Grenoble
France
34
2026-05-07
The entities that hold a legal rights for patent applications filed by inventor MOLAS Gabriel:
Gabriel MOLAS from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:
MEMORY DEVICE COMPRISING AN ARRAY OF MEMORY CELLS
#2 | 2025-06-19METHOD FOR MANUFACTURING AN OXRAM-TYPE RESISTIVE MEMORY CELL AND ASSOCIATED OXRAM-TYPE MEMORY CELL
#3 | 2025-05-15ESTIMATING THE INITIAL STATE OF A RESISTIVE ELEMENT
#4 | 2023-11-23Method for calculating a MAC operation in a 1S1R-type RRAM memory
#5 | 2023-06-15SELECTOR RESISTIVE MEMORY, EQUIPPED WITH A CAPACITOR WRITING, AND ASSOCIATED WRITING METHOD
#6 | 2023-06-01Method for resetting an array of resistive memory cells
#7 | 2023-01-12Method for resetting an array of resistive memory cells
#8 | 2022-12-15LOW FORMING VOLTAGE OXRAM MEMORY CELL, AND ASSOCIATED METHOD OF MANUFACTURE
#9 | 2022-12-08Method for programming an array of resistive memory cells
#10 | 2022-10-20METHOD FOR MANUFACTURING AN OXRAM TYPE RESISTIVE MEMORY CELL
#11 | 2022-10-20Method for determining a manufacturing parameter of a resistive random access memory cell
#12 | 2022-07-21MEMORY SELECTOR
#13 | 2022-06-16Memory comprising a matrix of resistive memory cells, and associated method of interfacing
#14 | 2021-06-03Energy recovery in filamentary resistive memories
#15 | 2020-12-31Three dimensional resistive random access memory and method enabling such a memory to be obtained
#16 | 2020-01-02Method for programming a resistive random access memory
#17 | 2019-11-07Method for using electrochemical components for storage of energy and information and associated electronic circuit
#18 | 2018-11-15Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory
#19 | 2018-11-15Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory
#20 | 2018-11-08Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device
#21 | 2018-07-12Method for determining a memory window of a resistive random access memory
#22 | 2018-02-08Resistive random access memory device
#23 | 2016-04-21Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer
#24 | 2015-12-17RESISTIVE RANDOM ACCESS MEMORY DEVICE
#25 | 2015-12-17Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal
#26 | 2015-10-01Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal
#27 | 2015-06-11Method for determining electrical parameters used to programme a resistive random access memory
#28 | 2015-03-19Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
#29 | 2014-05-29Electronic memory device having an electrode made of a soluble material
#30 | 2012-06-07Dual gate electronic memory cell and device with dual gate electronic memory cells
#31 | 2012-03-01Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines
#32 | 2011-12-08Fabrication of a memory with two self-aligned independent gates
#33 | 2011-07-14Structure and production process of a microelectronic 3D memory device of flash NAND type
#34 | 2009-08-13Method for producing a floating gate with an alternation of lines of first and second materials
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