Cheonan-si
South Korea
21
2024-03-07
17
2025-04-08
These are the the leading inventors for applications assigned to SENIC Inc.:
SENIC Inc. based in Cheonan-si, KR has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, AND WAFER AND EPITAXIAL WAFER MANUFACTURED THEREBY
#2 | 2023-06-29SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR
#3 | 2022-12-22 ✅ Patent 12,270,122 granted on 2025-04-08Silicon carbide wafer and semiconductor device
#4 | 2022-10-27SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR PREPARING SILICON CARBIDE WAFER
#5 | 2022-10-06 ✅ Patent 12,136,653 granted on 2024-11-05Silicon carbide wafer and semiconductor device applied the same
#6 | 2022-07-14SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY
#7 | 2022-07-14 ✅ Patent 11,969,917 granted on 2024-04-30Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer
#8 | 2022-05-19 ✅ Patent 11,862,685 granted on 2024-01-02Wafer and method of manufacturing wafer
#9 | 2022-03-24 ✅ Patent 11,646,209 granted on 2023-05-09Method of cleaning wafer and wafer with reduced impurities
#10 | 2022-03-24 ✅ Patent 12,320,033 granted on 2025-06-03Silicon carbide wafer and method of preparing the same
#11 | 2022-03-03 ✅ Patent 11,339,497 granted on 2022-05-24Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
#12 | 2021-12-16 ✅ Patent 11,566,344 granted on 2023-01-31Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer
#13 | 2021-12-02 ✅ Patent 11,939,698 granted on 2024-03-26Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby
#14 | 2021-12-02 ✅ Patent 11,795,572 granted on 2023-10-24Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal
#15 | 2021-10-14 ✅ Patent 11,591,711 granted on 2023-02-28Method and system for producing silicon carbide ingot
#16 | 2021-04-29 ✅ Patent 11,856,678 granted on 2023-12-26Method of measuring a graphite article, apparatus for a measurement, and ingot growing system
#17 | 2021-04-29 ✅ Patent 11,474,012 granted on 2022-10-18Method for preparing silicon carbide wafer and silicon carbide wafer
#18 | 2021-04-29 ✅ Patent 11,708,644 granted on 2023-07-25Method for preparing SiC ingot, method for preparing SiC wafer and the SiC wafer prepared therefrom
#19 | 2021-04-29 ✅ Patent 11,359,306 granted on 2022-06-14Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more
#20 | 2021-04-22 ✅ Patent 11,466,383 granted on 2022-10-11Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer
#21 | 2021-04-22 ✅ Patent 11,447,889 granted on 2022-09-20Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer
Also check out SENIC INC.'s (Cheonan-si, South Korea) applicant profile with 18 patent applications submitted.
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