Inventor profile of:

Gabriel MOLAS

City:

Grenoble

Country:

France

Published Applications:

34

Last publication date:

2026-05-07

Recent patent applications by MOLAS Gabriel

Gabriel MOLAS from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-07
US20260128068A1
Physics

MEMORY DEVICE COMPRISING AN ARRAY OF MEMORY CELLS

#2 | 2025-06-19
US20250204285A1
Electricity

METHOD FOR MANUFACTURING AN OXRAM-TYPE RESISTIVE MEMORY CELL AND ASSOCIATED OXRAM-TYPE MEMORY CELL

#3 | 2025-05-15
US20250157536A1
Physics

ESTIMATING THE INITIAL STATE OF A RESISTIVE ELEMENT

#4 | 2023-11-23
US20230377647A1
Physics

Method for calculating a MAC operation in a 1S1R-type RRAM memory

#5 | 2023-06-15
US20230186987A1
Physics

SELECTOR RESISTIVE MEMORY, EQUIPPED WITH A CAPACITOR WRITING, AND ASSOCIATED WRITING METHOD

#6 | 2023-06-01
US20230170023A1
Physics

Method for resetting an array of resistive memory cells

#7 | 2023-01-12
US20230008586A1
Physics

Method for resetting an array of resistive memory cells

#8 | 2022-12-15
US20220399496A1
Electricity

LOW FORMING VOLTAGE OXRAM MEMORY CELL, AND ASSOCIATED METHOD OF MANUFACTURE

#9 | 2022-12-08
US20220392528A1
Physics

Method for programming an array of resistive memory cells

#10 | 2022-10-20
US20220336744A1
Electricity

METHOD FOR MANUFACTURING AN OXRAM TYPE RESISTIVE MEMORY CELL

#11 | 2022-10-20
US20220336017A1
Physics

Method for determining a manufacturing parameter of a resistive random access memory cell

#12 | 2022-07-21
US20220231225A1
Electricity

MEMORY SELECTOR

#13 | 2022-06-16
US20220190037A1
Electricity

Memory comprising a matrix of resistive memory cells, and associated method of interfacing

#14 | 2021-06-03
US20210166758A1
Physics

Energy recovery in filamentary resistive memories

#15 | 2020-12-31
US20200411592A1
Electricity

Three dimensional resistive random access memory and method enabling such a memory to be obtained

#16 | 2020-01-02
US20200005867A1
Physics

Method for programming a resistive random access memory

#17 | 2019-11-07
US20190341105A1
Physics

Method for using electrochemical components for storage of energy and information and associated electronic circuit

#18 | 2018-11-15
US20180330786A1
Physics

Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory

#19 | 2018-11-15
US20180330783A1
Physics

Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory

#20 | 2018-11-08
US20180323205A1
Electricity

Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device

#21 | 2018-07-12
US20180197603A1
Physics

Method for determining a memory window of a resistive random access memory

#22 | 2018-02-08
US20180040816A1
Electricity

Resistive random access memory device

#23 | 2016-04-21
US20160111637A1
Electricity

Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer

#24 | 2015-12-17
US20150364680A1
Electricity

RESISTIVE RANDOM ACCESS MEMORY DEVICE

#25 | 2015-12-17
US20150364679A1
Electricity

Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal

#26 | 2015-10-01
US20150280120A1
Electricity

Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal

#27 | 2015-06-11
US20150162081A1
Physics

Method for determining electrical parameters used to programme a resistive random access memory

#28 | 2015-03-19
US20150078065A1
Physics

Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes

#29 | 2014-05-29
US20140145141A1
Electricity

Electronic memory device having an electrode made of a soluble material

#30 | 2012-06-07
US20120139025A1
Electricity

Dual gate electronic memory cell and device with dual gate electronic memory cells

#31 | 2012-03-01
US20120052598A1
Electricity

Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines

#32 | 2011-12-08
US20110300699A1
Electricity

Fabrication of a memory with two self-aligned independent gates

#33 | 2011-07-14
US20110169067A1
Electricity

Structure and production process of a microelectronic 3D memory device of flash NAND type

#34 | 2009-08-13
US20090203205A1
Electricity

Method for producing a floating gate with an alternation of lines of first and second materials

InventorID:

775689