Inventor profile of:

Xing Wei

City:

Shanghai

Country:

China

Published Applications:

45

Last publication date:

2026-03-26

Top Assignees for applications by Xing Wei

The entities that hold a legal rights for patent applications filed by inventor Wei Xing:

Recent patent applications by Wei Xing

Xing Wei from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-03-26
US20260085450A1
Chemistry; metallurgy

CRYSTAL GROWING APPARATUS AND RF-SOI SUBSTRATE

#2 | 2026-01-29
US20260028515A1
Chemistry; metallurgy

SEALANT COMPOSITION

#3 | 2026-01-01
US20260005037A1
Electricity

METHOD FOR REINFORCING BONDED WAFER

#4 | 2026-01-01
US20260005014A1
Electricity

METHOD FOR OXIDATION OF TOP SILICON LAYER IN BONDED WAFER

#5 | 2025-12-25
US20250389003A1
Chemistry; metallurgy

STEEL STRIP AND MANUFACTURING METHOD THEREFOR

#6 | 2024-11-21
US20240387241A1
Electricity

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CHARGE CAPTURE LAYER AND MANUFACTURE THEREOF

#7 | 2024-11-21
US20240387171A1
Electricity

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CHARGE CAPTURE LAYER AND MANUFACTURE THEREOF

#8 | 2024-07-04
US20240218564A1
Chemistry; metallurgy

CRYSTAL GROWING METHOD, APPARATUS AND RF-SOI SUBSTRATE

#9 | 2024-06-06
US20240183797A1
Physics

METHOD FOR DETERMINING TYPES OF DEFECTS IN MONOCRYSTALLINE SILICON WAFER

#10 | 2024-05-09
US20240153764A1
Electricity

METHOD FOR PREPARING SILICON-ON-INSULATOR

#11 | 2024-05-02
US20240141547A1
Chemistry; metallurgy

PREPARATION METHOD OF P-TYPE HIGH-RESISTANCE AND ULTRA-HIGH-RESISTANCE CZOCHRALSKI MONOCRYSTALLINE SILICON SUBSTRATE

#12 | 2024-03-21
US20240096645A1
Electricity

SOI WAFER

#13 | 2023-10-12
US20230323561A1
Chemistry; metallurgy

METHOD OF GROWING A SINGLE-CRYSTAL SILICON

#14 | 2023-06-08
US20230178366A1
Electricity

SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF

#15 | 2023-05-04
US20230138958A1
Electricity

METHOD FOR TREATING A WAFER SURFACE

#16 | 2023-05-04
US20230137992A1
Electricity

METHOD FOR IMPROVING THE SURFACE ROUGHNESS OF A SILICON-ON-INSULATOR WAFER

#17 | 2023-05-04
US20230137599A1
Electricity

SURFACE TREATMENT OF SOI WAFER

#18 | 2023-05-04
US20230134308A1
Electricity

SOI WAFER AND METHOD OF FINAL PROCESSING THE SAME

#19 | 2023-05-04
US20230133916A1
Electricity

PROCESS OF SURFACE TREATMENT OF SOI WAFER

#20 | 2023-05-04
US20230133092A1
Electricity

SOI STRUCTURED SEMICONDUCTOR SILICON WAFER AND METHOD OF MAKING THE SAME

#21 | 2023-02-09
US20230040616A1
Electricity

MEASURING METHOD OF RESISTIVITY OF A WAFER

#22 | 2023-02-09
US20230037569A1
Electricity

METHOD FOR VERIFICATION OF CONDUCTIVITY TYPE OF SILICON WAFER

#23 | 2023-01-26
US20230022605A1
Chemistry; metallurgy

SEALANT COMPOSITION

#24 | 2022-10-20
US20220333269A1
Chemistry; metallurgy

METHOD OF DETECTING CRYSTALLOGRAPHIC DEFECTS AND METHOD OF GROWING AN INGOT

#25 | 2022-09-15
US20220291145A1
Physics

Method for characterizing defects in silicon crystal

#26 | 2022-06-09
US20220181200A1
Electricity

Silicon on insulator structure and method of making the same

#27 | 2022-06-09
US20220181150A1
Electricity

Silicon on insulator structure and method of making the same

#28 | 2022-01-06
US20220005766A1
Electricity

COMPOSITE HEAT INSULATION STRUCTURE FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE

#29 | 2022-01-06
US20220002903A1
Chemistry; metallurgy

HEAT SHIELD DEVICE FOR SINGLE CRYSTAL PRODUCTION FURNACE, CONTROL METHOD THEREOF AND SINGLE CRYSTAL PRODUCTION FURNACE

#30 | 2022-01-06
US20220002902A1
Chemistry; metallurgy

HEAT SHIELD DEVICE FOR INSULATING HEAT AND SMELTING FURNACE

#31 | 2022-01-06
US20220002901A1
Chemistry; metallurgy

HEAT SHIELD DEVICE AND SMELTING FURNACE

#32 | 2022-01-06
US20220002900A1
Chemistry; metallurgy

THIN-FILM HEAT INSULATION SHEET FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE

#33 | 2022-01-06
US20220002899A1
Chemistry; metallurgy

HEAT SHIELD FOR MONOCRYSTALLINE SILICON GROWTH FURNACE AND MONOCRYSTALLINE SILICON GROWTH FURNACE

#34 | 2022-01-06
US20220002898A1
Chemistry; metallurgy

Heat shield structure for single crystal production furnace and single crystal production furnace

#35 | 2020-05-28
US20200168501A1
Electricity

METHOD FOR PLANARIZING WAFER SURFACE

#36 | 2020-05-28
US20200168452A1
Electricity

METHOD FOR PLANARIZING WAFER SURFACE

#37 | 2020-03-26
US20200098703A1
Electricity

Bonding method for semiconductor substrate, and bonded semiconductor substrate

#38 | 2018-11-15
US20180330964A1
Electricity

Annealing method for improving bonding strength

#39 | 2018-07-12
US20180197741A1
Electricity

Method for preparing substrate with insulated buried layer

#40 | 2018-07-05
US20180190539A1
Electricity

Method for preparing substrate with carrier trapping center

#41 | 2018-06-28
US20180182662A1
Electricity

METHOD FOR PREPARING SUBSTRATE WITH CARRIER TRAPPING CENTER

#42 | 2018-06-28
US20180178257A1
Performing operations; transporting

Method for cleaning bonding interface before bonding

#43 | 2015-11-12
US20150325468A1
Electricity

METHOD FOR PREPARING MATERIAL ON INSULATOR BASED ON ENHANCED ADSORPTION

#44 | 2013-10-17
US20130273714A1
Electricity

Method for preparing semiconductor substrate with insulating buried layer gettering process

#45 | 2012-05-10
US20120112283A1
Electricity

ESD protection devices for SOI integrated circuit and manufacturing method thereof

InventorID:

487407 ⎘