Hod Hasharon
Israel
24
2026-03-26
17
2025-09-09
These are the the leading inventors for applications assigned to Weebit Nano Ltd.:
Weebit Nano Ltd. based in Hod Hasharon, IL has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Programming of the High Resistive State of a Resistive Memory Element
#2 | 2026-03-05Stack Structure For Retention of High and Low Resistive States of an Oxide-Based Random-Access Memory
#3 | 2026-01-29SYSTEM AND METHOD FOR REDUCTION OF TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) OF UNSELECTED TRANSISTORS OF A RESISTIVE RANDOM-ACCESS MEMORY (RERAM) DEVICE
#4 | 2025-12-04SYSTEM AND METHODS FOR SMART BINNING AND HEALING PROGRAMMING OF RESISTIVE RANDOM-ACCESS MEMORIES (RERAMS)
#5 | 2025-10-16Resistive Random-Access Memory With Reduced Disturb Current in a Shared Source Line Bit Cell Architecture
#6 | 2025-06-19 ✅ Patent 12,414,485 granted on 2025-09-09METHOD FOR MANUFACTURING AN OXRAM-TYPE RESISTIVE MEMORY CELL AND ASSOCIATED OXRAM-TYPE MEMORY CELL
#7 | 2025-06-19LOW-POWER AND FAST WAKE-UP BAND-GAP VOLTAGE REFERENCE CIRCUIT
#8 | 2024-10-03 ✅ Patent 12,347,487 granted on 2025-07-01CURRENT AND VOLTAGE LIMIT CIRCUITRY FOR RESISTIVE RANDOM ACCESS MEMORY PROGRAMMING
#9 | 2023-06-29 ✅ Patent 12,119,059 granted on 2024-10-15Write method for differential resistive memories
#10 | 2023-06-15 ✅ Patent 12,406,724 granted on 2025-09-02SELECTOR RESISTIVE MEMORY, EQUIPPED WITH A CAPACITOR WRITING, AND ASSOCIATED WRITING METHOD
#11 | 2023-06-01 ✅ Patent 12,033,698 granted on 2024-07-09Method for resetting an array of resistive memory cells
#12 | 2023-05-25 ✅ Patent 12,170,110 granted on 2024-12-17Silicon-on-insulator (SOI) circuitry for low-voltage memory bit-line and word-line decoders
#13 | 2023-03-30 ✅ Patent 12,131,777 granted on 2024-10-29Resistive random-access memory (ReRAM) cell optimized for reset and set currents
#14 | 2023-01-12 ✅ Patent 12,165,706 granted on 2024-12-10Method for resetting an array of resistive memory cells
#15 | 2022-12-15 ✅ Patent 12,349,609 granted on 2025-07-01LOW FORMING VOLTAGE OXRAM MEMORY CELL, AND ASSOCIATED METHOD OF MANUFACTURE
#16 | 2022-12-08 ✅ Patent 12,087,360 granted on 2024-09-10Method for programming an array of resistive memory cells
#17 | 2022-10-20 ✅ Patent 12,349,605 granted on 2025-07-01METHOD FOR MANUFACTURING AN OXRAM TYPE RESISTIVE MEMORY CELL
#18 | 2022-10-20 ✅ Patent 12,224,007 granted on 2025-02-11Method for determining a manufacturing parameter of a resistive random access memory cell
#19 | 2022-09-08 ✅ Patent 12,068,028 granted on 2024-08-20Circuitry for parallel set and reset of resistive random-access memory (ReRAM) cells
#20 | 2022-07-28 ✅ Patent 12,040,017 granted on 2024-07-16Current and voltage limit circuitry for resistive random access memory programming
#21 | 2022-06-16 ✅ Patent 12,052,876 granted on 2024-07-30Memory comprising a matrix of resistive memory cells, and associated method of interfacing
#22 | 2022-04-21CONFIGURATION AND METHOD OF OPERATION OF A ONE-TRANSISTOR TWO-RESISTORS (1T2R) RESISTIVE MEMORY (RERAM) CELL AND AN ARRAY THEREOF
#23 | 2022-01-20 ✅ Patent 11,659,720 granted on 2023-05-23Silicon over insulator two-transistor one-resistor in-series resistive memory cell
#24 | 2022-01-20 ✅ Patent 11,538,524 granted on 2022-12-27Silicon over insulator two-transistor two-resistor in-series resistive memory cell
Also check out Weebit Nano Ltd.'s (Hod Hasharon, Israel) applicant profile with 26 patent applications submitted.
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