

Seeding method for crystal growth

#29 | 2022-05-05 ✅ Patent 11,624,123 granted on 2023-04-11
US20220136131A1
Chemistry; metallurgy

Method and apparatus of monocrystal growth

#30 | 2022-04-14 ✅ Patent 11,923,254 granted on 2024-03-05
US20220115274A1
Electricity

Method for detecting temperature of thermal chamber

#31 | 2022-03-31
US20220097199A1
Performing operations; transporting

METHOD AND DEVICE OF CHEMICAL MECHANICAL POLISHING

#32 | 2022-01-27
US20220028732A1
Electricity

PROCESS FOR PREPARING EPITAXY WAFER AND EPITAXY WAFER THEREFROM

#33 | 2022-01-13 ✅ Patent 11,427,925 granted on 2022-08-30
US20220010454A1
Chemistry; metallurgy

Apparatus and method for ingot growth

#34 | 2022-01-13 ✅ Patent 11,471,997 granted on 2022-10-18
US20220009051A1
Performing operations; transporting

Polishing pad, polishing apparatus and a method for polishing silicon wafer

#35 | 2022-01-06 ✅ Patent 11,352,713 granted on 2022-06-07
US20220002898A1
Chemistry; metallurgy

Heat shield structure for single crystal production furnace and single crystal production furnace

#36 | 2021-10-28 ✅ Patent 11,562,917 granted on 2023-01-24
US20210335637A1
Electricity

Wafer positioning method and a semiconductor manufacturing apparatus

#37 | 2021-01-14 ✅ Patent 11,479,874 granted on 2022-10-25
US20210010154A1
Chemistry; metallurgy

Semiconductor crystal growth apparatus

#38 | 2018-04-26 ✅ Patent 10,553,496 granted on 2020-02-04
US20180114728A1
Electricity

Complementary metal-oxide-semiconductor field-effect transistor and method thereof

#39 | 2018-02-22 ✅ Patent 9,972,637 granted on 2018-05-15
US20180053777A1
Electricity

Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same

#40 | 2017-09-07 ✅ Patent 9,773,891 granted on 2017-09-26
US20170256632A1
Electricity

FinFET and fabrication method thereof

#41 | 2017-09-07 ✅ Patent 10,014,210 granted on 2018-07-03
US20170256616A1
Electricity

SOI substrate and manufacturing method thereof

#42 | 2017-09-07 ✅ Patent 9,793,285 granted on 2017-10-17
US20170256557A1
Electricity

Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same

#43 | 2017-09-07 ✅ Patent 9,972,543 granted on 2018-05-15
US20170256461A1
Electricity

Complementary nanowire semiconductor device and fabrication method thereof

#44 | 2017-09-07 ✅ Patent 9,779,999 granted on 2017-10-03
US20170256460A1
Electricity

Complementary nanowire semiconductor device and fabrication method thereof

#45 | 2017-09-07 ✅ Patent 10,170,356 granted on 2019-01-01
US20170256438A1
Electricity

SOI substrate and manufacturing method thereof

#46 | 2017-09-07 ✅ Patent 9,793,138 granted on 2017-10-17
US20170256420A1
Electricity

Thermal processing method for wafer

#47 | 2017-09-07 ✅ Patent 9,779,964 granted on 2017-10-03
US20170256419A1
Electricity

Thermal processing method for wafer

#48 | 2017-09-07 ✅ Patent 9,834,861 granted on 2017-12-05
US20170253993A1
Chemistry; metallurgy

Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

#49 | 2017-09-07 ✅ Patent 10,100,431 granted on 2018-10-16
US20170253991A1
Chemistry; metallurgy

Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

#50 | 2017-08-01 ✅ Patent 9,721,846 granted on 2017-08-01
US15157421
Electricity

Hybrid integration fabrication of nanowire gate-all-around GE PFET and polygonal III-V PFET CMOS device

#51 | 2017-06-22 ✅ Patent 9,837,517 granted on 2017-12-05
US20170179269A1
Electricity

Method for making III-V nanowire quantum well transistor

#52 | 2017-05-11 ✅ Patent 9,634,151 granted on 2017-04-25
US20170133510A1
Electricity

High voltage junctionless field effect device and its method of fabrication

#53 | 2017-05-11 ✅ Patent 9,818,844 granted on 2017-11-14
US20170133488A1
Electricity

High-voltage junctionless device with drift region and the method for making the same

#54 | 2017-05-09 ✅ Patent 9,647,067 granted on 2017-05-09
US15270966
Electricity

FinFET and fabrication method thereof

#55 | 2017-04-27 ✅ Patent 9,647,107 granted on 2017-05-09
US20170117407A1
Electricity

Fabrication method for forming vertical transistor on hemispherical or polygonal patterned semiconductor substrate

#56 | 2017-04-27 ✅ Patent 9,634,133 granted on 2017-04-25
US20170117400A1
Electricity

Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure

#57 | 2017-04-27 ✅ Patent 9,773,670 granted on 2017-09-26
US20170117138A1
Electricity

Method of preparation of III-V compound layer on large area Si insulating substrate

#58 | 2017-04-20 ✅ Patent 9,640,615 granted on 2017-05-02
US20170110540A1
Electricity

Method for making III-V nanowire quantum well transistor

#59 | 2017-04-20 ✅ Patent 9,875,943 granted on 2018-01-23
US20170110373A1
Electricity

Complementary metal-oxide-semiconductor field-effect transistor and method thereof

Also check out Zing Semiconductor Corporation's (Shanghai, China) applicant profile with 49 patent applications submitted.

AssigneeID:

316711 ⎘